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metal semiconductor transition
相关语句
  金属半导体转变温度
     The samples showed a metal semiconductor transition at 270K, which was close to their Curie temperature, T C , 280K.
     材料的居里温度(TC)为280K,其金属半导体转变温度(Tp) 为270K,接近于TC。 外加磁场下的磁电阻(MR) 峰值温度与Tp 十分接近。
短句来源
  “metal semiconductor transition”译为未确定词的双语例句
     The temperature of metal semiconductor transition, T _ tran, decreases, and the peak value of resistance increases with increasing Ca vacancies. The temperature dependence of the resistance above metal-semiconductor transition temperature is simulated based on the polaron-resistance model.
     材料的金属 -半导体转换峰值温度 Ttran随 Ca缺位程度的增加相应减小而电阻峰值却增大 ,作者用极化子电阻模型拟合了金属 -半导体转换峰温度 Ttran以上的电阻温度依赖关系 ,发现 Ca缺位材料电阻的增大可能与局域波函数的衰减长度减小有关。
短句来源
  相似匹配句对
     Noise Characteristic in Metal-Semiconductor Contacts
     金属/半导体接触孔噪声特性研究
短句来源
     THE ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR LUCS
     金属-半导体多层超薄共格结构(LUCS)的电子结构
短句来源
     METAL-SEMICONDUCTOR"TRANSITION OF METAL PHTHALOCYANINE POLYCRYSTALLINE
     金属酞菁化合物多晶体的“金属—半导”性转变
短句来源
     The metal-semiconductor transition could be explained by overlapping band.
     样品的金属-半导体转变可用交叠能带解释.
短句来源
     SPECIAL METAL
     另类金属
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  metal semiconductor transition
As CB approaches the metal-semiconductor transition, the low-temperature resistivity limit 0 changes very rapidly.
      


The temperature dependence of resistance, a.c. susceptibility, specific heat, XPS and X-ray diffraction were measured respectively both in single-phase Ba_2YCu_3O_(9-δ) and multi-phase Ba_xY_(1-x)CuO_(3-y) samples with different compositions prepared at various sintering conditions. The experimental results support such a view that a bulk superconductivity exists in these compounds. We also found the Ba_2YCu_3O_(9-δ)phase plays an important part in the superconductivity of the multi-phase samples, and the high...

The temperature dependence of resistance, a.c. susceptibility, specific heat, XPS and X-ray diffraction were measured respectively both in single-phase Ba_2YCu_3O_(9-δ) and multi-phase Ba_xY_(1-x)CuO_(3-y) samples with different compositions prepared at various sintering conditions. The experimental results support such a view that a bulk superconductivity exists in these compounds. We also found the Ba_2YCu_3O_(9-δ)phase plays an important part in the superconductivity of the multi-phase samples, and the high density of electronic state at Fermi level is usually associated with the high Tc. But only 0.5% (x=0.005) content of Ba still leads to high Tc superconductivity which should not attribute to the interface. As a result, we may not rule out the possibility that Ba atom acts as an impurity to affect the electronic structure, thus leading to supercoductivity. It has also been observed that the M-S (Metal-Semiconductor) transition, which might be driven by the electrons, occurs near x=0.

对不同组分及烧结条件下的Ba_xY_(1-x)CuO_(3-y)多相和Ba_2YCu_3O_(9-δ)单相超导氧化物分别作了电阻、交流磁化率和比热随温度的变化,以及X射线衍射、X射线光电子谱的测量。结果支持样品中存在大块超导电性的观点,其中对超导起主要作用的是Ba_2YCu_3O(9-δ)相。并且对于较高Tc的样品具有较大的Fermi面态密度。但含Ba量仅为0.5%(x= 0.005)的样品仍可导致非界面的高温超导电性。因此不能排除Ba以杂质原子身份影响电子结构,从而导致超导电性的可能性。另外,在x=0处观察到可能由电子推动的金属-半导体相变。

The measurements of X-ray diffraction, d.c. resistance versus temperature and Hall coefficients at low temperature have been performed forYBa2Cu3-xMxOy systems. (x = 0.00, 0.025,0.05,0.075,0.10,0.125,0.15,0.20,0.25,0.275,0.30,0.325,0.35,0.375,0.40 for M = Co; x=0.025,0.05,0.075,0.10,0.15,0.20,0.30 for M = Zn)The crystallographic data show that an orthorhombic-tetragonal phase transition takes place as Co content increases, while the crystal structure exhibit drastic changes with Zn content. The measurement...

The measurements of X-ray diffraction, d.c. resistance versus temperature and Hall coefficients at low temperature have been performed forYBa2Cu3-xMxOy systems. (x = 0.00, 0.025,0.05,0.075,0.10,0.125,0.15,0.20,0.25,0.275,0.30,0.325,0.35,0.375,0.40 for M = Co; x=0.025,0.05,0.075,0.10,0.15,0.20,0.30 for M = Zn)The crystallographic data show that an orthorhombic-tetragonal phase transition takes place as Co content increases, while the crystal structure exhibit drastic changes with Zn content. The measurement of resistances indicates that a metal-semiconductor transition occurs at certain x for Co dopant hut not found for Zn dopant. The hole carrier concentration raduces with Co content monotoneous-iy but varies nonmonotoneously with Zn content, giving a maximum at about x= 0.15 The concepts of localization and acceptor are used to explain these phenomena. The suppression of Tc for both systems is discussed with various possible suppression mechanisms.

对单相掺杂样品YBa_2Cu_3 x~(Co_xO_y)(x=0.00,0.025,0.05,0.075,0.10,0.125,0.15,0.20,0.25,O.275,0.30,0.325,0.35,0.375,0.40)和YBa_2Cu_(3-x)Zn_xO_y(x=O.025,0.05,0.075,0.10,0.15,0.20,0.30)作了室温下的晶体结构,正常态时电阻-温度关系,以及低温下的Hall系数的测量,随着杂质含量的增加发现:1)掺Co样品显示出一从正交到四方的连续的结构转变,而掺Zn样品只有在较大的Zn含量时才开始出现此结构转变的趋势;2)掺Co样品呈现出金属-半导体转变,但所有被测的单相掺Zn样品则呈现出金属性行为;3)掺Co样品的空穴载流子浓度单调下降,而掺Zn样品的则在x=0.15处出现一极大值。用局域化的能带图象以及受主杂质的概念对实验现象作了解释,并对各种可能的拆对机制作了讨论。

Y-Ba-Cu-O films have been prepared by Ohm heating co-evaporation.The metal-semiconductor transition induced by the components,heat treatment temperatures and the rate of dropping temperature has been observed and the effects on superconductivity have been investigated.Y-Ba-Cu-O superconducting films with zero resistance above liquid nitrogen have been obtained.The onset superconducting Tc is 98K,The mid-point Tc is 84K and zero resistance Tc is 78.6K.

利用欧姆加热三元共蒸的方法制备了 Y-Ba-Cu-O 薄膜.研究了组分、热处理温度和降温速度诱导的金属-半导体转变及其对超导电性的影响.在这些研究的基础上,第一次利用欧姆加热三元共蒸方法获得了零电阻温度超过液氮温度的 Y-Ba-Cu-O 超导薄膜.其起始超导 T_c为98K,零电阻超导 T_c 为78.6K,中点超导 T_c 为84K,△T_c 为12K.

 
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