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plasma glow discharge
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  “plasma glow discharge”译为未确定词的双语例句
     STUDY ON HEPARIN-MODIFICATION OF POLYURETHANE SUREACE THROUGH PLASMA GLOW DISCHARGE TECHNOLOGY
     利用等离子体表面接枝技术提高医用聚氨酯血液相容性的研究
短句来源
     Growth of TiN by Plasma Glow Discharge Sputtering,Diffusion and Ion Surface Alloying
     等离子体辉光溅射反应复合渗镀合成TiN的研究
短句来源
     Direct current hot cathode plasma glow discharge chemical vapor deposition (DC-HCPCVD) is a new method to deposit high quality diamond films with high growth rate.
     直流热阴极辉光放电等离子体化学气相沉积法是我们建立的快速沉积高品质金刚石膜的新方法。
短句来源
     This paper describes the polymerization of monomer containing fluorine by the low-temperature plasma glow discharge to produce the antireflective films which deposited on textured solar cells.
     采用低温等离子体辉光放电技术,用含氟有机单体在硅太阳电池表面聚合成膜。
短句来源
     Aiming at improving the hemocompatibility, heparin was selected on to be introduced on to the polyurethane surface. Method: Heparin was incorporated onto the polyurethane surface through a "spacer" utilizing plasma glow discharge technology. The surface chemistry and the contact-angle were measured, and the hemocompatibility evaluated through platelet adhesion tests.
     目的 :聚氨酯作为与血液接触的植入物和组织器官替代材料在心血管系统有重要而广泛的应用前景 ,本研究采用等离子体表面接枝技术 ,通过“空间桥梁”在聚氨酯材料表面引入具有抗凝血功能的肝素分子 ,对材料表面的微观化学组成、表面接触角等理化性能进行了测定分析 ,并通过测定血小板在材料表面的粘附数量 ,对改性表面的抗凝血性能做了评价。
短句来源
  相似匹配句对
     plasma;
     血浆游离DNA ;
短句来源
     Modification of Glow Plasma Nitriding Furnace
     辉光离子氮化炉的改造
短句来源
     Change of source cathode by double glow plasma
     双层辉光离子多元共渗中的源极变化
短句来源
     Investigation on Characteristic of Plasma Producedby D C Glow Discharge
     直流辉光放电等离子体特性研究
短句来源
     On the Distribution of Plasma Parameters in RF Glow Discharge
     射频辉光等离子体中的参量分布研究
短句来源
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  plasma glow discharge
1.Low-temperature plasma glow discharge can be used for siliciding and boriding.
      
Lactose-carrying styrene (VLA)-grafted polystyrene (PS) dish (PS-VLA) was prepared by treatment of PS dish with oxygen plasma glow discharge followed by the graft polymerization of VLA.
      
Grafting of lactose-carrying styrene onto polystrene dishes using plasma glow discharge and their interaction with hepatocytes
      
Sample capacitors were constructed with dielectrics obtained from completely fluorinated carbons which were polymerized in a plasma glow discharge.
      
Interaction of blood components with heparin-immobilized polyurethanes prepared by plasma glow discharge
      
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This paper describes the polymerization of monomer containing fluorine by the low-temperature plasma glow discharge to produce the antireflective films which deposited on textured solar cells. The reflective rates and photoelectrical character are measured. The effect of the films to the short circuit current the photoelectrical transform and the spectral response of the solar cells rised clearly. The reflective rates are fallen 2%, The resuts of X-ray analysis shows that films are amorphous. The dependence...

This paper describes the polymerization of monomer containing fluorine by the low-temperature plasma glow discharge to produce the antireflective films which deposited on textured solar cells. The reflective rates and photoelectrical character are measured. The effect of the films to the short circuit current the photoelectrical transform and the spectral response of the solar cells rised clearly. The reflective rates are fallen 2%, The resuts of X-ray analysis shows that films are amorphous. The dependence of the properties of films on the preparing condition are studied.

