助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   thyristor 在 无线电电子学 分类中 的翻译结果: 查询用时:0.195秒
图标索引 在分类学科中查询
所有学科
无线电电子学
电力工业
自动化技术
金属学及金属工艺
计算机硬件技术
电信技术
计算机软件及计算机应用
铁路运输
船舶工业
更多类别查询

图标索引 历史查询
 

thyristor
相关语句
  晶闸管
    CIRCUIT MODEL FOR THYRISTOR
    晶闸管电路模型
短句来源
    Development of 500A, 2000V High-Sensitivity Light-Triggered Thyristor
    高灵敏度500A,2000V光控晶闸管的研制
短句来源
    FABRICATION OF THYRISTOR BY ETCHING GROOVE AND DOPING WITH P -N TYPE DOPANTS IN ONE STEP
    腐蚀挖槽和P、N型杂质一步掺杂制造晶闸管
短句来源
    The Design of MOS-controlled Thyristor
    MOS控制晶闸管(MCT)的设计
短句来源
    A Simple Thyristor Control Circuit
    一种简单的晶闸管控制电路
短句来源
更多       
  可控硅
    A Simply Measurement Method of bidirection Thyristor Output Voltage Waveform Symmetry
    测试双向可控硅输出电压波形对称性的简便方法
短句来源
    Main Method to Improve Heat Emission Efficiency of High-power Thyristor
    提高大功率可控硅散热效果的主要途径
短句来源
    A thyristor trigger controlled by the singlechip based on the PLL
    基于锁相环的单片机控制可控硅整流触发器
短句来源
    Cause Analysis and Improving Scheme for Abnormal Damage of Thyristor Excitation Device
    可控硅励磁装置异常损坏原因分析及改进方案
短句来源
    The application of a new type thyristor trigger CF6B-2A in extruder
    新型可控硅触发器CF6B-2A在挤塑机中的应用
短句来源
更多       
  闸流晶体管
    The Theoretical Calculation of on-State Voltage of a Thyristor
    闸流晶体管的态电压理论计算(英文)
短句来源
  “thyristor”译为未确定词的双语例句
    1000A 2500V Reverse Blocking GTO Thyristor
    1000A 2500V逆阻型GTO
短句来源
    Frequency Analysis of Transient Current Controlling for GTO Thyristor Chopper
    瞬时值控制GTO斩波器的频率分析
短句来源
    Design and Manufacture of High Speed pnpn Thyristor for Laser Emitting Pulse
    发射激光脉冲用的高速pnpn闸流管的设计与制造
短句来源
    Discussion on the Parameter Design of 100A/1200V Static Induction Thyristor
    100A/1200V静电感应晶闸管参数设计的探讨
短句来源
    Principle and Technology of New Power Electronic Device IGCT (Integrated Gated Commutated Thyristor)
    新型功率器件(IGCT)的工作原理及其设计技术
短句来源
更多       
查询“thyristor”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  thyristor
The thyristor tablet consists of two cylindrical layers, anisotropic silicon (the semiconductor) and molybdenum (the substrate).
      
The stress distribution in a thyristor tablet due to thermal shrinkage is considered.
      
Determination of axisymmetric elastic constants in anisotropic silicon for a thyristor tablet
      
A thyristor controller for furnaces with silicon carbide heaters
      
Thyristor-based three-phase electronic voltage regulator
      
更多          


Based on the specific requirements of battery charging, a three-phase balanced eharg-ing circuit controlled with one thyristor is proposed. This circuit is free from the defects existing in general single-or three-phase thyristor charging circuit but has the abvantages of the both. It is capable of achievement of three-phase synchronous re-gulation throughout the whole range by a simple way. Thus, it is different from the traditional method. there is no need to adopt multi-thyristor in three-phase...

