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   free silicon 的翻译结果: 查询用时:0.181秒
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free silicon
相关语句
  游离硅
     STUDY ON PREPARATION OF SUBMICRON β-Si_3N_4 POWDER WITH LOW FREE SILICON CONTENT BY SHS
     SHS法合成低游离硅亚微米级β-Si_3N_4研究
短句来源
     After further treatment at 1600℃ in nitrogen atmosphere,extremely weak diffraction peaks for free silicon and intense peaks for α-Si_3N_4 were observed by XRD patterns,however,there was no phase transition from α-Si_3N_4 to β-Si_3N_4 all along.
     陶瓷产物在氮气下1600℃处理后的X射线衍射谱图表明,游离硅已基本消失,α-Si3N4衍射峰加强,但是没有观察到从α-Si3N4到β-Si3N4的相转变。
短句来源
     Free silicon and aluminum in ultrafine SiC, Si3N4 and AlN powder were determined by reacting them with alkali to generate hydrogen which was measured by thermal conductometry.
     利用游离硅(Sif)和游离铝(Alf)与碱溶液作用产生氢气,使它们与SiC、Si3N4、AlN、SiO2以及Al2O3等多种硅(铝)化合物分离。
短句来源
     The microstructure of SiC fiber has been examined by Raman spectroscopy, the result indicated that there is free silicon in SiC fiber.
     文章利用拉曼光谱对SiC纤维的微观结构作了分析,研究发现,在SiC纤维的拉曼谱线中出现了游离Si的散射峰,这证实了CVD SiC纤维中含有游离硅
     In nitrogen gas,the protective layerof Si2 N2 O was produced through the reaction of nitrogen with oxidic film formed on the face of silicon powder before mill,which prevented nitrogen from progressively diffusing,resulting in a lot of non- reaction free silicon in prod- uct.
     在氮气中 ,高能球磨前硅粉表面形成的氧化膜在高能球磨过程中与氮反应生成 Si2 N2 O保护层 ,阻止氮的进一步扩散 ,使反应产物含有大量未反应的游离硅
短句来源
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  “free silicon”译为未确定词的双语例句
     When the content of free silicon was 22.4 vol%, flexural strength and fracture toughness reached the maximum values, 386 MPa and 4.19 MPa·m1/2 respectively.
     抗弯强度和断裂韧性在硅体积含量为22.4%时达到最高,分别为386MPa和4.19 MPa·m1/2。
短句来源
     X-ray patterns showed that the main phases of the polymer-derived ceramic product at 1400℃ in nitrogen atmosphere were(α-Si_3N_4) and some free silicon,and the empirical chemical formula for the product was SiN_(1.036)O_(0.060)C_(0.028) by elemental analysis.
     将陶瓷产物在氮气下1400℃处理后,其主要成分为α-Si3N4,并含有少量富余硅,化学经验式为SiN1.036O0.060C0.028。
短句来源
     Results The average dust concentration in natural and artificial gem processing workshops were 1.9mg/m~3 and 3.8mg/m~3,and the average free silicon contents of the gem dusts were 70.9% and 44.9%.
     结果天然宝石厂与人造宝石厂工作场所粉尘平均浓度分别为1.9mg/m3和3.8mg/m3,粉尘中游离SiO2平均含量分别为70.9%和44.9%;
短句来源
     Finally, free silicon reacts with nitrogen to form Si_3N_4 crystal nuclei and grow up.
     生成的Si与氮气发生反应,形成Si_3N_4晶核,并不断长大。
短句来源
     Free silicon was detected in the 30% and 40% SiC-diluted samples with 45% porosity, while no free silicon was found in the 50% porosity green parts.
     孔隙率为45%,含量为30%SiC和40%SiC压坯的合成产物中残留游离Si,50%SIC压坯的合成产物中未发现游离Si。
短句来源
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  相似匹配句对
     DETERMINATION OF FREE SILICON IN SILICONCARBIDE
     碳化硅中游离硅(Si_f)的测定
短句来源
     DEVELOPMENT AND APPLICATION OF SILICON-FREE MANGANESE ALLOYS
     锰系无硅复合合金的开发与应用
短句来源
     On f-free Subsets
     关于f-free子集
短句来源
     Free design
     自由的设计
短句来源
     Silicon Photonics
     硅光子学
短句来源
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  free silicon
Low temperature, defect-free silicon epitaxy using a low kinetic energy particle process
      
The infiltrated specimens showed alternating bands of dark and bright regions, which corresponded to the unreacted free carbon and free silicon regions, respectively.
      
Results show that the presence of free silicon on the surface of SiC significantly reduces the contact angle between the molten alloy and the substrate.
      
The free silicon generated by the decomposition reaction diffuses into the interlayer, whereas part of the free nitrogen disappears to the surface, the remainder being trapped in the form of pores.
      
The free silicon generated by the decomposition reaction diffuses into the steel, whereas the nitrogen is trapped in pores.
      