采用低温等离子体辉光放电技术,用含氟有机单体在硅太阳电池表面聚合成膜。测定膜的光电性能和反射率证实:有膜电池的短路电流、光电转换效率及光谱响应都有明显增加,反射率绝对值降低2%左右,膜为非晶结构。此外,还研究了成膜工艺因素和膜电池性能的关系。

rystallization of boron-doped silicon carbon alloy thin film materials has been prepared at low substrate temperature(M170℃)and small rf-power (<60mWcm-2) by plasma glow discharged method. A p-type microcrystallized silicon carbon alloy (μcSiC:B:H) thin films with high dark conductivity (σ ̄0.2cm-1) and optical band gap Eopt  ̄2.2eV were obtained. The key of crystallization is the control of H2 diluting ratio and doping level. In this paper. the results on tile detailed investigation of the doping effect,...

rystallization of boron-doped silicon carbon alloy thin film materials has been prepared at low substrate temperature(M170℃)and small rf-power (<60mWcm-2) by plasma glow discharged method. A p-type microcrystallized silicon carbon alloy (μcSiC:B:H) thin films with high dark conductivity (σ ̄0.2cm-1) and optical band gap Eopt  ̄2.2eV were obtained. The key of crystallization is the control of H2 diluting ratio and doping level. In this paper. the results on tile detailed investigation of the doping effect, photoelectronic characteristics and the influence of doping level on the structure of these materials are reported.

用等离子体射频辉光放电法,在低衬底温度(<170℃)、小rf功率(<60mWcm2)条件下,实现了硼掺杂硅碳合金薄膜材料的微晶化。获得了暗电导率σD~0.2scm-1、光带隙宽度Eopt~2.2eV的p型微晶氢化硅碳合金(μC-Si:B:H)薄膜。晶化的关键是H2稀释率和掺杂水平的控制。对该材料的掺杂效应、光电特性以及掺杂水平对材料结构的影响进行了详细研究。

Abstract Nanocrystalline silicon(nc-Si: H) films with an average grain size ranging from 2nm to 10nm were prepared by a plasma glow discharge CVD method. X-ray diffraction,High Resolution Electron Microscopy (HREM) were used to elucidate the structural nature in the nanocrystalline silicon films. The results show that the crystal lattice of the nanocrystalline silicon is a deformed diamond lattice. In the observed X-ray diffraction,there is an anomalous peak at 2θ=32. 5°of St besides the normal peaks...

Abstract Nanocrystalline silicon(nc-Si: H) films with an average grain size ranging from 2nm to 10nm were prepared by a plasma glow discharge CVD method. X-ray diffraction,High Resolution Electron Microscopy (HREM) were used to elucidate the structural nature in the nanocrystalline silicon films. The results show that the crystal lattice of the nanocrystalline silicon is a deformed diamond lattice. In the observed X-ray diffraction,there is an anomalous peak at 2θ=32. 5°of St besides the normal peaks at 2θ=28. 5°of Si(111) and 2θ=47. 3°of Si(220). The results of HREM show that a new crystallographic structure of silicon is found. The crystalline fraction of the network structure of silicon films increases with the increasing of RF power.EEACC: 0520, 2520F

在电容式耦合等离子体化学气相沉积系统中,使用高氢稀释硅烷为反应气体制备出了晶粒尺寸为2~10nm的纳米微晶相结构的硅薄膜,使用高分辨电子显微镜(HREM),X射线衍射谱(XRD),X射线光电子能谱(XPS)和红外光谱(IR)等结构分析手段检测了其结构特征.结果表明,纳米硅薄膜的晶格结构为畸变的金刚石结构.X射线衍射谱表明除了Si(111)的2θ=28.5°和Si(220)的2θ=47.3°处的衍射峰外,在2θ=32.5°处存在着一个强的异常峰.HREM结果表明存在新的Si结晶学结构与XRD异常峰相关联.研究结果还表明随着功率增加,Si薄膜网络结构的晶态成分增加.

 
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