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metal semiconductor interaction
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  相似匹配句对
     Noise Characteristic in Metal-Semiconductor Contacts
     金属/半导体接触孔噪声特性研究
短句来源
     THE ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR LUCS
     金属-半导体多层超薄共格结构(LUCS)的电子结构
短句来源
     SPECIAL METAL
     另类金属
短句来源
     TIMES OF THE METAL
     金属时代
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     Semiconductor Arrester
     半导体放电管
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To attempt to get more evidence of the structural interaction of Pt and TiO2, morphology of Pt/TiO2 surface was studied by using transmission electron microscope (TEM) technique. Originally Pt was photodeposited on TiO2 powder as irregular 20-40A microparticles highly dispersed on surface. Upon heating the Pt/TiO2 catalyst at 600-700℃ in H2 atmosphere, the highly dispersed Pt was found to be transformed into polygonal particles. The emergence of "butterfly" pattern in the dark field TEM picture demonstrated...

To attempt to get more evidence of the structural interaction of Pt and TiO2, morphology of Pt/TiO2 surface was studied by using transmission electron microscope (TEM) technique. Originally Pt was photodeposited on TiO2 powder as irregular 20-40A microparticles highly dispersed on surface. Upon heating the Pt/TiO2 catalyst at 600-700℃ in H2 atmosphere, the highly dispersed Pt was found to be transformed into polygonal particles. The emergence of "butterfly" pattern in the dark field TEM picture demonstrated further that the polygonal Pt particles possessed actually epitaxial multiplane structure.The pictures of a Pt/TiO2 sample treated in H2 stepwise at 200, 400,600 and 850℃ showed clearly that the micro Pt particles migrated, aggregated and then turned into the crystalline form progressively. Contrasting with the results obtained in N2 atmosphere, it was ascertained that the treatment in H2 at elevated temperature is a paramount condition for inducing structural changes. The appearance of n-TiO2 defect in the vicinity of Pt and TiO2 contacting point was believed to be the direct cause of epitaxial growth of Pt microparticles.A possible explanation was given for the observed morphological phenomena by the postulation of Metal-Semiconductor Interaction for the Pt/TiO2 system.

用透射电镜(TEM)技术研究了Pt/TiO_2催化剂的表面形貌。经高温下氢处理的Pt/TiO_2,表面上原来高分散的不规则的Pt微粒发生迁移并构成多边形粒子。暗场TEM照片上的“蝶”形图象说明多边构形实际是外延生长的Pt多面体微晶。确定了在氢气氛中加热是造成TiO_2半导体表面缺陷,并导致Pt粒子规整构形的重要条件。还发现Pt/TiO_2的表面微观形貌和催化性能之间有并行关系。用金属-半导体相互作用的观点可以合理地解释这些结果。

The surface properties of Pt/TiO2 was found to be alterable effectively upon high temperature hydrogen treatment, thus, the catalytic activity of Pt/TiO2 for the liquid phase photoreaction of CO and H2O could be obviously improved.The influence of the change of surface properties of Pt/TiO2 on the electron transfer process across the solid-liquid interface has been studied by dynamic potential sweeping method. As a result of high temperature hydrogen treatment, the SMScI (strong metal-semiconductor...

The surface properties of Pt/TiO2 was found to be alterable effectively upon high temperature hydrogen treatment, thus, the catalytic activity of Pt/TiO2 for the liquid phase photoreaction of CO and H2O could be obviously improved.The influence of the change of surface properties of Pt/TiO2 on the electron transfer process across the solid-liquid interface has been studied by dynamic potential sweeping method. As a result of high temperature hydrogen treatment, the SMScI (strong metal-semiconductor interaction) between Pt and TiO2 took place, for the strongly interacted sample, the electronic contact between Pt and TiO2 was gradually changed from "Schottky" into "Ohmic" nature, and the surface property of Pt/TiO2 was altered. And therefore, additional new surface states were produced, the energy barrier at Pt/TiO2 interface was diminished, and more effective tunnels were developed, thereby speeding up the electron transfer process across the solid-liquid interface and improving the photocatalytic activity of Pt/TiO2 for the liquid phase reaction of CO and H2O. The change of the surface property of Pt/TiO2 could bring about the direct charge transfer between CO and Pt/TiO2 photoelectrode.

发现了高温氢后处理能有效地改变Pt/TiO_2的表面性质,明显地提高了它对CO+H_2O液相光反应的性能。为此,用动电位扫描法研究了Pt/TiO_2表面性质的变化对固-液界面电荷传递过程的影响。结果表明,经高温氢处理后所产生的Pt—TiO_2之间的强相互作用引起了Pt-TiO_2接触特性和Pt/Ti0_2催化剂表面性质的改变,从而加速了固-液界面电荷传递过程,提高了Pt/TiO_2对CO+H_2O液相光反应的性能。还观察到Pt/TiO_2表面性质的改变可导致CO和Pt/TiO_2光电极之间电荷的直接交换。

Influence of the additions of different type semiconductor oxides to Ni-based catalyst on the characteristics of carbon deposition of CH_4,C_2H_6 and C_2H_4 cracking was studied by using pulse microreaction technique.It was discovered that,the addition of n-type semiconductor CeO_2 to Ni catalyst would decrease carbon deposition activity of CH4 and C_2H_6 cracking,whereas the addition of p-type semiconductor Co_3O_4 would increase carbon deposition activity of CH_4 and C_2H_6 cracking.On the...

Influence of the additions of different type semiconductor oxides to Ni-based catalyst on the characteristics of carbon deposition of CH_4,C_2H_6 and C_2H_4 cracking was studied by using pulse microreaction technique.It was discovered that,the addition of n-type semiconductor CeO_2 to Ni catalyst would decrease carbon deposition activity of CH4 and C_2H_6 cracking,whereas the addition of p-type semiconductor Co_3O_4 would increase carbon deposition activity of CH_4 and C_2H_6 cracking.On the other hand,the effect of semiconductor oxide additives on the characteristics of carbon deposition of C_2H_4 cracking is opposite to that of CH_4 and C_2H_6 due to the different activated mechanism.XPS results reveal that there is a metal-semiconductor interaction (MScI) between active metal Ni and semiconductor oxide,which is the most important factor leads to the above phenomenon.

采用脉冲微反技术研究了添加半导体氧化物对Ni基催化剂上CH_4、C_2H_6和C_2H_4的裂解积炭反应特性的影响。结果表明,n型半导体CeO_2的添加降低了CH_4和C_2H_6的积炭活性,而p型半导体Co_3O_4的添加则加速CH_4和C_2H_6的裂解积炭;而对于与CH4和C_2H_6活化机制不同的C_2H_4分子的活化,上述影响机制正好相反,n型半导体CeO_2的添加促进C_2H_4的裂解积炭反应,而p型半导体Co_3O_4的添加则抑制C_2H_4的裂解积炭反应。XPS分析表明,活性金属Ni与半导体氧化物之间存在的金属-半导体相互作用是这种影响机制的主要因素。

 
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