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resistor film
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  电阻膜
     Thick film heater is a new type of electric heater, which made a piece of stainless steel to be a heater by using the most advanced thick film technology in the world, directly printing and firing insulation and heating resistor film on stainless steel, people can directly heat water or toast food on thick film heater.
     不锈钢厚膜加热器件是一种新型的电加热器件,它采用当今世界上最先进的厚膜技术,通过丝网印刷和烧结的方式,将绝缘膜和加热电阻膜直接印刷和烧结在不锈钢板上面,将不锈钢板做成一块加热器件,人们可以直接在这个加热器件上烧水或煎烤事物。
短句来源
  电阻薄膜
     The key to acquire the high-quality resistor film, the lead film, the mediumfilm and upper-down electrode film is to adopt high-purity materials andhigh vacuum, to control evaporatning and splitting rate.
     指出获得高质量的电阻薄膜、接角薄C、介质薄膜和上下电极薄膜的关键是采用高纯度的材料,高的真空度和控制好蒸发、溅射速率。
短句来源
  “resistor film”译为未确定词的双语例句
     A high-precision and high reliable HIC thin film resistor film forming substrate with two sheet resistances structure is fabricated through experiments and reliability tests.
     通过实验及可靠性考核,制出了高精度、高可靠性的具有双方阻结构的混合集成电路薄膜电阻成膜基片。
  相似匹配句对
     The Study on Ni Thin Film Thermal Resistor
     Ni薄膜热敏电阻的研究
短句来源
     Study on surface protection of film platinum resistor
     铂薄膜电阻器件表面保护的研究
短句来源
     Palestinian Film
     巴勒斯坦电影
短句来源
     THE JOURNEY OF FILM
     胶片的旅程
短句来源
     Selection of the sliding Resistor
     滑线变阻器的选择
短句来源
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  resistor film
The results indicate that the dissipation density at the corner of the contact between the lead and the resistor film/foil reaches infinity.
      


The design and fabrication processes for the Ni-Cr, Cr-SiO and Tafilm resistor and SiO, Ta2O5 film capacitors are described in this paper.The key to acquire the high-quality resistor film, the lead film, the mediumfilm and upper-down electrode film is to adopt high-purity materials andhigh vacuum, to control evaporatning and splitting rate.The experimental results of the concrete product is given in the pape, in which the good characteristics of the film resistor and capacitor are...

The design and fabrication processes for the Ni-Cr, Cr-SiO and Tafilm resistor and SiO, Ta2O5 film capacitors are described in this paper.The key to acquire the high-quality resistor film, the lead film, the mediumfilm and upper-down electrode film is to adopt high-purity materials andhigh vacuum, to control evaporatning and splitting rate.The experimental results of the concrete product is given in the pape, in which the good characteristics of the film resistor and capacitor are found.

本文阐述了Ni-Cr、Cr-SiO、Ta薄膜电阻和SiO、Ta_2O_5薄膜电容的设计与制造方法。指出获得高质量的电阻薄膜、接角薄C、介质薄膜和上下电极薄膜的关键是采用高纯度的材料,高的真空度和控制好蒸发、溅射速率。 本文还给出了对具体产品的试验结果,从中可以看出薄膜电阻和电容电特性的优良品质。

The Induction Electromotive force type velocity detector (IEVD) can directly detect velocity with high resolution, without contact on an object. The IEVD detects electromotive force in proportion to velocity from the pararell electrodes on beltshape resistor film.

感应电势型速度检出器(IEVD)以较高的精度直接检测,对测定对象无接触,故对测定对象的移动不产生影响。本检出器能从带状电阻膜片两电极上检测出与速度成比例的感应电势。

Electrical and thermal properties of Ta -N /Cu film on the Si substrate we re investigated.Results show that Ta -N resistance almost does not change when annealing t emperature is lower than500 0 C.The decrease of resistance for Ta -N /Cu film annealed from 6000 C to 690 0 C is induced by oxidation of Ta -N and diffusion,whi le the increase of resistance for Ta -N /Cu film annealed at temperature higher than 690 0 C is attributed to the lost of the tran sportation ability of Cu line.The...

Electrical and thermal properties of Ta -N /Cu film on the Si substrate we re investigated.Results show that Ta -N resistance almost does not change when annealing t emperature is lower than500 0 C.The decrease of resistance for Ta -N /Cu film annealed from 6000 C to 690 0 C is induced by oxidation of Ta -N and diffusion,whi le the increase of resistance for Ta -N /Cu film annealed at temperature higher than 690 0 C is attributed to the lost of the tran sportation ability of Cu line.The study will benefit the fabrication o f Cu line and resistor film in very large scale integrating circuit(VLSI ).

对Si衬底上Ta-N/Cu薄膜进行了电学和热学分析,结果发现5000C以下薄膜电阻几乎不变,600~6900C下的退火引起的电阻率降低是由于Ta-N电阻的热氧化和Cu熔化扩散引起的,而6900C以上的电阻率增加是由于Cu引线传输能力减弱所致。为0.18μm以下的超大规模集成电路中的Cu引线和电阻薄膜的制作提供了有益的借鉴。

 
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