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polycrystalline silicon
相关语句
  多晶硅
     Efficiency Calculation for Polycrystalline Silicon MIS (Al/SiO_2/P—Si) Solar Cells
     多晶硅MIS(Al/SiO_2/p-Si)太阳电池效率计算
短句来源
     Stability of Polycrystalline Silicon/CoSi_2/Si Structures
     多晶硅/CoSi_2/Si结构热稳定性研究
短句来源
     THE RESEARCH ON POLYCRYSTALLINE SILICON THIN FILM DEPOSITED ON SiO 2 AND Si 3N 4 BY RTCVD
     在SiO_2和Si_(3)N_4膜上用RTCVD法沉积多晶硅薄膜的研究
短句来源
     Influence of the a-Si∶H Films in Structure on the Properties of Polycrystalline Silicon Films
     a-Si∶H薄膜结构对多晶硅薄膜性能的影响
短句来源
     The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl_4/H_2 mixture
     用SiCl_4/H_2气源沉积多晶硅薄膜光照稳定性的研究
短句来源
更多       
  “polycrystalline silicon”译为未确定词的双语例句
     The effect of grain size on the short-circuit current and AM_1 efficiency of polycrystalline silicon MIS (Al/SiO_2/P-Si) solar ceils have been calculated, where the Rothwarf's model of recombination loss in crystal boudaries,the Green's formula for minoity carries MIS tunnel diodes current and the Soclof's efficient minority carrier diffuse length were used.
     本文计算了晶粒尺寸对多晶 Si MIS(Al/SiO_2/p—si)太阳电池短路电流和 AM_1效率的影响。 其中利用了 Rothwarf 的晶界复合模型,Green 的少子 MIS 隧道二极管电流公式和 Soclof 的等效扩散长度.
短句来源
     In this paper, the authors report a concentrated Sunlight (2—5 Suns) Solar cell with Concentration grid (CG) and back-Surface-field (BSF) Structure, which is made of cast polycrystalline Silicon wafer(50×50mm~2), Under standard AM1.5 conditions, the total-area photo-electicc onversion efficiency Surpasses 10.2 percent, and the active area efficiency reaches 11.46 percent.
     本文报道了用50×50毫米~2浇铸多晶Si制成具有密栅、背场结构的低倍(2~5倍)聚光太阳电池,在AM1.5标准光强下,全面积转换效率达到10.2%,有效面积转换效率达到11.46%。
短句来源
     The polycrystalline silicon sheets with columnar grain structure are made by controlling the solidification processing of the silicon sheets. The sheets are 20mm×20mm×1.2mm, and the surface are smooth. The average grain size is 0. 5mm and the biggest is 1.5mm.
     通过对硅片凝固过程的控制,制得20mm×20mm×1,2mm具有柱状晶组织的多晶硅片,表面平整,晶粒平均尺寸0.5mm,最大尺寸1.5mm。
短句来源
     It is resulted from the NiSi 2 which formed by MIC has the characteristics of crystal lattice match with c Si and can act as a seed for the following growth of polycrystalline silicon by the ELA.
     这个结果源于用MIC方法形成的且与c Si晶格匹配的NiSi2在ELA中起到晶核的作用。
短句来源
     Textured etching and diffusion gettering processes were studiedfor 100mm x 100mm polycrystalline silicon solar cells.
     对100mm×100mm p型多晶硅片,采用单晶的绒面腐蚀工艺以及二次扩散吸杂工艺后,电池的电性能普遍有所提高.
短句来源
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  相似匹配句对
     DOPED POLYCRYSTALLINE SILICON AND ITS OXIDATION
     掺杂多晶硅及其氧化
短句来源
     Research on Technology for Polycrystalline Silicon Film
     多晶硅薄膜的工艺研究
短句来源
     Nutrition of silicon
     硅营养
短句来源
     Silicon Photonics
     硅光子学
短句来源
     polycrystalline area;
     多晶区;
短句来源
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  polycrystalline silicon
Determination of oxygen and carbon impurities in polycrystalline silicon by IR spectrometry
      
Microwave characterization of undoped polycrystalline silicon
      
An experiment is conducted to evaluate a contactless nondestructive microwave technique for the characterization of polycrystalline silicon (poly-Si).
      
Structural study of polycrystalline silicon carbide obtained by sublimation performed via X-ray luminescence and X-ray diffraction analysis.
      
Nucleation of nanocracks on amorphous layers in polycrystalline silicon
      
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The polycrystalline silicon films (PSFs) have been produced by chemical vapor deposition (CVD) from silane gas. The microstructure of the films are investigated by Transmission electron microscope, Scanning electron microscope and Infrarad spectrometer. We have found that the microstructure is strongly dependent upon the deposition conditions. Experimental results indecate that super quality of PSFs which suits the Si-gate of MOS integrated circuit can be obtained with "lower temperature nucleation" at...

The polycrystalline silicon films (PSFs) have been produced by chemical vapor deposition (CVD) from silane gas. The microstructure of the films are investigated by Transmission electron microscope, Scanning electron microscope and Infrarad spectrometer. We have found that the microstructure is strongly dependent upon the deposition conditions. Experimental results indecate that super quality of PSFs which suits the Si-gate of MOS integrated circuit can be obtained with "lower temperature nucleation" at the initial step under the whole deposition process. For nucleation temperature of 650℃~700℃ and the appropriate conditions, the films are smooth and uniform with a small grain size of ca. 300~500A. The mechanism of "lower temperature nucleation" and polycrystal film growth model are also discussed. In addition, the optical, electrical and dielectrical properties of PSFs have been measured. Because of the effect of the presence of grain boundaries, the differences of the characteristics between poly-Si and single-crystal-Si are calculated and analysed. Here some useful theoretical data are given for the design of devices.