Based on the specific requirements of battery charging, a three-phase balanced eharg-ing circuit controlled with one thyristor is proposed. This circuit is free from the defects existing in general single-or three-phase thyristor charging circuit but has the abvantages of the both. It is capable of achievement of three-phase synchronous re-gulation throughout the whole range by a simple way. Thus, it is different from the traditional method. there is no need to adopt multi-thyristor in three-phase balanced network to balance and synchronize the regulated D.C. output voltage. The purpose of this paper is to present a new practical circuit which is not only simple, economie, but also able to be three-phase balanced in voltage regulation, thus providing a good design of charging equipment controlled with one thyristor.

本文根据蓄电池充电的特点,提出了一种仅仅使用一只普通的可控硅轮流控制三相的平衡式充电电路,它克服了一般单相和三相可控硅充电电路的缺点,而又吸取了后两种电路的优点。它以最简单的方法实现在整个范围内的三相处处同步调节,这就打破了在三相平衡电网中,要使三相达到平衡,必须用多只可控硅来同步调节,以实现输出直流电压调压的传统做法。这为可控硅充电设备的设计提出了一种既简单、又经济、且三相能平衡调节的可控硅实用新电路。

The relationship between the sensitivity and P-base parameters is obtained by approximate quantitative processing on a grooved directly light-triggered thyristor (LTT) model. It is shown that a design with high sensitive P-base can be realized by a certain reasonable trade-off in parameters, which has been verified by experiment. The computer-based results also show that the PL-NS curves at any rL must intersect at the same point for a certain NX. When Nsp>Nx, the minimum light triggering power (pL) will...

The relationship between the sensitivity and P-base parameters is obtained by approximate quantitative processing on a grooved directly light-triggered thyristor (LTT) model. It is shown that a design with high sensitive P-base can be realized by a certain reasonable trade-off in parameters, which has been verified by experiment. The computer-based results also show that the PL-NS curves at any rL must intersect at the same point for a certain NX. When Nsp>Nx, the minimum light triggering power (pL) will decrease with an increase in r1 while when Nsp

本文通过对挖槽形直接光触发晶闸管(LTT)模型进行近似定量处理,得出了光触发灵敏度与P基区诸参数之间的关系式,该式表明,合理协调各参数,可得到高灵敏度的P基区设计方案.由计算机计算的结果表明,任意r_1下的P_L~N_s曲线在某一N_x下均相交于一点,当N_sP>N_x时,最小光触发功率P_L随r_1的增大而减小,当N_(sp)

This paper point out that optimizing frofile of deep level recombination center in n-base should be N_t(j_2)>N_t(j_1) by analysing turn-off physical procedure for thyristor. As the results of measurement and analysis of DLTS and electrical parameter, that the boron-doped concentration, phasphorus-doped concentration and quantity of gold-doped all can change gold profile in n-base, and the various gold profile is consistent with various V_T~t_q compromise curse. So the optimizing gold concentration in n-base...

This paper point out that optimizing frofile of deep level recombination center in n-base should be N_t(j_2)>N_t(j_1) by analysing turn-off physical procedure for thyristor. As the results of measurement and analysis of DLTS and electrical parameter, that the boron-doped concentration, phasphorus-doped concentration and quantity of gold-doped all can change gold profile in n-base, and the various gold profile is consistent with various V_T~t_q compromise curse. So the optimizing gold concentration in n-base for fast switching SCR should have optimizing V_T~t_q compromise curve. It depend on optimizing combination of gold, boron and phosphorus diffusion.

本文通过对晶闸管关断物理过程的分析得到:n基区深中心的最佳剖面分布应是N_t(j_2)>N_t(j_1)。经过实验,根据DLTS和电特性参数的测量、分析的结果可知,硼、磷扩散浓度和金掺杂总量都会改变n基区的金分布,且不同的金分布相应于不同V_T~t_q。折衷曲线。所以,快速晶闸管n基区金浓度的最佳分布,应当有相应的最佳V_T~t_q折衷曲线,它依赖于硼、磷、金扩散的最佳配合。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关thyristor的内容
在知识搜索中查有关thyristor的内容
在数字搜索中查有关thyristor的内容
在概念知识元中查有关thyristor的内容
在学术趋势中查有关thyristor的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社