助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   fpa device 的翻译结果: 查询用时:0.178秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

fpa device
    很抱歉,暂未找到该词条的译词。
相关语句
  “fpa device”译为未确定词的双语例句
     The Silicon Microlens Arrays Fabricated by Ion Beam Etching for IR CCD FPA Device
     面阵IRCCD摄像芯片用折射微透镜阵列的离子束刻蚀制作
短句来源
     Gamma radiation effects on MWIR HgCdTe FPA device
     中波红外焦平面列阵探测器γ辐照效应
短句来源
  相似匹配句对
     Gamma radiation effects on MWIR HgCdTe FPA device
     中波红外焦平面列阵探测器γ辐照效应
短句来源
     Infusion device
     输血输液装置
短句来源
     IR FPA is the important photo-electronic device of capturing infrared radiation information.
     红外焦平面阵列是获取景物红外光辐射信息的重要光电器件。
短句来源
     FPA was edtected by HPLC;
     尿液FPA;
短句来源
     Switch Device of HTSC
     高温超导体开关器件理论分析
短句来源
查询“fpa device”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


In this paper the development of MCT hybird-FPA device and the demonstration of thermal IR image of target at room temperature for 32 ×32 elements in range of long wavelength are introduced. The device adopts MBE MCT thin film material, pan-planar ion implantation process which forms P-N junction, Si-CMOS readout circuit, hybird flip chip bonding interconnection and backside-illumination mode. Some breadthrough have been achieved with the results up-to-date as follows: Response non-uniformity is...

In this paper the development of MCT hybird-FPA device and the demonstration of thermal IR image of target at room temperature for 32 ×32 elements in range of long wavelength are introduced. The device adopts MBE MCT thin film material, pan-planar ion implantation process which forms P-N junction, Si-CMOS readout circuit, hybird flip chip bonding interconnection and backside-illumination mode. Some breadthrough have been achieved with the results up-to-date as follows: Response non-uniformity is 12. 4 %, response wavelength 8 ~ 10μm, NETD about 0. 1K (FOV= 60°), Dλ* more than 1 ×1010cmHz1/2W-1 and valid elements more than 98 %. The study work has resolved a series of crucial technical problem and had the leading position in China.

文章介绍了32×32元长波碲镉汞混成焦平面器件研制及室温目标红外热成像演示。该器件采用MBE碲镉汞薄膜材料、全平面离子注入成结工艺、Si-CMOS读出电路、倒焊互联混成、背照工作模式。所研制的32×32元碲镉汞长波焦平面器件获得了突破性进展,最新结果为Dλ*>1×1010cmHz1/2W-1,响应率不均匀性为12.4%,有效像元>98%,NETD约为0.1K(FOV=60°),响应波长8~10μm。该器件实现了室温目标红外热成像。该项工作处于国内领先水平。在研制过程中解决了一系列关键问题,为研制更大规模的红外焦平面器件奠定了坚实的技术基础。

A new nonuniform correction method,“S”curve model algoriityhm,is proposed.The algorithm is used to correct nonuniformity and nonlinearity of FPA devices and it has the advantages of large dynamic range,small storage capacity and high corrective accuracy,etc.

本文在分析现行各种非均匀校正算法优缺点的基础上 ,根据红外焦平面器件探测单元响应曲线特点和神经网络理论 ,提出一种新的非均匀校正方法——“S”曲线模型算法。该算法能同时校正焦平面器件的非均匀性和非线性 ,并且具有动态范围大、存贮容量小和校正精度高等优点。

The basic principle and steps to measure the interface state density energy distribution of the passivation films in HgCdTe MIS devices by a low and high frequency capacitance combination technology are presented. The study has indicated that the passivation films of self-anodic sulfidization + ZnS have met all of the surface passivation requirements of the PV HgCdTe focal plane array (FPA) devices.

介绍了用高、低频组合电容法测量HgCdTe MIS器件钝化层界面态密度能量分布的基本原理和步骤.研究表明,自身阳极硫化+单层ZnS对HgCdTe的表面钝化已经达到光伏焦平面器件表面钝化的各项要求.

 
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关fpa device的内容
在知识搜索中查有关fpa device的内容
在数字搜索中查有关fpa device的内容
在概念知识元中查有关fpa device的内容
在学术趋势中查有关fpa device的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社