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crystals defects
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  相似匹配句对
     Defects of CsI(Tl) Crystals
     掺铊碘化铯晶体的生长缺陷
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     KDP晶体缺陷的观测
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     论软件缺陷
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New etch figures of quartz plates have been produced under the action of hydrofluoric acid and high d. c. voltage simultaneously, When the X-section, Y-section, Z-section and the rhembhedral faces are etched under high d. c, voltage, Twelve kinds of electric etch figures can be, produced. The shapes of the electric etch figures not only depend upon the orientation of the crystal but also depend upon the direction of the electric field. The fissure-like lines of the electric etch figures produced on the...

New etch figures of quartz plates have been produced under the action of hydrofluoric acid and high d. c. voltage simultaneously, When the X-section, Y-section, Z-section and the rhembhedral faces are etched under high d. c, voltage, Twelve kinds of electric etch figures can be, produced. The shapes of the electric etch figures not only depend upon the orientation of the crystal but also depend upon the direction of the electric field. The fissure-like lines of the electric etch figures produced on the +X side and -X side of the X-section may he used for the determination of the orientation of the principal types of zero-coefficient oscillatcr-plates and one of these figures may be used as the model representing Young's modulus. These electric etch figures are randomly distributed. The positions of the electric etch figures may be the locations of the crystal defects. Since the electric field at the locations of the crystal defects may not be uniform, so that the forces acted on the atoms of the crystal at these pcsitio(?)s may be different.

水晶的X截面,Y截面,Z截面以及大小菱方r面和z面同時在垂直的直流電場和氟氫酸的作用下,得到十二种不同的新腐蝕圖形,这种圖形的形狀不僅与晶軸觔方位有关並且与電場方向有关。X截面上的電腐蝕圖形中的似細微裂縫線條几与主要的溫度系數為零的振動晶片的切割方向一致,其中的一种圖形与各向異性的楊氏模量表示圖一致。電腐蝕圖形可能出現于有缺陷的位置,其原因可能是由于在缺陷处電場不均原子所受之電場力不同所致。

In this article, starting with the depiction of the crystal structure, the relationship between the crystallization habit of the synthetic quartz and the physical and chemical conditions for its growth is described. The author puts forward a viewpoint that the simple form of the trigonal trapezohedron plays an important role during the growing period. By means of analysing the crystallization habit, an outer to inner relation between the external and the internal structures of the synthetic quartz has...

In this article, starting with the depiction of the crystal structure, the relationship between the crystallization habit of the synthetic quartz and the physical and chemical conditions for its growth is described. The author puts forward a viewpoint that the simple form of the trigonal trapezohedron plays an important role during the growing period. By means of analysing the crystallization habit, an outer to inner relation between the external and the internal structures of the synthetic quartz has been established. Moreover, a correlation between the crystallization habit of the trigonal trapezohedron and the crystal defects has been studied for various seed orientations, namely the Z-cut, Y-cut, X-cut and the cut which intersects the Z-axis at 55°. The results of the experimental investigations show that the defects of synthetic quartz, usually called "facet defects", arise mainly from the growth traces of the crystal faces of the trigonal trapezohedron, while in the X-cut and Y-cut crystals there are still pyramidal growth interface defects formed between the various crystal faces concerned.

本文从晶体结构入手研究了水晶的结晶习性与生长时物理、化学条件之间的关系,提出三方偏方面体单形在水晶生长过程中具有重要作用的论点。通过对水晶结晶习性的剖析,使表面结构与内部结构得到由表及里的联系。从籽晶取向(z切,y棒,x棒与z轴相交55°切型等)研究了三方偏方面体结晶习性与晶体缺陷之间的关系。结果表明:人工水晶中的缺陷主要是三方偏方面体晶面的生长痕迹,称之为“子面缺陷”;在y棒和x棒晶体中还有各族晶面之间形成的“生长锥界面缺陷”。

Various kinds of crystal defects, such as ferroelectric domain boundaries, growth bands, dislocations, subgrain boundaries and cellular structures, etc. in Czochraski-grown ferroelectric LiNbO3 single crystals were investigated by X-ray transmission topographic technique. The defects were identified by means of invisibility conditions using different diffractions, as well as X-ray anomalous scattering effect and optical microscopy. We have discussed the formation of domain boundaries in LiNbO3...

Various kinds of crystal defects, such as ferroelectric domain boundaries, growth bands, dislocations, subgrain boundaries and cellular structures, etc. in Czochraski-grown ferroelectric LiNbO3 single crystals were investigated by X-ray transmission topographic technique. The defects were identified by means of invisibility conditions using different diffractions, as well as X-ray anomalous scattering effect and optical microscopy. We have discussed the formation of domain boundaries in LiNbO3 and their relation to the growth bands.

用X射线透射扫描形貌方法观察了直拉法生长LiNbO~3晶体中各种类型点阵缺陷,诸如铁电畴壁、生长层、位错、亚晶界和胞状组织等;用不同衍射矢量对[001]和[210]方向生长的晶体的形貌消象规律,结合X射线铁电异常散射效应和光学显微观察,讨论了晶体中180°铁电畴和生长层的衬度及其分布,并研究了LiNbO~3晶体中180°畴壁形成及其相互关系。

 
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