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photonic
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  光子
    The photonic crystals have wide application in the optical communication, integrated optics and new photoelectric apparatus because of the existence of the photonic bandgap, for example, the reflector with high performance, photonic crystal waveguide, photonic microcavities, photonic crystal fiber, photonic crystal superprism etc.
    光子带隙的存在使得光子晶体在光通信、集成光学及新型光电功能器件等领域具有广泛的应用前景,如:高性能反射镜、光子晶体光波导器件、光子晶体微腔、光子晶体光纤、光子晶体超棱镜等。
短句来源
    The fabrication of the photonic crystal obtains wide attention because of this, so to obtain the structure and parameter which are fit to the occurrence of the photonic bandgap by the analysis and calculation in theory, which have great significance to guide the experimental fabrication.
    通过理论分析和计算得出产生光子带隙的结构和参数,这对光子晶体的制备具有重大的指导意义。
短句来源
    In the First chapter, the history of theory and applying of optical fiber, and the classification of photonic optical fiber, are reviewed simply. Several analyzing methods for different modes of optical fibers are outlined, too.
    本文第一章简要回顾了光纤理论和应用的发展历史,介绍了光子晶体光纤的分类,对不同光纤模型的数理推导方法也做了概要的介绍。
短句来源
    In Second chapter, the rough situation about researching work on photonic crystal optical fiber is introduced.
    第二章介绍了当前关于光子晶体光纤的理论研究的大致状况。
短句来源
    According to defining of photonic crystal, the photonic band gap should exist in material when refractive index changed periodic.
    按照光子晶体的定义,当材料的折射率为周期性变化的时候,材料中就应该存在光子带隙。
短句来源
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  “photonic”译为未确定词的双语例句
    Development of all-fiber ultrashort pulse photonic circuit
    全光纤超短脉冲光子回路的发展
短句来源
    A New Structure of Optical Buffer and 2×622Mb/s ATM Photonic Switching System
    新型光缓存器及2×622Mb/sATM光交换系统
短句来源
    The effect of disorder on transmission spectra of two-dimensional photonic crystals with transfer matrix method(TMM) was investigated.
    将转移矩阵法(Transfer Matrix Method)用于数值模拟无序情况下的二维光子晶体传输特性.
短句来源
    InGaAsP/InP Active Time division Multiplexing Photonic Switching Devices
    InGaAsP/InP 有源时分光子交换器件
短句来源
    Experiment study of exact detect of two dimensional optical fiber bundle arrays in the photonic switching systems
    光交换系统中二维光纤输入列阵的精密检测实验研究
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  photonic
Photonic crystal, a novel and artificial photonic material with periodic dielectric distribution, possesses photonic bandgap and can control the propagation states of photons.
      
Photonic crystal has been considered to be a promising candidate for the future integrated photonic devices.
      
The properties and the fabrication method of photonic crystal are expounded.
      
The progresses of the study of ultrafast photonic crystal optical switching are discussed in detail.
      
Enhanced nonlinear effects in photonic crystal fibers
      
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In this paper we point out that the hadronic production of J/Ψ particle shouldcontain the radiative decay of x_c which is produced in hadron collsions.Our resultsshow that :(1)The difference between the effective coupling constant of J/Ψ and stratonsand the effective coupling constant of Ψ′ and stratons is reasonably decreased.(2)The main results in previous work are preserved.(3)The fractions of J/Ψ′s producedvia the photonic decay of the X_c states are obtained at different s~(1/2) in the fourprocesses.Finally,we...

In this paper we point out that the hadronic production of J/Ψ particle shouldcontain the radiative decay of x_c which is produced in hadron collsions.Our resultsshow that :(1)The difference between the effective coupling constant of J/Ψ and stratonsand the effective coupling constant of Ψ′ and stratons is reasonably decreased.(2)The main results in previous work are preserved.(3)The fractions of J/Ψ′s producedvia the photonic decay of the X_c states are obtained at different s~(1/2) in the fourprocesses.Finally,we simply compare this model with the production via gluon.

本文考虑了x_c粒子的强产生及其辐射衰变,指出J/ψ粒子的强产生应包括这部分贡献.结果,合理地缩小了 J/ψ,粒子和ψ′粒子同层子的有效耦合常数之间的差距,保留了以前工作中的主要结果,得到了不同质心系总能量下四种过程通过 x_c 的产生及其辐射衰交产生 J/ψ粒子的微分截面在 J/ψ粒子产生总微分截面中所占的比例.最后,对本文所用模型和胶子聚合模型作了简单比较.

Optoelectronic integrated circuit (OEIC) in which both photonic and electronic devices are monolithically integrated on a single chip can exhibit various advantages in improving performance, functionality, reliability and less cost. Owing to their low threshold current and high speed modulation characteristics, MQW-lasers and BH-lasers are used in OEIC. A buried-heterostructure(BH) GaAlAs laser is grown on a groove SI-GaAs substrate for a monolithic realized The use of SI-substrate is to reduce parasitic...

