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oxygen exposure
相关语句
  氧暴露
     Effect of 0.5 MPa hyperbaric oxygen exposure on GAD content in cultured neurons
     0.5MPa高压氧暴露对培养的神经元中谷氨酸脱羧酶含量的影响
短句来源
     Effects of 60% oxygen exposure on the expression of vascular endothelial growth factor and its receptor in lungs of preterm rats
     60%氧暴露对早产大鼠肺血管内皮生长因子及其受体表达的影响
短句来源
     Effects of hyperbaric oxygen exposure on the expression of macrophage inflammatory protein-2mRNA in mice lung tissue
     高压氧暴露对小鼠肺组织巨噬细胞炎症蛋白-2mRNA表达的影响
     Changes of hypoxic tolerance status in mice induced by hyperbaric oxygen exposure
     高压氧暴露诱导小鼠低氧耐受状态变化
短句来源
     Conclusion It is indicated that hyperbaric oxygen exposure could improve hypoxic tolerance condition in mice.
     结论高压氧暴露可改善小鼠低氧耐受状态。
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  氧环境
     EFFECTS ON POLYMER AND COMPOSITES PROPERTIES BY ATOMIC OXYGEN EXPOSURE
     原子氧环境对聚合物及其复合材料性能的影响
短句来源
     Mass change and erosion mechanism of the polyimide film during atomic oxygen exposure
     原子氧环境中聚酰亚胺的质量变化和侵蚀机制
短句来源
  “oxygen exposure”译为未确定词的双语例句
     ISS AND AES STUDIES OF CHANGES INDUCED ON Ni_3Ti(0001) BY OXYGEN EXPOSURE
     ISS AND AES STUDIES OF CHANGES INDUCED ON Ni_3Ti(0001) BY OXYGEN EXPOSURE
短句来源
     Results The free radical contents of the lung were increased along with the increasing oxygen exposure doses. When compared with the control values, the increases were 24 72%( P <0 01) at 400 UPTD, 32 24%( P <0 01) at 650 UPTD, 47 78%( P <0 01) at 850 UPTD and 30 36%( P <0 01) at 1 100 UPTD respectively.
     结果 肺自由基含量随氧剂量加大而升高,与对照值比,400 UPTD时升高24.72% (P< 0.01),650 UPTD时升高32.24% (P< 0.01),850 UPTD时升高47.78% (P< 0.01),1 100 UPTD时升高30.36% (P< 0.01)。
短句来源
     Conclusion Prolonged 85% oxygen exposure result in abnormal expressions of Notch2 and Notch4 ,which is likely to lead to the pathogenesis of hyperoxic lung injure in premature rats.
     结论在吸氧体积分数为85%的氧气长期暴露,Notch2、Notch4异常表达,可能是早产大鼠肺损伤的发生机制之一。
短句来源
     Results The median survival time of HBO group(108 min) was longer than that of NBA group(57 min),hyperbaric oxygen exposure increased the survival time of mice treated to hypoxia(log-rank test,P < 0.01).
     结果HBO组中位生存时间(108 m in)较NBA组(57 m in)明显延长,HBO与NBA两条生存曲线的差异有统计学意义(Log-rank检验,P<0.01)。
短句来源
     The experimental results indicated that: Mixture of UO2 and U was formed at 5 L and 20 L oxygen exposure, while at quantity of oxygen exposure more than 70 L unique UO2 was observed.
     实验结果表明:在 5 L 和 20 L 的氧气暴露量下表面形成 UO2 和金属 U 的混合物,在大于 70 L 情况下只形成 UO2。
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  oxygen exposure
Pregrowth substrate treatment using diluted hydrofluoric acid (HF) and minimized oxygen exposure before the initial growth significantly reduces the interfacial SiO2 thickness, while maintaining good morphology.
      
The thickness of the growing oxide was closely proportional to the oxygen exposure (i.e., the pressure-time product) until a limiting value of 6.3 ± 0.2? was reached, regardless of pressure.
      
Yet thesame quadratic correlation between tantalum oxide loss and dissolved oxygen concentration as observed for diatomic oxygen exposure is found to be preserved under conditions of oxygen atom impingement.
      
Grain boundaries are observed to be pinned and recrystallization suppressed after oxygen exposure.
      
The friction force decreased also with oxygen exposure although not as dramatically.
      
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The variation of GaAs and O surface oncentrations on GaAs (111) surface duringthe oxygen exposure process has been investigated by detecting the As 2p, Ga2p, Ga 3d andO 1s photoelectrons excited by Mg K_α and A1 K_α X-ray sources at large emission angleresulting in the increase of surface detecting sensitivity.It has been discovered that the ox-ygen species are first bonded to surface Ga atoms at low exposure,and the As atoms are alsoinvolved in the substrate-adsorbate bond formation at higher oxygen...

