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determination of impurities
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  “determination of impurities”译为未确定词的双语例句
     Simultaneous determination of impurities Co,Cu,Cr,Fe and Nb in TiNi shape memory alloy by ICP-AES
     ICP-AES法同时测定TiNi形状记忆合金中杂质Co、Cu、Cr、Fe、Nb
短句来源
     Separation and determination of impurities in high purity BBr_3 and POCl_3
     高纯BBr_3、POCl_3基体中杂质的分离和测定
短句来源
     Study on the determination of impurities elements of Sb,Cu,Sn,Si and P in ferromolybenum by ICP-MS
     ICP-MS法测定钼铁中Sb,Cu,Sn,Si,P元素的研究
短句来源
     ICP-AES was used for the direct determination of impurities i.e.Cr,Cd,Sn,Ba,Mn,Fe,Zn,Ti,Cu,Co,Ni,Mg in aluminium-silicon alloy.
     用ICP AES法直接测定铝硅合金中Cr,Cd,Sn,Ba,Mn,Fe,Zn,Ti,Cu,Co,Ni,Mg诸杂质元素。
短句来源
     Determination of Impurities in Y_2O_3 Nanopowder by Inductive Coupling Plasma Emission Spectrometry
     电感耦合等离子体发射光谱法直接测定纳米Y_2O_3中的杂质含量
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  相似匹配句对
     Determination of impurities in EMD
     电池用电解二氧化锰中杂质的测定
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     Determination of racecadotril and its impurities by HPLC
     HPLC测定消旋卡多曲的含量及杂质
短句来源
     Determination of Mizolastine and its impurities by HPLC
     HPLC法测定咪唑斯汀含量及其有关物质的方法学研究
短句来源
     DETERMINATION OF IMPURITIES IN ANALGIN BY HPLC
     高效液相色谱测定安乃近杂质
短句来源
     DETERMINATION OF THE IMPURITIES IN ALUMINA BY AAS
     原子吸收法分析氧化铝中杂质
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  determination of impurities
Gas-chromatographic determination of impurities in acrylic acid
      
Gas-chromatographic determination of impurities in butyl methacrylate
      
Synthesis, identification and determination of impurities in bioactive hydroxyapatite
      
Identification and quantitative determination of impurities in halodif by spectroscopic and HPLC techniques
      
Determination of impurities in technical phenobarbital by the methods of mass spectrometry and IR spectroscopy
      
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A new method for determination of electrical parameters in Silicon chip and MOS properties by the constant current transient technique is described. The MOS structure is maintained in the different transient states by the change of the displa-cement current, therefore a rapid determination of electrical parameters (conductivity type, impurity concentration, minority carrier lifetime and surface avalanche break-down) in Silicon chip and properties (SiO2 thickness, flat-band Voltage and factor...

A new method for determination of electrical parameters in Silicon chip and MOS properties by the constant current transient technique is described. The MOS structure is maintained in the different transient states by the change of the displa-cement current, therefore a rapid determination of electrical parameters (conductivity type, impurity concentration, minority carrier lifetime and surface avalanche break-down) in Silicon chip and properties (SiO2 thickness, flat-band Voltage and factor a) of the MOS structure are completed. High precision of determination of impurity concentration will be expected because the impurity concentration is independent of the SiO2 thickness. The determination of the conductivity type of Silicon chip is a direct result of determining impurity concentration, so that the Special checks of the conductivity type of Silicon chip are not needed. After a series of intuitive and continuous observation of the surface avalanche breakdown of Silicon chip, It has been found that a kind of characteristics of the breakdown capacity of the Nonequi-librium MOS structure, distinguished from the traditional result.Other parameters can be rapidly and simply measured by transient technique, too.

本文提出了利用恒流瞬态技术测量硅片电学参数及MOS特性的新方法。改变位移电流的大小,使MOS结构处于不同瞬态,从而完成硅片电学参数(电导型号,掺杂浓度,少子寿命及雪崩击穿)和MOS特性(SiO_2厚度,平带电压及a系数)的快速测量。由于所测之杂质浓度与SiO_2厚度无关,可望浓度测量的精度会高些。电导型号的确定是杂质浓度测量的自然结果,而无需特别检查硅片的电导型号。对硅片雪崩击穿现象进行了直观和连续的观察,并且,发现了一种与传统观察结果不一样的MOS结构非稳态电容击穿特性。其他参数均可用瞬态技术简捷地进行测量。

In this paper, the effect of concentrated salt matrix elements on the atom and ion line intensity of Co, Ni, Sn, Cr, Ti and V has been investigated by using a LB type pneumatic nebulizer of bugle form. Results of the experiment show that some matrix elements of concentration 20—30mg/ml less effect the spectra-line intensity of most determined elements. Therefore, apply of this nebulizer provided a new way for determination of impurities in concentrated salt matrix by ICP-AES.

本文利用LB喇叭型气动雾化器、研究浓盐基体元素对钴,镍、锡、铬、钛、钒原子及离子谱线强度的影响。实验表明,某些基体元素浓度为20—30毫克/毫升时,对多数待测元素谱线强度影响不大。因而,此种雾化器为ICP-AES分析浓盐基体中杂质提供了好的途径。

In this article, various methods for determination of impurities in high-purity indium, including spectrographic analysis, polarographic analysis, spectrophotometry, activity analysis, mass spectrometry, atomic absorptions pectrophotometry and gas analysis etc., in the period from 1957 to 1986, are reviewed. There are 117 references cited

介绍了从1957到1986年间国内外有关高纯铟中杂质的分析方法,包括光谱分析、极谱分析、分光光度分析、活化分析、质谱分析、原子吸收光谱分析及气体分析等方法。参考文献117篇。

 
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