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Defects in dislocation-free silicon single crystals grown by floating-zone method in the atmosphere containing Ar-H2 or H2 were investigated by means of chemical etching and X-ray projection topography. It has been found that anomalous etch pits and defect density are closely related to the hydrogen content. (Change of the defect density with hydrogen content shows a maximum at approximately 10% hydrogen for ay-grown crystals. After annealing at high temperatures, the defect density in the inner part of...

Defects in dislocation-free silicon single crystals grown by floating-zone method in the atmosphere containing Ar-H2 or H2 were investigated by means of chemical etching and X-ray projection topography. It has been found that anomalous etch pits and defect density are closely related to the hydrogen content. (Change of the defect density with hydrogen content shows a maximum at approximately 10% hydrogen for ay-grown crystals. After annealing at high temperatures, the defect density in the inner part of the crystal is found to be more than that at the surface and also more than that in as-grown state when hydrogen content is greater than 25% in the atmosphere.)

利用化学腐蚀和X射线投影貌相方法研究了含氢气氛下区熔无位错硅单晶中的缺陷,发现异常腐蚀现象、缺陷密度与气氛中氢含量紧密相关,观测了纯氢气氛下无位错硅单晶退火后的缺陷,找到了貌相与蚀象的对应关系,还观察了二次退火效应,最后,综合所观测到的结果,讨论了氢在硅单晶中的集聚、沉淀和位错环列的发射、运动及交互作用。

In order to find out which metals cause s-pits in silicon epitaxial layers in ordinary production conditions, some of the pure metals, such as Fe, Cr, Cu, Au, and aqueous solutions of FeCl3, CuCl2 and NaCl were used for intentional contamination. The samples were <111>rientation, CZ dislocation-free silicon single crystal wafers. After such contamination, a hydrogen heat treatment or an epitaxy process was carried on at about 1200℃. It was observed that the contamination of Fe or FeCl3 always produced...

In order to find out which metals cause s-pits in silicon epitaxial layers in ordinary production conditions, some of the pure metals, such as Fe, Cr, Cu, Au, and aqueous solutions of FeCl3, CuCl2 and NaCl were used for intentional contamination. The samples were <111>rientation, CZ dislocation-free silicon single crystal wafers. After such contamination, a hydrogen heat treatment or an epitaxy process was carried on at about 1200℃. It was observed that the contamination of Fe or FeCl3 always produced s-pits defects, and the same with Cr. But when the substrates were contaminated by Cu, Au, or NaCl, CuCl2, no s-pits were observed.Metals which cause s-pits in silicon epitaxial layers will produce the same defects in single crystal substrates.

本文用高纯金属Fe、Cr、Cu、Au及光谱纯、FeCl_3、CuCl_2和NaCl的水溶液,在工艺条件可能的情况下,对直拉(111)硅单晶片进行有意沾污,并在1200℃下进行外延或氢中热处理。观察到Fe的沾污极易产生浅坑缺陷,Cr也能产生;而Cu、Au、NaCl的沾污则未见产生浅坑。 能引起外延层中浅坑缺陷的金属,可在单晶中引起同类缺陷。

This paper presents the effects of various processing parameters on the micro-structure and mechanical properties of the reaction bonding silicon carbide (RB-SC),and gives the following experimental results;1.The green density can greatly influence the microstructure and mechani-cal properties of the RBSC,so it is very important to control the green densityby selecting optimum processing factors.2.The sample of № RB-24 possesses the following properties;density 3.05-3.09 g/cm~3:free silicon 15 vol.%;bend...

This paper presents the effects of various processing parameters on the micro-structure and mechanical properties of the reaction bonding silicon carbide (RB-SC),and gives the following experimental results;1.The green density can greatly influence the microstructure and mechani-cal properties of the RBSC,so it is very important to control the green densityby selecting optimum processing factors.2.The sample of № RB-24 possesses the following properties;density 3.05-3.09 g/cm~3:free silicon 15 vol.%;bend strength at room temperature 640 MPa;K_(1c) at room temperature 4.3;.hardness HR_A 92.5;Weibull modulus 14.3.The properties of corrosion resistance and wear resistance of the RBSCare superior to that of cemented carbide and highly pure alumina.

本文介绍了不同工艺参数对反应烧结碳化硅材料(RBSC)的显微结构和力学性能的影响,给出了这种材料的一些实验结果总结如下:1.素坯密度对 RBSC 材料的显微结构和力学性能产生很大的影响,所以控制适当的素坯密度是非常重要的;2.RB-24的 RBSC 试样性能:密度3.05~3.09g/cm~3;游离硅15vol%,室温抗弯强度640MPa;室温时 K_(1c)为4.3,硬度 HR_A=92.5;韦伯尔模数为14;3.RBSC 材料的耐腐蚀性能和耐磨性能优于硬质合金和高纯 Al_2O_(?)。

 
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