The variation of GaAs and O surface oncentrations on GaAs (111) surface duringthe oxygen exposure process has been investigated by detecting the As 2p, Ga2p, Ga 3d andO 1s photoelectrons excited by Mg K_α and A1 K_α X-ray sources at large emission angleresulting in the increase of surface detecting sensitivity.It has been discovered that the ox-ygen species are first bonded to surface Ga atoms at low exposure,and the As atoms are alsoinvolved in the substrate-adsorbate bond formation at higher oxygen exposure.The intens-ity of As 2p signal is reduced by the uptake of oxygen on the surface, but there is no evide-nce showing the creation of Gadeficiency which was suggested by Ranke and Jacobi previ-ously.After annealing the sample below 400℃, the As-O bonds disappear, while the Ga-Obonds can only be eliminated at elevated annealing temperature (550℃). The fact that thesurface shows a sharper (2×2) LEED pattern and that the initial sticking coefficient ofoxygen on the surface reduces after the sample has been treated by oxygen adsorption andannealing at 550℃ indicates that the surface becomes well-ordered by such treatment.It canbe deduced from the increase of surface As/Ga ratio that the Ga islands which might existon the ion bombarded and annealed surface have been partly eliminated by the oxygen expo-sure and annealing treatment.

用探测在MgK_α和 AlK_α X光源激发下掠角发射的As 2p、GaZP、Ca3d和Ols光电子的办法,提高了XPS表面分析的灵敏度,从而研究了 GaAs(111)面在吸附氧过程中表面 Ga、As和O的变化情形.发现吸附一开始时氧同表面Ga原子成键,随后氧再同As原子成键.吸附引起As2p强度的减弱,而没有看到有Ga减少的现象.在400℃以下加热退火,可以使As-O键消失,但Ga-O 键依然存在,后者只有在550℃退火才会去除.经过氧吸附并550℃退火后,(2×2)LEED图样比吸附氧以前更为清晰,氧在表面的初始粘附系数减小,说明表面有序程度提高.从氧吸附并退火后表面As/Ga比的增大,推测是由于这一处理部分地消除了原先表面所存在的Ga岛.

CLS,AES and XPS measurements have been used to study oxygen adsorption ontothe ion bombarded and annealed InP(111)surface and the initial stages of oxidation.At low oxygen exposure,it has been observed that oxygen is adsorbed on sites above theIn island,oxide of In can be observed at exposure of 10~5 LO_2,but oxide of P begins toappear at high exposure of 10~2 LO_2.The mechanism of adsorption and oxidation hasbeen discussed briefly.

用CLS、AES和XPS研究了氧在IBA法制备的InP(111)面上的吸附及早期氧化.低暴氧量时氧已被表面In原子吸附,到10~5LO_2时可观测到铟的氧化物,而磷的氧化物则在10~5LO_2的高暴氧量下出现.初步探讨了吸附和氧化机理.

Thermal desorption spectra for oxygen chemisorbed on electrolytic silver have been obtained using a temperature programmed reaction (TPRS)technique with mass analysis in an ultrahigh vacuum (UHV) system. More than twenty times cycles of pretreatments were carried out at a partial pressure of oxygen equal to 1×10~(-3) torr and at 650℃ while desorption measurements were obtained in a total pressure enviroment 2-5×10~(-9) torr. For oxygen exposure 90L three distinct species appear in the desorption spectra....

Thermal desorption spectra for oxygen chemisorbed on electrolytic silver have been obtained using a temperature programmed reaction (TPRS)technique with mass analysis in an ultrahigh vacuum (UHV) system. More than twenty times cycles of pretreatments were carried out at a partial pressure of oxygen equal to 1×10~(-3) torr and at 650℃ while desorption measurements were obtained in a total pressure enviroment 2-5×10~(-9) torr. For oxygen exposure 90L three distinct species appear in the desorption spectra. Isotope-mixing, CO titration and kinetic behaviour studies lead to the following assignments: weakly molecularly chemisorbed oxygen (E_d=92 kJ mol~(-1), v=4.1×10~(11_S-1)) , strongly chemisorbed atomic oxygen (E_d=134 kJ mol~(-1), v=4.7×10~(13_S-1) and oxygen diffuses to the bulk of silver (see Fig.2) . Detailed information about the variation of states of adsobed oxygen with exposure, between 5L and 10~8L, have been obtained and for 0=0.2~0.6 a "break" of atomic oxygen desorption is also found, in agreement with other studies. The desorption of molecularly adsorbed oxygen exhibited complex kinetics due to lateral interactions between the adsorbed molecularly oxygen and atomic oxygen. It is suggested that the adsorption of molecularly oxygen due to the presence of surface impurities, such as sodium, carbon, sulfur etc. The behavior of the desorption of bulk oxygen has been studied by isothermal desorption technique. The result shows that the higher temperature of oxygen adsorption favors the diffusion of oxygen.

运用超高真空程序升温反应(TPRS)技术研究了氧在电解银上的化学吸附。在宽广的压力范围内(1—10~(-8)torr)考察了几种吸附氧种的变化规律,并观察到在覆盖度为0.2—0.6时表面吸附物种的突变。用同位素交换和CO滴定实验证实了在电解银表面存在三种氧吸附态:(1) 弱的未解离的分子态吸附(E_d=92KJ/mol,v=4×10~(11_S-1));(2) 强的解离的原子态吸附(E_d=134kJ/mol,v=4.7×10~(13_S-1));(3)氧在银体相中扩散。进一步的实验发现,分子态吸附氧与表面杂质的存在有关。用等温脱附技术研究了氧在银中的扩散,得到了扩散量随温度增加的定性规律。

 
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