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pressure dependent
相关语句
  压力有关
     FEASIBILITY ANALYSIS OF USING PRESSURE DEPENDENT VAV TERMINAL
     使用压力有关型变风量末端装置的分析
短句来源
     The coefficients in these equations are pressure dependent, which caused difficulties in the numrical solutions.
     由于方程中的系数与压力有关,这也使得数值求解有困难。
短句来源
     Analyzes the time constant effect of room temperature sensor of the terminal on the VAV system by simulation. The results show that we can use pressure dependent VAV terminal to get satisfied control results approximately if the time constant of room temperature sensor is less than 30 second.
     通过模拟 ,分析了变风量末端测量室温的时间常数对变风量系统的影响 ,结果显示如果变风量末端测量室温的时间常数在 30秒以内 ,那么可以在变风量系统中使用压力有关的变风量末端。
短句来源
     By decline the time constant of the room temperature sensor of the terminal, we can use pressure dependent terminal to cut down the cost of the VAV system.
     所以通过降低变风量末端测量室温的时间常数 ,就可以在变风量系统中采用压力有关的末端以降低整个变风量系统的造价。
短句来源
  压力改变
     It was found that the cationic dye in monolayers with arachidic acid showed a surface pressure dependent equilibrium between dimers and J-aggregate.
     从实验结果得出:带正电荷的染料与花生酸混合形成单分子膜后,膜中染料的二聚体与J-聚集体随着表面压力改变存在着一个平衡。
短句来源
  压力有关型
     FEASIBILITY ANALYSIS OF USING PRESSURE DEPENDENT VAV TERMINAL
     使用压力有关型变风量末端装置的分析
短句来源
  “pressure dependent”译为未确定词的双语例句
     EGTA was a pressure dependent inhibitor of Ca~(2+),so the origin of Ca~(2+) also might be a pressure dependent channels.
     EGTA是一种质膜上电压依赖型(L型)Ca~(2+)通道抑制剂,所以三尖杉叶片质膜上的Ca~(2+)通道为电压依赖型Ca~(2+)通道,同时也说明在低温胁迫过程中,细胞内钙离子浓度变化是传递低温信息的前期信号。
短句来源
     Temperature and pressure dependent center shift ( δ CS ) data of 57 Fe in some chain silicates were analyzed to Debye approximation using the Debye characteristic temperature as an adjustable parameter.
     以德拜特性温度为可调参量 ,用德拜理论近似分析了某些链状硅酸盐矿物在不同温度、压力下的 57Fe中心移 (δCS)数据。
短句来源
     The experimental results show that v_P and Q_P are pressure dependent and a greater rising rate at the lower pressures than that at higher pressures: the increase rate of Q_p at 0.4~2.4 GPa is 358.5%,while only 7.6% at 2.4~4.0 GPa.
     纯橄岩的品质因子值呈两段式线性变化:从低压区间到高压区间品质因子值的增大幅度明显变小(0.4~2.4 GPa压力范围内QP增大了358.5%,2.4~4.0 GPa压力范围内QP仅升高了7.6%)。
短句来源
     Blood Pressure dependent Effects of Different Antihypertensive Drugs on Regression of Left Ventricular Hypertrophy in Spontaneously Hypertensive Rats
     抗高血压药物对自发性高血压大鼠降压及逆转左室肥厚作用
短句来源
     From the observation of the pore size distribution by low-field NMR relaxation time spectrometry the mechanisms of pressure dependent porosity and permeability change can be derived.
     随着地层压力的升高,岩心孔隙度,孔径分布和渗透率逐渐恢复,但不能达到原始值。 其中裂缝性岩心孔隙度和渗透率的恢复率明显低于基质性岩心。
短句来源
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  pressure dependent
Vonnegut's spraying fountain-an oxygen-pressure dependent chemical process
      
Temperature and pressure dependent crack densities for Delegate aplite have been estimated by comparison of the observed shear moduli with those expected for a crack-free aggregate.
      
A cap-type pressure dependent constitutive equation was implemented in the model to simulate the powder behavior.
      
On the other hand, in the case of the CO + NO reaction on Pd(111), the pressure dependent formation of isocyanate containing species' was observed.
      
Promotion in ammonia synthesis: A pressure dependent phenomenon
      
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Until now,a semi-empirical formula S=K(I/P) is widely used to express the pumping speed of a sputtering ion pump. The constant K is decided by experiments. An attempt is made to find this constant by the Schuurman' s theory of magnetic confined gas discharge Lindhard's expression for atomic collision cross section introduced by Sigmund to the theory of sputtering, and the Langmuir's theory of adsorption.It is found that K may be expressed as K=4.9×10~(-3) fU_a(1/4) (g+2-~(g~2+4g)(1/2) ), for nitrogen at room...

Until now,a semi-empirical formula S=K(I/P) is widely used to express the pumping speed of a sputtering ion pump. The constant K is decided by experiments. An attempt is made to find this constant by the Schuurman' s theory of magnetic confined gas discharge Lindhard's expression for atomic collision cross section introduced by Sigmund to the theory of sputtering, and the Langmuir's theory of adsorption.It is found that K may be expressed as K=4.9×10~(-3) fU_a(1/4) (g+2-~(g~2+4g)(1/2) ), for nitrogen at room temperature in a diode pump,where c is a configuration factor, f is a pressure-dependent factor,u is a anode voltage. g=2.45×10~(-3)cfU_a(1/4)/PA, Where A is the area of the inner surface of the anode.This relation is agreed with experimental results fairwell.

