助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   light emission materials 的翻译结果: 查询用时:0.197秒
图标索引 在分类学科中查询
所有学科
无线电电子学
更多类别查询

图标索引 历史查询
 

light emission materials
相关语句
  发光材料
     Si based light emission materials were fabricated by Si +, N + coimplanting into SiO 2 films, Si + and N + ions were sequentially implanted with three energies and the distribution of both ions were overlapped in the implanted region.
     报道了用叠加能量Si+、N+共注入SiO2薄膜研究硅基发光材料。 Si+、N+先后注入SiO2薄膜,并在衬底中重叠。
短句来源
  “light emission materials”译为未确定词的双语例句
     in contrast, organic light emission materials with FWHM of 50-100nm and impure emission color only use the energy of singlet, Moreover, they have a low quantum efficiency (theory maximum value of 25%).
     而稀土配合物的半峰宽窄(10-20nm)、光色纯、发光效率高,它不仅可利用配体激发单重态能量,而且可利用配体激发三重态能量,发光效率理论上为100%。
短句来源
  相似匹配句对
     White Light Emission from Exciplex
     利用激基复合物发光的有机白光电致发光器件
短句来源
     Advances in organic light-emission
     有机电致发光研究与应用进展
短句来源
     The Nature of Light
     光的本性
短句来源
     The Light of Ration
     理性之光
短句来源
     The stimulated emission
     报道了一种新型聚合物染料的受激发射特性
短句来源
查询“light emission materials”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
没有找到相关例句


The thesis is on the basis of the principle researches of spectrum of the electris optical radio frequency and phase modulation in the cavity with light emission material by the use of theory and experiment in order to explore the ability of phase enhance modulation on the basis of calculation, and got the theoretical result that the cavity's enhancing times was 9 times when the modulation frequency was 10 Mhz,which was proved by experiment.

本文首次报导了以电光射频位相调制光谱技术为基础,对有源腔内位相调制增强的机理进行了理论和实验的研究结果。数值计算得到了腔内调制存在腹增强效应。在调制频率为10MHz时,理论腔增强倍数为9倍,并在实验上获得了验证。

Si based light emission materials were fabricated by Si +, N + coimplanting into SiO 2 films, Si + and N + ions were sequentially implanted with three energies and the distribution of both ions were overlapped in the implanted region. Short wavelength peaks at~340nm and ~ 427nm were measured in room temperature PL spectra of the annealed samples. Photoluminescence excitation (PLE) spectra were also studied and the light emission mechanisms are briefly discussed.

报道了用叠加能量Si+、N+共注入SiO2薄膜研究硅基发光材料。Si+、N+先后注入SiO2薄膜,并在衬底中重叠。样品退火后在紫外光激发下,可以观察到很强的紫外(~340nm)和紫色(~427nm)光致发光(PL)。还研究了光致发光激发(PLE)谱并对发光机制进行了探讨。

The silicon based optical emitting materials are always the first candidate materials for the optoelectronic IC (OEIC) and its engineering applications, due to its low cost and the excellent compatibility with the advanced Si technology in microelectronics. However, the crystalline bulk silicon is an indirect electronic bandgap semiconductor with very poor light emission efficiency. It has been considered unsuitable for optoelectronic applications. A great challenge to experimenters and...

