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semiconductor thin film
相关语句
  半导体薄膜
     Nanoheteroepitaxial New Technology for High Mismatched Semiconductor Thin Film Materials
     高失配半导体薄膜材料的纳米异质外延新技术
短句来源
     Study on the Real-time Measurement Technology of Semiconductor Thin Film Properties
     半导体薄膜特性实时检测技术的研究
短句来源
     According to the temperature parameters of growth system for semiconductor thin film,a method to calibrate the thin film growth temperature by ECR-PEMOCVD based on double thermocouple is introduced.
     通过简单叙述Ⅲ族GaN基氮化物薄膜,以及了解半导体薄膜生长系统的温度变化情况重要性,提出了基于双热电偶校准薄膜生长装置ECR-PEMOCVD温度的方法。
短句来源
     The sensitivity of a gas sensing semiconductor thin film may be expressed by the relation between the density of charge carrier in the film and the density of oxygen adsorbed on the film surface.
     气敏半导体薄膜内的载流子浓度与薄膜表面吸附氧密度的关系,可以反映气敏薄膜的敏感性。
短句来源
     The gas sensing characteristics of a new type of semiconductor thin film SnO 2/SnO 2∶Pt double layer thin film were introduced The film was fabricated by powder sputtering using surface-layer doping method The influence of the thickness of the conductance layer on gas sensing properties was investigated The problems related to gas sensing mechanism were discussed
     介绍了一种新型结构 CO气敏的半导体薄膜材料——粉末溅射方法制备的表面层掺杂 Sn O2 /Sn O2 ∶ Pt双层膜的气敏特性。 分析了双层膜中的导电层厚度对气敏特性的影响 ,并对气敏机理的有关问题进行了讨论
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  “semiconductor thin film”译为未确定词的双语例句
     Electroluminescent Excitation Mechanism of Erbium-activated Zinc Sulfide Semiconductor Thin Film Devices
     Electroluminescent Excitation Mechanism of Erbium-activated Zinc Sulfide Semiconductor Thin Film Devices
短句来源
     STUDY ON THE CATHODIC DEPOSITION OF CdTe SEMICONDUCTOR THIN FILM FROM AQUEOUS ELECTROLYTES
     水溶液中阴极电沉积半导体 CdTe 薄膜性能的研究
短句来源
     Study of the Kinetics of Nanocrystalline Semiconductor Thin Film Electrode Processes by Intensity Modulated Photocurrent Spectroscopy
     强度调制光电流谱研究纳晶薄膜电极过程
短句来源
     OPTICAL TRANSIENT RESPONSE OF METALLIC ULTRAFINE PARTICLES EMBEDDED IN SEMICONDUCTOR THIN FILM
     金属超微粒子─半导体薄膜的光学瞬态响应
短句来源
     Analysis of Operation Characteristics of Organic Semiconductor Thin Film Static Induction Transistor
     有机半导体超薄膜静电感应三极管动作特性
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  相似匹配句对
     THIN
     薄
短句来源
     Diamond Semiconductor Thin-Film and Its Applications
     金刚石半导体薄膜及其应用
短句来源
     Semiconductor Thin Film For Photocatalytic Degradation Of Phenol
     半导体薄膜光催化降解苯酚废水
短句来源
     Growth for Thin Film Of Organic Semiconductor Pentacene
     有机半导体材料并五苯薄膜的生长
短句来源
     Measuring Circuit For Semiconductor Organic Thin Films
     半导体有机膜测试电路
短句来源
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  semiconductor thin film
Humidity sensitivity of La3+-doped BaTiO3 semiconductor thin film deposited by pulsed excimer laser ablation
      
Photoelectrochemical Characteristics Of α-Fe2O3 Nanocrystalline Semiconductor Thin Film
      
Interaction of light with a semiconductor thin film, taking into account concentration gain of the dipole moment of the excitoni
      
The semiconductor thin film industry hada marketof US$ 80 billion in 1993 and is expanding at an estimatedrate of I4Voper year.
      