至今,溅射离子泵的抽速用半经验公式S=K(I/P)表示,其常数K由实验确定。本文沿用Schuurman的磁约束气体放电理论,结合Sigmund援引Lindhard的原子碰撞公式所建立的溅射理论,并根据Langmuir的吸附理论,尝试从理论上求得二极型离子泵室温下对氮气抽速公式中常数X的表达式为;K=4.9×10~(-3)cfU_a~(1/4)(g+2-(g~2+4g)~(1/g~(2+4g)))。其中,常数c与泵的结构有关;函数f取决于压强;U_a为阳极电压;g=2.45×10~(-3)cfU_a~(1/4)I/PA。而A为阳极内表面面积。此关系式与实验结果比较相符。

It has been well known that localized electronic states in semiconductorsare closely related to the electronic band structure. In fact, exploration of the interrelation between localized electronic states and the band structure represents a basic aspect of the electronic theory of semiconductors. The photoluminescence under high pressure provide an important means for investigating this interrelation. The pressure behaviours of N and NNi traps as well as some other shallow states in GaP have been...

It has been well known that localized electronic states in semiconductorsare closely related to the electronic band structure. In fact, exploration of the interrelation between localized electronic states and the band structure represents a basic aspect of the electronic theory of semiconductors. The photoluminescence under high pressure provide an important means for investigating this interrelation. The pressure behaviours of N and NNi traps as well as some other shallow states in GaP have been investigated. we find at both room temperature and 77K, when the pressure is lower 'nan 3.3 Gpa. the single nitrogen traps dominate the luminescence while above 3. 3GPa the free exciton becomes important we observe nonlinear behaviours associared with the binding of an exciton bound to N and NNi traps, this work shows that the pressure behaviours of whole series of exciton bound to N and NNi in GaP can be quantitatively explained on the basis of the bandGreen's function taking account of pressure-dependent effective masses. This is further confirmed by a Green's function treatment based upon a proper pseudoband structure.

半导体中的局域电子态和半导体的能带结构密切相关,揭示局域电子态和能带结构之间的内在关系是当前半导体电子理论的重要方面。而压力光谱实验对研究这种相互关系提供了重要手段。本文对GaP中深、浅两组能级的不同压力行为作了系统的实验研究。实验观察到无论在室温还是在低温,压力小于3.3GPa时,以N陷阱束缚激子的发光过程为主,大于3.3GPa时则以自由激子零声子过程为主,并且所有与N有关的陷阱态都具有压力的非线性行为。根据有效质量随压力的变化提出能谷中不同能量态具有不同的压力关系。基于有效质量随压力变化的能带格林函数方法,对N和NN_i对的压力系数作了模型计算,其结果和陷阱态的压力行为符合得相当好。证实了带结构,尤其是能谷曲率随压力的变化是决定陷阱态压力行为的主要因素。

This paper introduces the laboratory experiments using Tuanshan sandstone samples collected from the compound of the Western Yunnan Earthquake: Prediction Study Area headquarters. The rock samples were coaked in water for one month before being placed under true triaxial compression. Result from the laboratory study shows that abnormal peaks of the Q-values are observed respectively along the intermediate and minimun principal stress axes and that those abnormal peaks present dissimilar changes which respectively...

This paper introduces the laboratory experiments using Tuanshan sandstone samples collected from the compound of the Western Yunnan Earthquake: Prediction Study Area headquarters. The rock samples were coaked in water for one month before being placed under true triaxial compression. Result from the laboratory study shows that abnormal peaks of the Q-values are observed respectively along the intermediate and minimun principal stress axes and that those abnormal peaks present dissimilar changes which respectively occur at 40%-70% and 50%-70% of the rupturing stress. Such abnormal peaks are followed by segments of normal values which again show rises after the rupturing. Viewing from the pressure-dependent spectral amplitude variations, it can be observed that the emergence of abnormal peak values is due to that the increments of high frequency components are much greater than that of the low frequency components. The emergence of normal values after the peak values is resulted from the fact that the low frequency component increases whereas the high frequency component decreases. The Q-value rises after the rupturing are caused by further decrease of the low frequency amplitude. The acoustic emissions also show features of peak value-relative quiescence-second peak value-retarded rupturing.

本文采用滇西地震预报实验场基地团山砂岩浸泡一个月后进行真三轴压缩试验。结果发现:最小主应力轴方向和中间主应力轴方向Q值都有异常峰值,且变化不同。它们分别在破裂应力的40%—70%和50%—70%之间。而异常峰值后,又都在一段正常值,破后又都上升。从谱振幅随压力的变化看出,异常峰值的出现是由于高频成份的增加大于低频成份。峰值后的正常值出现是由于低频成份的增加及高频成份减小所致。而破后Q的上升则是由于低频振幅减小更多所致。声发射率也有峰值—相对平静——第二峰值—缓裂特征。

 
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