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ion-matrix sheath
相关语句
  “ion-matrix sheath”译为未确定词的双语例句
     Profiles of Ion-matrix Sheath around Planar Dielectric
     平面介质靶周围离子体鞘的特征
短句来源
     Temporal Evolution in an Ion-matrix Sheath During Plasma Immersion Ion Implantation
     等离子体浸没离子注入(PIII)过程中初始离子阵鞘层尺度内各物理量的时空演化
短句来源
     When dielectric sheet (polymer, semiconductor and so on) supported by a metal electrode are implanted by means of Plasma Immersion Ion Implantation (PIII), the thickness and the potential profiles of ion-matrix sheath are studied.
     该文研究了在等离子体浸没离子注入(PIII) 中介质材料( 高聚物、半导体等) 为被注入对象时,其周围离子体鞘的扩展厚度和电势特征。
短句来源
     In conventional condition, the thickness and the dielectric constant of dielectric sheet have no significant effects on the thickness and the potential profiles of ion-matrix sheath.
     在常规应用中,薄膜型介质材料的厚度和相对介电常数对离子体鞘的厚度和离子集群势能分布及大小影响不大。
短句来源
  相似匹配句对
     ION BEEN OXIDATION
     离子束氧化
短句来源
     Ion Implantation in GaAs
     GaAs中的离子注入技术
短句来源
     Development of Ion-sulphurizing
     离子渗硫技术进展
短句来源
     The contrast was non - ion .
     增强扫描用非离子型造影剂。
短句来源
     Matrix Polymerization
     聚合新技术—模板(MatriX)聚合(Ⅰ)
短句来源
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In plasma source ion implantation (PSH),the workpiece to be treated is placed directly in the plasma,and successively pulse-biased to a high negative voltage at a definite duty cycle.With workpiece not being biased,the effect of the plasma on the workpiece is calculated and analyzed;and a simplified energe profile model of ions implanted into the workpiece is presented. Finally, the propagation of ion matrix sheath boundary during the negative pulse duration is calculated.This paper provides a referential...

In plasma source ion implantation (PSH),the workpiece to be treated is placed directly in the plasma,and successively pulse-biased to a high negative voltage at a definite duty cycle.With workpiece not being biased,the effect of the plasma on the workpiece is calculated and analyzed;and a simplified energe profile model of ions implanted into the workpiece is presented. Finally, the propagation of ion matrix sheath boundary during the negative pulse duration is calculated.This paper provides a referential foundation for the investigation and numerical simulation of PSII process.

在等离子体源离子注入(PSII)中,将待处理的工件直接放在等离子体内,并在工件上按一定的占空比加脉冲连续式负偏压。我们通过计算,分析了在工件未加负偏压时等离子体对工件的作用;并给出了在工件加上负偏压时注入工件的离子能量的简化分布模型。最后计算了在负偏压脉冲持续时间内离子阵鞘层边界的扩展。本文为研究和数值模拟PSII过程提供了参考依据。

A Monte-Carlo simulation model is developed to study the energy and angle di-stributions of ions striking the spherical target for high pressures of the neutral gas. The ion-neutral charge exchange and momentum-transfer cross sections that depend on the ion energy are taken into account precisely. The energy and angle distribu-tions of N+ ions at the spherical target during the sheath edge evolution after the ion matrix sheath for different pressures are investigated in detail.

建立了在球形靶鞘层中离子的蒙特-卡罗模拟模型,考虑了离子与中性粒子的电荷交换碰撞和弹性散射,以及精确依赖于入射离子能量的电荷交换碰撞截面和动量输运截面。模拟了不同气压下,在鞘层扩展过程中,氮离子N_2~+到达靶表面的能量分布和入射角分布,研究了它们的变化规律。

When dielectric sheet (polymer, semiconductor and so on) supported by a metal electrode are implanted by means of Plasma Immersion Ion Implantation (PIII), the thickness and the potential profiles of ion-matrix sheath are studied. In conventional condition, the thickness and the dielectric constant of dielectric sheet have no significant effects on the thickness and the potential profiles of ion-matrix sheath. Hence, we can conveniently combine PIII technique with equipment used for plasma treating,...

When dielectric sheet (polymer, semiconductor and so on) supported by a metal electrode are implanted by means of Plasma Immersion Ion Implantation (PIII), the thickness and the potential profiles of ion-matrix sheath are studied. In conventional condition, the thickness and the dielectric constant of dielectric sheet have no significant effects on the thickness and the potential profiles of ion-matrix sheath. Hence, we can conveniently combine PIII technique with equipment used for plasma treating, depositing, polymerizing, etching and so on.

该文研究了在等离子体浸没离子注入(PIII) 中介质材料( 高聚物、半导体等) 为被注入对象时,其周围离子体鞘的扩展厚度和电势特征。在常规应用中,薄膜型介质材料的厚度和相对介电常数对离子体鞘的厚度和离子集群势能分布及大小影响不大。因此在现有的等离子体处理、沉积、聚合、刻蚀等设备中都能方便地引入PIII方式

 
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