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growth interruption
相关语句
  生长停顿
     Effects of Growth Interruption on the Properties of InGaN/GaN MQWs Grown by MOCVD
     生长停顿改善MOCVD生长InGaN/GaN多量子阱的特性
短句来源
     THE INFLUENCE OF GROWTH INTERRUPTION ON QUANTUM DOT LASER
     生长停顿对量子点激光器的影响
短句来源
     InGaN/GaN MQWs structures were grown by MOCVD. The effects of the growth interruption time on the optical and structural properties of InGaN/GaN MQWs were investigated.
     利用金属有机物化学气相淀积(MOCVD)生长了InGaN/GaN多量子阱(MQWs)结构,研究了生长停顿对InGaN/GaN MQWs特性的影响。
短句来源
     The growth interruption can improve the interface quality,increase the intensity of photoluminescence(PL) and electroluminescence(EL);
     结果表明,采用生长停顿,可以改善MQWs界面质量,提高MQWs的光致发光(PL)与电致发光(EL)强度;
短句来源
     Growth interruption was introduced during the growth of GaAs capping layer of self organized quantum dots. The comparison of two QD lasers with and without growth interruption in their active regions shows that growth interruption leads to lower threshold current, higher characteristic temperature, and weaker temperature dependence of lasing energy.
     在 In As自组织量子点的 Ga As覆盖层中引入生长停顿 ,将这种量子点结构作激光器的有源区 ,与不引入生长停顿的量子点激光器进行对比后发现 :生长停顿可以降低激光器的阈值电流 ,提高其特征温度 ,改善激光波长的温度稳定性 . 简单的分析表明 ,量子点中的能带填充效应影响了激光波长的温度特性 .
短句来源
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  生长中断
     Strain buffer layer and growth interruption were applied in the QW growth by mentalorganic chemical vapor deposition (MOCVD) to improve QW photoluminescence performance.
     金属有机物化学气相沉积(MOCVD)方法生长应变InGaAs/GaAs量子阱,应变缓冲层结合生长中断改善量子阱的PL谱特性.
短句来源
  中断生长
     3. It was found that that the HC1 growth interruption can change the polarity of the GaN film from N-polar into Ga-polar for the first time.
     3、首次采用HCl中断生长方法实现了外延生长GaN薄膜极性的改变,从N极性转变为Ga极性;
短句来源
     It is revealed that a finite-thick buffer layer can improve the surface flatness of Si substrates, and the employment of lower growth rate or growth interruption procedure can improve tke crystal quality of epilayers.
     其振荡特性表明,外延一定厚度的缓冲层可以改善表面的平整性,较慢的生长速率或中断生长一段时间有利于外延膜晶体质量的提高。
短句来源
     Strained InGaAs/GaAs quantum Wells(QWs) were grown by lowpressure metalorganic chemical vapor deposition(MOVCD). Growth interruption and strain buffer layer(SBL) were introduced to improve the photoluminescence(PL) performance of the InGaAs/GaAs QW.
     用低压MOCVD生长应变InGaAs/GaAs量子阱,采用中断生长、应变缓冲层(SBL)、改变生长速度和调节Ⅴ/Ⅲ等方法改善InGaAs/GaAs量子阱的光致发光(PL)质量。
短句来源
  “growth interruption”译为未确定词的双语例句
     The effects of the thickness of GaAs space layer, the growth interruption time and the amount of InAs deposition on the emission wavelength of columnal islands were presented.
     具体分析了GaAs间隔层厚度 ,生长停顿时间以及InAs淀积量对发光峰波长的影响 .
短句来源
     but if the interruption time was too long,the well thickness and the average in composition of MQWs decreased,and the EL intensity also decreased due to poor interface quality and impurity derived by growth interruption.
     但生长停顿的时间过长,阱的厚度会变薄,界面质量变差,不仅In组分变低,富In的发光中心减少,而且会引入杂质,致使EL强度下降。
短句来源
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  growth interruption
This suggests a correlation between defect nucleation and either shutter movement or growth interruption.
      
We report surface anisotropy features observed by reflectance difference spectroscopy (RDS) during exposure of the GaAs (001) surface to trimethylantimony (TMSb) and during subsequent growth interruption.
      
We investigated the change in the structural and optical properties of InAs/InP quantum structures during growth interruption (GI) for various times and under various atmospheres in metalorganic chemical vapor deposition.
      
Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots
      
On vicinal substrates, we observe and quantify step bunching during growth interruption.
      
