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implantation damage
相关语句
  注入损伤
     The carrier capture efficiency enhancement is induced by intermixing and degradation by the implantation damage which mutually compete, so there exists a critical implantation dose (N-C).
     界面混合导致的俘获效率的增加和注入损伤引起的非辐射复合是相互竞争过程,存在一个临界的注入剂量NC,当注入剂量N小于NC,界面混合作用较为明显,量子点发光峰强随注入剂量增加而增强;
短句来源
     In low temperature photoluminescence a blue shift of emission energy from 30 to 90meV was observed. The shift was found to be dependent on the implantation damage and as a function of the annealing temperature and time. The interdiffusion coefficient of 10 -15 10 -17 cm 2/s by RTA was calculated.
     用注入Ga离子GaAs/AlGaAs量子阱在快速热退火中大大加快了异质结界面的互扩散,表现在PL光谱中量子阱峰值能量有30~90meV的兰移.发现兰移大小同注入损伤程度、退火的温度及时间有关,并得到快速退火中的互扩散系数D约为10-15~10-17cm2/s
短句来源
  “implantation damage”译为未确定词的双语例句
     Monte Carlo simulation and analysis of energetic particles’ implantation damage to the tumor cells in BNCT
     BNCT中载能粒子对肿瘤细胞损伤效应的Monte Carlo模拟及分析
短句来源
     Monte Carlo simulation and analysis of α-particle implantation damage to cancer cells
     α粒子对人体癌细胞损伤过程的蒙特卡罗模拟及分析
短句来源
     The temperature profile produced by stationary CW CO2-laser irradiation is capable of annealing As+ ion implantation damage in Si with a solid-state regrowth mechanism.
     激光背面照射可以增强退火效果。 连续CO_2激光照射可以固相外延再生长的方式使As离子注入Si的损伤层退火恢复。
短句来源
     The difference of TRR spectra between P2+ and P2+ implanted samples annealed at 550℃ is due to the difference in implantation damage of the two different implants.
     发现了P_2~+,P~+注入硅样品的固相外延过程具有不同的特征。 这种差异是由于P_2~+和P~+在硅中引入不同的损伤造成的。
短句来源
     (3)No thorough sterilization at the puncture point, c arelessness at sterilization, prolonged duration of implantation, damage of pace maker to the skin.
     (3)病人穿刺部位皮肤消毒不彻底,操作者无菌技术不严,手术时间过长,高龄及瘦弱病人因皮下组织薄起搏器磨损皮肤。
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  相似匹配句对
     Damage Mechanism of N and Bi Implantation into InP
     氮和铋离子注入InP损伤机理的分析
短句来源
     They are FEA oxidation, sputtering damage and ion implantation.
     阴极氧化、溅射损伤和离子注入是目前提出的三种解释。
短句来源
     On Construction Damage
     施工索赔研究
短句来源
     2. damage.
     2、损害事实。
短句来源
     (7)Implantation;
     (7)种植 ;
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  implantation damage
Recrystallization is necessary to remove implantation damage and optically activate Er/O complexes for light emission at 1.54 μm.
      
It was proposed that the ultra-fast ramp-up was suppressing transient enhanced diffusion (TED) of boron caused by implantation damage.
      
This diffusion is most probably not driven by implantation damage, but by intrinsic defects in the grown crystal.
      
By SIMS, it was found that B piles up at the interface to the regrown layer, which could be explained by enhanced diffusion from an increased concentration of point defects created by implantation damage in the region.
      
A study of the ion implantation damage and annealing behavior in GaSb
      
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The effects of CW CO2-laser irradiation on semiconductors are studied with primary emphasis on the physics of the process. Experimental results and theoretical considerations show that semiconductor sample can be heated to desired temperatures by CW CO2-laser irradiation. The CW CO2-laser irradiation with wavelength of 10.6 μm is different from the other short wavelength lasers in the following features: light absorption of laser radiation through free carrier absorption, uniform temperature distribution throughout...

