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   electric field induced 在 材料科学 分类中 的翻译结果: 查询用时:0.149秒
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electric field induced
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  电场诱导
    Study on the Mechanism of the Electric Field Induced Combustion Synthesis of Iron-based Composites
    电场诱导燃烧合成铁基复合材料及机理研究
短句来源
    On the other hand, comparing the results of the electric field induced combustion synthesis process with that of the thermal analysis and high-temperature XRD, which are under the simple thermal field, the conclusion could be verified further that the ignition temperature could be decreased to a considerable degree under the electric field induction.
    另一方面,通过对电场诱导下体系燃烧合成过程进行解析实验,并与该体系在单纯热场作用下的热分析和高温XRD的实验结果进行对比,进一步证实了电场诱导作用可大幅降低体系点火温度的结论。
短句来源
    In conclusion, the results demonstrated that the synthesis process under the coupling action of electric and thermal field was different from that under the simple thermal field, and the kinetic process of the electric field induced combustion synthesis could be describe as: Firstly, in the early period of heating process, the solid diffusion among reactants was strengthened under the common effect of electric field and great thermal density.
    结果表明:体系的合成反应过程在电场和热场的祸合作用下与在单纯热场下有所不同,电场诱导下燃烧合成动力学过程为:在加热早期,体系在电场和大热流密度的共同作用下,反应物间的固相扩散加强,体系虽未发生化学反应,但显微结构在一定程度随温度而发生变化;
短句来源
    Nanometer sized dots, lines and pattern have been successfully created onto Si doped n + GaAs(100) and Zn doped p GaAs(100) based on electric field induced local oxidation. The smallest dot is ca. 15nm.
    基于AFM电场诱导的方法成功地在硅掺杂n+型GaAs(100)和锌掺杂p型GaAs(100)表面局域氧化制备了纳米尺度的点、线、图形,最小的纳米结构约15nm,并定性地考察了GaAs表面AFM电场诱导制备纳米结构的一些规律。
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  “electric field induced”译为未确定词的双语例句
    The result shows that the shape of respnding peak changed in SPS andPAS of La_(0.8)Sr_(0.2)FeO_3 with different particle-size. Differences existed in SPSresponding range and intensity which can be explained by quantum effect andsurface effect. The characters of p-type photovoltage in this material isrepresented in electric field induced SPS (EFISPS).
    研究结果表明,不同粒径的La_(0.8)Sr_(0.2)FeO_3的表面光电压谱及光声光谱不仅响应曲线的峰型发生变化,其响应范围及响应强度也存在明显的差异,这充分体现了纳米材料的量子尺寸效应和表面效应。
短句来源
    Increasing y/x,a maximum value of the electric field induced shear stress for the ER fluids occurred while the leak current density monotonously decreased.
    随着y/x的增加,ER液的电致剪切应力在y/x=64时出现最大值,漏电流单调降低。
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  electric field induced
The spontaneous and electric field induced phase retardations have been measured as a function of temperature in a KDP crystal using an accurate method.
      
Electric Field Induced Suppression of the Magnetoresistance of Dilute Magnetic Semiconductor Trilayers
      
Correlations between the bipolar and the unipolar electric field induced strain in the electrostrictive Pb(Mg1/3Nb2/3)O3-Pb(Zr1/
      
Electric field induced interfacial reaction of Au-Ag bimetal film on SiO2 surface
      
The dc electric field induced change in the dielectric constant tends to increase with the dielectric constant and is largest for as-deposited films on MgO and post-deposited annealed films on LAO.
      
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In this paper, the definition of the ideal actuator materials has been given. The new type of actuator materials by combining field driving with phase transformation has been developped. The materials systems (just as BaTiO3) showing electric field induced phase transformatio'n have been researched. The results showed that the ideal actuator materials could be obtained by means of field induced phase tramsfrmation.

从驱动组元的工作机理角度,系统分析了目前可用于智能材料系统中的驱动材料,提出了场诱发相变驱动材料的设计思想,对场诱发相变的铁电体和反铁电体材料进行优化设计和制造,结果表明:研制场诱发相变的理想驱动材料是可能的。

Nanometer sized dots, lines and pattern have been successfully created onto Si doped n + GaAs(100) and Zn doped p GaAs(100) based on electric field induced local oxidation. The smallest dot is ca.15nm.The rules of nanooxidation on GaAs are also investigated.

基于AFM电场诱导的方法成功地在硅掺杂n+型GaAs(100)和锌掺杂p型GaAs(100)表面局域氧化制备了纳米尺度的点、线、图形,最小的纳米结构约15nm,并定性地考察了GaAs表面AFM电场诱导制备纳米结构的一些规律。

An analysis for the problems of crack in homogeneo us piezoelectrics or on the interf aces of two dissimilar piezoelectr ic materials is presented based on the continuity of normal electric displacement and electric potential across the crack faces. The explic it analytic solutions are obtained for a single crack in piezoelectri cs or on the interfaces of piezoele ctric bimaterials. A class of boun dary problems involving many crack...

An analysis for the problems of crack in homogeneo us piezoelectrics or on the interf aces of two dissimilar piezoelectr ic materials is presented based on the continuity of normal electric displacement and electric potential across the crack faces. The explic it analytic solutions are obtained for a single crack in piezoelectri cs or on the interfaces of piezoele ctric bimaterials. A class of boun dary problems involving many crack s is also solved. For homogeneous materials it is found that the nor mal electric displacement D 2 , i nduced by the crack, is constant a long the crack faces which depend s only on the applied remote stres s field. Within the crack slit, th e electric fields induced by the c rack are also constant and not aff ected by the applied electric fiel d. For the bimaterials with real H, the normal electric di splacement D 2 is constant along the crack faces and electric field E 2 has the singularity ahead of the crack tip and has a jump acros s the interface.

以电位移法向分量及电势连续通过裂纹面为边界条件,对均匀压电材料的裂纹问题及两种不同压电材料界面裂纹问题进行了系统分析.得到了含中心裂纹无限大体封闭形式的全场解.证实了裂纹引起的非均匀扰动场只依赖于外加力场而与外加电场无关

 
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