Optoelectronic integrated circuit (OEIC) in which both photonic and electronic devices are monolithically integrated on a single chip can exhibit various advantages in improving performance, functionality, reliability and less cost. Owing to their low threshold current and high speed modulation characteristics, MQW-lasers and BH-lasers are used in OEIC. A buried-heterostructure(BH) GaAlAs laser is grown on a groove SI-GaAs substrate for a monolithic realized The use of SI-substrate is to reduce parasitic reactances and realize electronic isolatioa The fabrication process involves two-step LPE growth. First, an etched groove was formed along the (110)-direction on the (001) substrate. Secondly, four layers of n+- GaAs (8μm- thick, Te- doped to 1× 1019cm-3), N- Ga0.75 Al0.25 As (0.8μm- thick, Sn- doped to 2× 1017cm-8), GaAs (0.2μm- thick, undoped), P- Ga0.75 Al0.25 As (1μm-thick, Ge- doped to 2 × 1017 cm-3) were grown in the first step growth. Buried mesa stripes were etched down to n+- GaAs layer (stripe width 6-8μm) along (110) direction. In the second- step growth, two burying layers were grown by a undoped GaAlAs growth solution contacting with the surface of wafer only once. The first layer is high resistance layer. The second is N- Ga0.6 Al0.4 As (3×1016cm-3). The interface between the first and second layers is adgacent to the active layer. The high resistance layer confinec success-fully the current Au-Zn/Au was evaporated on whole wafer to form P-contact. A positive - acting photoresist (212) is coated in spinning and patterned. After etching the useless layer down ro n+- GaAs buffer layer, and using a lift-off technique, the n- con-tact is formed by evaporation of Au - GeNi, followed by alloying. The laser is mounted with junction up on a copper heat sink.The CW threshold current of the BH laser on a groove SI- substrate is 50mA at room temperature. A stable transverse mode operation and linear light/ current charac-teristics were achieved. In the recent, 20mA threshold current were realized.

目前,光发射机中的激光器有采用MOCVD和MBE方法生长的多量子阱激光器,用LPE法生长的BH激光器。我们根据现有的实验条件,为了制作单片集成的光发射机,在沟道SI-GaAs衬底上采用两次液相外延生长BH激光器,实现了表面平面化。在800℃一次外延生长四层。第一层n~+-GaAs缓冲层,第二层N-GaAlAs下限制层,第三层非掺杂构GaAs有源层,第四层为P-GaAlAs上限制层。采用适当的腐蚀条件刻蚀出有源区最窄的燕尾形隐埋条。在二次外延中,我们仅装一槽GaAlAs源液,在晶片上仅停留一次便生长出两个掩埋层,且层间界面与有源区自对准。上层为N-GaAlAs,载流子浓度为10~(16)cm~(-3),下层为高阻伴随生长层。由于高阻伴随层的存在对电流产生了有有效的侧向限制作用,因此避免了通常的SiO_2膜沉积等一系列工艺,提高了成品率,减化了工艺程序。利用n型掩埋层和隐埋条区P型上限制层之间铝组分及载流子类型、浓度的差异,虽然做一种宽接触电极,但由于隐埋条区上有良好的欧姆接触,而在掩埋层上为非良欧姆接触,所以起到了一定的电流外限制作用。n型电极是从n~+-GaAs层引出的。 这种沟道SI-GaAs衬底正装GaA...

目前,光发射机中的激光器有采用MOCVD和MBE方法生长的多量子阱激光器,用LPE法生长的BH激光器。我们根据现有的实验条件,为了制作单片集成的光发射机,在沟道SI-GaAs衬底上采用两次液相外延生长BH激光器,实现了表面平面化。在800℃一次外延生长四层。第一层n~+-GaAs缓冲层,第二层N-GaAlAs下限制层,第三层非掺杂构GaAs有源层,第四层为P-GaAlAs上限制层。采用适当的腐蚀条件刻蚀出有源区最窄的燕尾形隐埋条。在二次外延中,我们仅装一槽GaAlAs源液,在晶片上仅停留一次便生长出两个掩埋层,且层间界面与有源区自对准。上层为N-GaAlAs,载流子浓度为10~(16)cm~(-3),下层为高阻伴随生长层。由于高阻伴随层的存在对电流产生了有有效的侧向限制作用,因此避免了通常的SiO_2膜沉积等一系列工艺,提高了成品率,减化了工艺程序。利用n型掩埋层和隐埋条区P型上限制层之间铝组分及载流子类型、浓度的差异,虽然做一种宽接触电极,但由于隐埋条区上有良好的欧姆接触,而在掩埋层上为非良欧姆接触,所以起到了一定的电流外限制作用。n型电极是从n~+-GaAs层引出的。 这种沟道SI-GaAs衬底正装GaAlAs/GaAs BH激光器室温连续工作阈值电流为55mA,P-I曲线在100℃仍有良好的线性关系。如果我们将隐埋条做得更窄,进一步改善工艺可使这种适

A novel photonic switching device based on polarisation switching by optical injection in fibre lasers is investigated. An all-optical switching device with an extremely low threshold (0. 1 μW) has been demonstrated. The mechanism of operation, experimental realisation and device characteristics are persented.

本文阐述了采用光子注入法实现光纤激光器的偏振开关操作.这种新颖的全光开关器件具有极低的阈值(0.1μW).对操作机理、实验实现和器件特性.

 
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