The effects of CW CO2-laser irradiation on semiconductors are studied with primary emphasis on the physics of the process. Experimental results and theoretical considerations show that semiconductor sample can be heated to desired temperatures by CW CO2-laser irradiation. The CW CO2-laser irradiation with wavelength of 10.6 μm is different from the other short wavelength lasers in the following features: light absorption of laser radiation through free carrier absorption, uniform temperature distribution throughout the thickness of the wafer, enhancement of annealing efficiency by laser irradiation from back surface. The temperature profile produced by stationary CW CO2-laser irradiation is capable of annealing As+ ion implantation damage in Si with a solid-state regrowth mechanism. During the regrowth process the implanted As+ ions are incorporated into substitutional lattice sites and can be made electrically active to a high degree without redistribution of the original profile. Using CO2-laser irradiation from the back surface we have produced ohmic contacts with excellent electrical properties for GaAsFET without damaging the device structure on the front surface.

本文主要研究连续CO_2激光对半导体的照射效应。实验结果与理论分析说明,用连续CO_2激光照射可将半导体样片加热到所需的温度。与其它短波长的激光不同,波长为10.6μm的连续CO_2激光照射半导体有如下特点:CO_2激光是借助于自由载流子吸收与半导体耦合;样片在深度方向被均匀加热;激光背面照射可以增强退火效果。连续CO_2激光照射可以固相外延再生长的方式使As离子注入Si的损伤层退火恢复。在再生长的过程中注入的As离子进入替位,电激活率很高,而且不发生杂质再分布。将连续CO_2激光背面照射成功地应用于GaAsFET制备欧姆接触,既可避免激光正面照射对器件结构的破坏,又能得到比热退火为好的电学性能。

High-dose (10~(16)cm~(-2))As~+-implanted silicon wafers are irradiated transiently using aRF heated graphite as an infrared irradiation source.Satisfactory results are obtained:theelectrical activation of the dopants is 100% complete.In contrast with the conventional fur-nace annealing,better recovery of the implantation damage is obtained and the dopant re-distribution is weakened greatly,P-N junctions annealed in this way show good electricalcharacteristics.It is believed that the IR annealing has a...

High-dose (10~(16)cm~(-2))As~+-implanted silicon wafers are irradiated transiently using aRF heated graphite as an infrared irradiation source.Satisfactory results are obtained:theelectrical activation of the dopants is 100% complete.In contrast with the conventional fur-nace annealing,better recovery of the implantation damage is obtained and the dopant re-distribution is weakened greatly,P-N junctions annealed in this way show good electricalcharacteristics.It is believed that the IR annealing has a good prospect in the applicationof VLSI.

用高温石墨作为红外辐射源,对高浓度的注砷硅进行了瞬态(13 秒)辐照,达到非常好的退火效果.对于10~(16)cm~(-2)剂量的注砷硅可达到100%的电激活,且损伤恢复比热退火(1100℃,30分)情况要好,引起的注入原子的再分布比常规的高温热退火要小得多.用本方法退火的注砷硅PN结具有良好的电特性。因此,在 VLSI工艺中它是一种很有应用前景的离子注入退火技术.

The influence of implantation damages on the anomalous diffusion of implanted boroninto silicon during rapid thermal annealing has been observed by varying the relative positionof boron profile and damage distribution produced by self-implantation at different energies.The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron. The point defects induc-ed by implantation and by disolution...

The influence of implantation damages on the anomalous diffusion of implanted boroninto silicon during rapid thermal annealing has been observed by varying the relative positionof boron profile and damage distribution produced by self-implantation at different energies.The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron. The point defects induc-ed by implantation and by disolution of clusters are a driving force of anomalous diffusion ofboron.In heavily damage case when extended defects are present, the point defects emitted bythese extended defects provide another driving force for the anomalous diffusion.

本工作用不同的Si~+预注入能量,改变注入损伤分布与离子注入硼杂质分布的相对位置,观察快速热退火中注入损伤对硼异常扩散的影响.结果表明,引起注入硼异常扩散的是点缺陷,而不是硼间隙原子的快扩散.而注入损伤中的点缺陷和簇团分解释放的点缺陷是驱动硼异常扩散的因素之一.如果注入损伤形成了扩展缺陷,那么扩展缺陷重构和分解将发射点缺陷,这是驱动硼异常扩散的另一个因素.

 
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