Metallic colloidal particles- semiconductor thin films show special electrical, optical and photoelectric properties. The formulas for light absorption coefficient and scattering coefficient of small colloidal particles dispersed in semiconductor thin film are given in this paper. The colloidal particles may be spheroids, prolate spheroids or oblate spheroids. As an example, the effects of sizes and shapes of Ag colloidal particcles in Ag-Cs2O semiconductor thin films on light absorption and...

Metallic colloidal particles- semiconductor thin films show special electrical, optical and photoelectric properties. The formulas for light absorption coefficient and scattering coefficient of small colloidal particles dispersed in semiconductor thin film are given in this paper. The colloidal particles may be spheroids, prolate spheroids or oblate spheroids. As an example, the effects of sizes and shapes of Ag colloidal particcles in Ag-Cs2O semiconductor thin films on light absorption and scattering are discussed. The calculated curves for relative absorption coefficient and scattering coefficient vs. wavelength A are also presented.

金属微粒-半导体薄膜具有特殊的电学、光学及光电特性。本文讨论了埋藏于半导体基体中金属小胶粒光吸收和光散射公式。这些胶粉可以是球形,也可以是长球或扁球形。本文以银胶粒-氧化铯半导体为例,讨论了胶粒大小、椭球的偏心率对相对光吸收系数和光散射系数的影响,并给出这些系数随波长改变的曲线。

CdSe semiconductor thin-film electrodes have been prepared by means of electrodeposition. They are capable of achieving 5.9% solar energy conversion efficiency in PEC performance after being annealed at 450℃ in air. Surface photovoltage (SPV) has been used to study their photoelectrochemical properties. SPV spectra of the CdSe thin-films with and without annealing show that surface recombination of minority carriers is significantly reduced after annealing. The minority carriers...

CdSe semiconductor thin-film electrodes have been prepared by means of electrodeposition. They are capable of achieving 5.9% solar energy conversion efficiency in PEC performance after being annealed at 450℃ in air. Surface photovoltage (SPV) has been used to study their photoelectrochemical properties. SPV spectra of the CdSe thin-films with and without annealing show that surface recombination of minority carriers is significantly reduced after annealing. The minority carriers diffusion length L_P has been determined by extrapolating the plots of reciprocal surface photovoltage as a function of the absorption length to zero ΔV_(Ph)~(-1). It is found that Lp=0.42μm.

用电沉积法得到的CdSe薄膜,在450℃热处理后,其光电转换效率达到5.9%.表面光伏谱测定结果表明,电沉积CdSe薄膜经热处理后,其光伏效应显著提高。推算出其少子扩散长度Lp等于0.42μm.

We derived a formula of the multiphoto photoelectron emission from the ultrafine metal particles-semicondnctor thin films. We also fabricated the ultrafine Ag particles-Cs_2O semiconductor thin films, and measured the properties of the multiphoto photoelectron emission from these thin films with Q-switched Nd: YAG Laser (λ=1.06μm, the width of a pusle is 10 ns). It is found that these thin films [possess larger α_n which is the absorption factor contribute to the multiphoto...

We derived a formula of the multiphoto photoelectron emission from the ultrafine metal particles-semicondnctor thin films. We also fabricated the ultrafine Ag particles-Cs_2O semiconductor thin films, and measured the properties of the multiphoto photoelectron emission from these thin films with Q-switched Nd: YAG Laser (λ=1.06μm, the width of a pusle is 10 ns). It is found that these thin films [possess larger α_n which is the absorption factor contribute to the multiphoto photoemission, and the larger quatum yield η_n.

我们推导了金属超微粒子-半导休薄膜的多光子光电发射公式。制备了■Ag超微粒子-Cs_2O半导体薄膜,用调Q的Nd:YAG激光源(λ=1.06urn,脉冲宽度为10ns)测量了这种薄膜的多光子光电发射特性。发现它具有对光电发射贡献较大的光吸收系数几和较高的量干效率η_n。

 
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