The silicon based optical emitting materials are always the first candidate materials for the optoelectronic IC (OEIC) and its engineering applications, due to its low cost and the excellent compatibility with the advanced Si technology in microelectronics. However, the crystalline bulk silicon is an indirect electronic bandgap semiconductor with very poor light emission efficiency. It has been considered unsuitable for optoelectronic applications. A great challenge to experimenters and theorists is that how to make or design an efficient Si based light emission material using an advanced technology and physics principles. In recent, several schemes, except porous silicon, have been suggested which include the silicon nanocrystals, c Si/O superlattices (SLs) and dislocation engineering. The light emission efficiency has been improved greatly in these Si based systems. Based on the review of these new achievements, design a Si based material with direct bandgap is considered a more direct solution. Because of the interface states in Si based devices have a slow response rate in optical processes . Avoiding interface states are very important for the high speed optical devices and its applications. However, one does not know any critical rule for designing the newly Si based materials with a direct band gap until now. In this paper we suggest an empirical symmetry rule and design a series of Si based superlattices. The computer simulations indicate that one of these superlattices, Se/Si 10 /Se/Si 10 /Se, is a semiconductor with a direct gap character and its band gap lie in the infrared range, perhaps, to be lie in the window of minimal absorption in current optical fibers. It is expected that the materials and its devices have the excellent abilities for light emission and other optical properties . In addition, this material is easily compatible with Si microelectronics technologies. Therefore, the material produced from computational design may be having potential applications in the field of the optoelectronics .

由于Si基光发射材料具有与先进的Si微电子技术兼容和成本低廉的优势 ,一直是光电子集成 (OEIC)工程应用的首选材料。但由于体材料Si是一种间接带隙半导体 ,不可能成为有效的光发射体。如何通过已有的物理学原理和可行的微加工技术把它改造成为有效的发光材料 ,甚至成为严格意义上的直接带隙材料 ,给实验研究工作者和材料设计理论工作者提出了挑战。除多孔Si之外 ,最近已有若干令人鼓舞的方案 ,包括Si纳米晶、Si/O超晶格和注硼位错工程等方法 ,实现了Si基材料的有效发光试验。本文在分析其中最令人关注的进展的基础上 ,认为要实现高效率、高响应速率的Si基发光材料 ,以适应超高速、大容量信息处理和传输的要求 ,较好的途径是直接设计出具有直接带隙的Si基材料。因为避免界面态参与发光过程 ,对于提高响应速度至关重要。但是如何设计直接带隙的半导体材料并没有现成的规则可依循。我们建议一个经验的对称性法则 ,并设计出一种新的硅基超晶格。通过计算机模拟计算表明 ,其中Se/Si10 /Se/Si10 /Se超晶格具有相当理想的直接带隙特征 ,其带隙处于红外波段。预期这类新材料及有关器件会有优越的光发射和各种光学性能 ,其制作也可...

由于Si基光发射材料具有与先进的Si微电子技术兼容和成本低廉的优势 ,一直是光电子集成 (OEIC)工程应用的首选材料。但由于体材料Si是一种间接带隙半导体 ,不可能成为有效的光发射体。如何通过已有的物理学原理和可行的微加工技术把它改造成为有效的发光材料 ,甚至成为严格意义上的直接带隙材料 ,给实验研究工作者和材料设计理论工作者提出了挑战。除多孔Si之外 ,最近已有若干令人鼓舞的方案 ,包括Si纳米晶、Si/O超晶格和注硼位错工程等方法 ,实现了Si基材料的有效发光试验。本文在分析其中最令人关注的进展的基础上 ,认为要实现高效率、高响应速率的Si基发光材料 ,以适应超高速、大容量信息处理和传输的要求 ,较好的途径是直接设计出具有直接带隙的Si基材料。因为避免界面态参与发光过程 ,对于提高响应速度至关重要。但是如何设计直接带隙的半导体材料并没有现成的规则可依循。我们建议一个经验的对称性法则 ,并设计出一种新的硅基超晶格。通过计算机模拟计算表明 ,其中Se/Si10 /Se/Si10 /Se超晶格具有相当理想的直接带隙特征 ,其带隙处于红外波段。预期这类新材料及有关器件会有优越的光发射和各种光学性能 ,其制作也可方便地与硅微电子工艺兼容。因此 ,它在信息光电子领域有强大的应用潜力

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关light emission materials的内容
在知识搜索中查有关light emission materials的内容
在数字搜索中查有关light emission materials的内容
在概念知识元中查有关light emission materials的内容
在学术趋势中查有关light emission materials的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社