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led epitaxial
相关语句
  led外延片
     Study on the Back Lapping and Polishing of Sapphire-Based LED Epitaxial Wafers
     蓝宝石基LED外延片背减薄与抛光工艺研究
短句来源
     The protection effect on v volume source gas running-over, the storage effect on Ⅲ volume source gas shutting-off and the delaying, and the memory effect on Mg doped in AIGaInP LED epitaxial layer grown by MOCVD are discussed.
     详细分析了 MOCVD AIGaInP LED外延片中 V族源的空流保护作用、Ⅲ族源的存储效应以及 Mg掺杂的延迟和记忆效应。
短句来源
     The source gas switch procedure is designed, and it is reasonable, practical, and useful for growing AlGaInP LED epitaxial layer with abrupt heterointerface, and without wide bandgap sandwich.
     设计出了合理实用的源气开关程序,它有利于生长无定带隙夹层、突变异质结界面的AIGaInP LED外延片
短句来源
     LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency.
     LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。
短句来源
  led外延
     Effect of δ-Doping on Performance of GaN Blue LED Epitaxial Films on Si Substrates
     δ掺杂对Si衬底GaN蓝光LED外延膜性能的影响研究
短句来源
     The protection effect on v volume source gas running-over, the storage effect on Ⅲ volume source gas shutting-off and the delaying, and the memory effect on Mg doped in AIGaInP LED epitaxial layer grown by MOCVD are discussed.
     详细分析了 MOCVD AIGaInP LED外延片中 V族源的空流保护作用、Ⅲ族源的存储效应以及 Mg掺杂的延迟和记忆效应。
短句来源
     Study on the Back Lapping and Polishing of Sapphire-Based LED Epitaxial Wafers
     蓝宝石基LED外延片背减薄与抛光工艺研究
短句来源
     LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency.
     LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。
短句来源
     The factors that take effect on the controlling accuracy are analyzed, combining software and hardware approaches for pressure stability and gas switching undisturbed are introduced, such as close-loop pressure controlling, difference pressure controlling, accurate flux measuring and controlling and compensating gas line design, so that high quality MQW blue LED epitaxial material is grown initially on domestic plant-size GaN MOCVD system (6片机).
     分析了影响压力控制精度的主要因素,介绍了采用软件、硬件结合的方法,通过闭环压力控制、差压控制、高精度流量控制和补偿气路设计等技术手段,实现高精度压力稳定性和无扰动气体切换,首次在国产生产型GaN-MOCVD(6片机)设备上生长出高质量的多量子阱蓝光LED外延材料。
短句来源
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  “led epitaxial”译为未确定词的双语例句
     Study of GaP:ZnO LED epitaxial layer by microscopical optical method
     用微区光学方法研究GaP:ZnO红光外延片
短句来源
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In 1999,National Advanced Materials Committee of China(NAMCC) took a series of speical measure,through midterm evaluation of whole projects,stressed focus and fixed on main targets,strengthened innovation and promoted energetically industrialization of research fruits. Remarkable progress have been made in following areas : metal-hydride batteries and related materials,lithium-ton batteries and related materials,power battery for electric vehicle,nultilayer chip electronic components , high-performance rare-earch...

In 1999,National Advanced Materials Committee of China(NAMCC) took a series of speical measure,through midterm evaluation of whole projects,stressed focus and fixed on main targets,strengthened innovation and promoted energetically industrialization of research fruits. Remarkable progress have been made in following areas : metal-hydride batteries and related materials,lithium-ton batteries and related materials,power battery for electric vehicle,nultilayer chip electronic components , high-performance rare-earch Nb-Fe-B magnate,LED epitaxial materials,synthetic crystals and all-solid-state lasers, diamond film,organic photo-conductor drums and structure design of rare-earth compounds. Some of them are being industrialized This paper gives a brief review of progress in above-mentioned area.

1999年,新材料领域采取了一系列措施,在对全部课题进行中期评估的基础上,切实突出重点,确定了目标成果,加强了科技创新并大力推进了成果的产业化进程。镍氢电池、锂离子电池和电动车用动力电池及其主要原材料,片式电子元器件及其高性能瓷料,高性能钕铁硼材料及应用,LED外延材料,人工晶体和全固态激光器,金刚石膜的生长及应用,有机光导鼓(OPC)以及稀土化合物结构设计等方面都取得了显著进展,部分项目走向了产业化,为2000年全面完成计划任务打下了基础。

The protection effect on v volume source gas running-over, the storage effect on Ⅲ volume source gas shutting-off and the delaying, and the memory effect on Mg doped in AIGaInP LED epitaxial layer grown by MOCVD are discussed. The source gas switch procedure is designed, and it is reasonable, practical, and useful for growing AlGaInP LED epitaxial layer with abrupt heterointerface, and without wide bandgap sandwich.

详细分析了 MOCVD AIGaInP LED外延片中 V族源的空流保护作用、Ⅲ族源的存储效应以及 Mg掺杂的延迟和记忆效应。设计出了合理实用的源气开关程序,它有利于生长无定带隙夹层、突变异质结界面的AIGaInP LED外延片。

The external quantum efficiency of(A1xGa1-x)0.5In0.5P light emitting diodes (LED) grown on GaAs substrate by lattice matching is limited by the absorptivity of the GaAs substrate. LED wafer bonding, the attachment of LED epitaxial wafer to another substrate such as GaP transparent substrate, metal mirror substrate or sapphire substrate, increases the light emitting efficiency. The device fabrication and device characteristics of 3 types of wafer bonding are described.

(Al_xGa_(1-x))_(0.5)In_(0.5)P高亮度发光二极管是在GaAs衬底上匹配外延的,它的外量子效率受限于吸收光线的GaAs衬底。LED晶片键合技术可以把LED外延片和GaP透明衬底、金属镜面衬底或蓝宝石衬底结合以提高出光效率。本文对上述三种晶片键合的器件制备过程和器件特点进行了描述。

 
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