多晶硅薄膜的制备采用硅烷(SiH_4)热分解化学汽相淀积法。利用透射电子显微镜、扫描电子显微镜和红外光谱仪等手段对膜的微结构进行了研究。我们发观膜的结构特性强烈地依赖于淀积条件,实验结果指出:假如在整个淀积过程的最初阶段采用“低温成核”,就不难获得适合于硅栅MOS集成电路的优质多晶硅膜。当低温成核温度为650℃~700℃,并控制一定的淀积条件,所制得的膜是光亮和均匀的,其晶粒大小约为300~500埃。文中对“低温成核”的机理及多晶薄膜的生长模型也进行了讨论。此外,对多晶膜的光学、电学和介电等性质进行了测量,对多晶硅由于晶粒间界的存在而引起的一系利与单晶硅不同的性质进行了计算和分析,从而为器件设计提供某些有用的理论数据。

The polycrystalline silicon films (PSFs) have been produced by chemical vapor deposition (CVD) from silane gas. The microstructure of the films are investigated by Transmission electron microscope, Scanning electron microscope and Infrarad spectrometer. We have found that the microstructure is strongly dependent upon the deposition conditions. Experimental results indecate that super quality of PSFs which suits the Si-gate of MOS integrated circuit can be obtained with “lower temperature nucleation” at...

The polycrystalline silicon films (PSFs) have been produced by chemical vapor deposition (CVD) from silane gas. The microstructure of the films are investigated by Transmission electron microscope, Scanning electron microscope and Infrarad spectrometer. We have found that the microstructure is strongly dependent upon the deposition conditions. Experimental results indecate that super quality of PSFs which suits the Si-gate of MOS integrated circuit can be obtained with “lower temperature nucleation” at the initial step under the whole deposition process. For nucleation temperature of 650℃~700℃ and the appropriate conditions, the films are smooth and uniform with a small grain size of ca. 300~500A. The mechanism of “lower temperature nucleation” and polycrystal film growth model are also discussed. In addition, the optical, electrical and dielectrical properties of PSFs have been measured. Because of the effect of the presence of grain boundaries, the differences of the characteristics between poly-Si and single-crystal-Si are calculated and analysed. Here some useful theoretical data are given for the design of devices.

多晶硅薄膜的制备采用硅烷(SiH_4)热分解化学汽相淀积法。利用透射电子显微镜、扫描电子显微镜和红外光谱仪等手段对膜的微结构进行了研究。我们发观膜的结构特性强烈地依赖于淀积条件,实验结果指出:假如在整个淀积过程的最初阶段采用“低温成核”,就不难获得适合于硅栅MOS集成电路的优质多晶硅膜。当低温成核温度为650℃~700℃,并控制一定的淀积条件,所制得的膜是光亮和均匀的,其晶粒大小约为300~500埃。文中对“低温成核”的机理及多晶薄膜的生长模型也进行了讨论。此外,对多晶膜的光学、电学和介电等性质进行了测量,对多晶硅由于晶粒间界的存在而引起的一系利与单晶硅不同的性质进行了计算和分析,从而为器件设计提供某些有用的理论数据。

The charge coupled device is a new type of photoelectric sensor.The application of doped polycrystalline silicon film in the charge coupled sensor is analysed. Through the doping techniques as proposed in this article, the potential barriers between the transfer electrodes can be removed to keep the gate oxides from being exposed, thus improving the transfer efficiency and stability of the device. Furthermore, the photoelectric conversion efficiency of CCD can also be increased by applying the polycrystalline...

The charge coupled device is a new type of photoelectric sensor.The application of doped polycrystalline silicon film in the charge coupled sensor is analysed. Through the doping techniques as proposed in this article, the potential barriers between the transfer electrodes can be removed to keep the gate oxides from being exposed, thus improving the transfer efficiency and stability of the device. Furthermore, the photoelectric conversion efficiency of CCD can also be increased by applying the polycrystalline silicon transparent electrodes.The quality of the polycrystalline silicon film depends on the temperature at which deposition takes place, the density of silane, as well as the degree of contamination of water, oxygen and other impurities. The resistance of the polycrystalline silicon film is dependent on the temperature at which doping occurs, the length of time during which doping occurs, and the thickness and quality of the film. The penetration of the impurity into gate oxides is a very serious problem as it can cause unstability of the work of CCD at room temperature. It is therefore necessary to strictly control the doping conditions or to use the SiO2/Si3N4 sandwich structure.Self-doping of polycrystalline silicon film is a new film-growing technology which contributes to improving the device's source and drain characteristics and stability. By using PC13 as the self-doper, SiH4 as the source and hydrogen as the carrier gas for the silane to deposit for 4 minutes (without the self-doper) and another 11 minutes (after the addition of the doper), a sheet resistance of 15-30Ω/ is obtained which can meet the requirements of device design. Experiments show that PCl3 used as doper for self-doping is just as effective as PH3 or B2H6 and possesses some other desirable features at that.

本文讨论了电荷耦合器件(CCD)的多晶薄膜的淀积,研究了多晶硅薄膜的掺杂,报导了以三氯化磷为淀积多晶硅薄膜的掺杂剂实验结果。文中还分析了多晶硅对CCD器件性能的影响。

 
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