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RHEED intensity oscillations in the process of MBE growth of Ge and Si on Si (100) and Si (111) substrates were observed. It is revealed that a finite-thick buffer layer can improve the surface flatness of Si substrates, and the employment of lower growth rate or growth interruption procedure can improve tke crystal quality of epilayers. During the growth of Ge and Si on Si (100), a single atomic layer mode RHEED intensity oscillation was observed along either [100] or [110] azimuthal direction,...

RHEED intensity oscillations in the process of MBE growth of Ge and Si on Si (100) and Si (111) substrates were observed. It is revealed that a finite-thick buffer layer can improve the surface flatness of Si substrates, and the employment of lower growth rate or growth interruption procedure can improve tke crystal quality of epilayers. During the growth of Ge and Si on Si (100), a single atomic layer mode RHEED intensity oscillation was observed along either [100] or [110] azimuthal direction, which is due to the existance of double domain (2×1) + (1 ×2) reconstruction on the surface. During the growth of Ge on Si (111) substrates, RHEED intensity oscillation show a bilayer mode observed along [112] azimuth, but a non-uniform periodicity along [110] azimuth. The oscillations for continuosly growing Ge-on either Si (100) or Si (111) could exist up to an epilayer thickness of 6ML, which corresponds to the critical thickness of pseudomorphic growth of Ge on Si.

本文观察了在Si(100)和Si(111)衬底上分子束外延Si,Ge时的反射式高能电子衍射(RHEED)强度振荡现象。其振荡特性表明,外延一定厚度的缓冲层可以改善表面的平整性,较慢的生长速率或中断生长一段时间有利于外延膜晶体质量的提高。Si(100)上外延Si或Ge时,沿[100]和[110]方位观测到的振荡特性均为单原子模式,起因于表面存在双畴(2×1)再构;而Si(111)上外延Ge时,[112]方位观测到的振荡为双原子层模式,但在[110]方位观察到不均匀周期的强度振荡行为。两种衬底上保持RHEED强度振荡对应的Ge外延层最大厚度都为6个原子单层(6ML),刚好跟共度生长的临界厚度h_c值相合。

Abstract Transport properties and photoluminescence spectra have been studied in three types of GaAs/AlGaAs single quantum wells with very different growth condition and quality. For low mobility samples, it is found that interface roughness scattering to two dimensional electron gas is a dominant scattering mechanism. Our work also shows that reduction of the interface roughness can be achieved by either replacing conventional AlGaAs layers by(GaAs)./(AlAs)2 superlattices or employing growth interruption...

Abstract Transport properties and photoluminescence spectra have been studied in three types of GaAs/AlGaAs single quantum wells with very different growth condition and quality. For low mobility samples, it is found that interface roughness scattering to two dimensional electron gas is a dominant scattering mechanism. Our work also shows that reduction of the interface roughness can be achieved by either replacing conventional AlGaAs layers by(GaAs)./(AlAs)2 superlattices or employing growth interruption at the heterointerfaces.

对三种不同生长条件、不同质量的GaAs/AlGaAs单量子阱进行了输运性质和光致发光谱的研究.在低迁移率的样品中,界面粗糙度对二维电子气的散射起主导作用.我们的研究也表明了:采用(GaAs)4/(AlAs)2超晶格代替常规的AlGaAs层,或在异质结界面生长过程中的停顿,都能有效地减少界面粗糙度.

Abstract Al0.35Ga0.65As/GaAs Multiple Quantum Well (MoW) structures were grown by atmospheric metalorganic vapor phase epitaxy (MOVPE) using home-made sources TMGa and TMAl. The photoluminescence (PL) measurements were carried out at 11K to characterize the optical properties of the QW structures groWn at different growth rates and with varied growth interruption times. The narrowest PL full width at half maximum (FWHM) of 10A well is 12meV, indicating abrupt AIGaAs/GaAs interfaces. The results of PL measurements...

Abstract Al0.35Ga0.65As/GaAs Multiple Quantum Well (MoW) structures were grown by atmospheric metalorganic vapor phase epitaxy (MOVPE) using home-made sources TMGa and TMAl. The photoluminescence (PL) measurements were carried out at 11K to characterize the optical properties of the QW structures groWn at different growth rates and with varied growth interruption times. The narrowest PL full width at half maximum (FWHM) of 10A well is 12meV, indicating abrupt AIGaAs/GaAs interfaces. The results of PL measurements show that low growth rate and proper growth interruption time are helpful to obtain narrower FWHM.

用常压MOVPE系统,采用AsH3、国产TMGa和TMAI生长了AI0.35Ga0.65As/GaAs多量子阱结构.在11K下,宽度为10A的阱PL半峰竞最窄为12meV,表明量子阱结构具有陡峭的界面.光致发光(PL)测试结果显示,较低的生长速率和适当的生长中断时间有利于改善PL半峰宽.

 
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