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sulfurizing pressure
相关语句
  硫化压力
     To improve the properties of FeS_2 thin films,the influence of sulfurizing pressure on the microstructure and optical absorption characteristics of the FeS_2 films was investigated.
     为了提高FeS2薄膜的性能,研究了硫化压力对FeS2薄膜组织结构和光吸收性能的影响规律.
短句来源
     The crystallite size and forbidden band extent of the FeS_2 films slightly decrease with the increasing sulfurizing pressure.
     随硫化压力增大,FeS2薄膜的晶粒尺寸和禁带宽度略有减小.
短句来源
     Low sulfurizing pressure results in insufficient growth of the FeS_2 grains,while high sulfurizing pressure results in unexpected sulfurizing reaction in the substrate film.
     较低的硫化压力易导致FeS2薄膜结晶不充分,较高的硫化压力易导致基底膜层同时被硫化.
短句来源
  相似匹配句对
     pressure;
     压力;
短句来源
     The Study on the Pressure
     论压力
短句来源
     The crystallite size and forbidden band extent of the FeS_2 films slightly decrease with the increasing sulfurizing pressure.
     随硫化压力增大,FeS2薄膜的晶粒尺寸和禁带宽度略有减小.
短句来源
     On the pyrite(FeS_2) thin films prepared by sulfurizing the electrodeposited precursive films at different sulfur vapor pressure
     硫化压力对电沉积并硫化合成的FeS_2薄膜组织结构的影响
短句来源
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To improve the properties of FeS_2 thin films,the influence of sulfurizing pressure on the microstructure and optical absorption characteristics of the FeS_2 films was investigated.The precursive Fe_3O_4 films were sulfurized using constant current electrodepositing and oxidation treating,and Fe_3O_4 films was transformed into FeS_2 thin films after heat sulfur annealing of 400 ℃ at different sulfurizing pressures.Research results indicate that the Fe_3O_4 films sulfurized at 5~80 kPa can be changed into...

To improve the properties of FeS_2 thin films,the influence of sulfurizing pressure on the microstructure and optical absorption characteristics of the FeS_2 films was investigated.The precursive Fe_3O_4 films were sulfurized using constant current electrodepositing and oxidation treating,and Fe_3O_4 films was transformed into FeS_2 thin films after heat sulfur annealing of 400 ℃ at different sulfurizing pressures.Research results indicate that the Fe_3O_4 films sulfurized at 5~80 kPa can be changed into FeS_2 films.The crystallite size and forbidden band extent of the FeS_2 films slightly decrease with the increasing sulfurizing pressure.Low sulfurizing pressure results in insufficient growth of the FeS_2 grains,while high sulfurizing pressure results in unexpected sulfurizing reaction in the substrate film.Different sulfurizing pressures can result in microstrain variations of phase transformation,spot-defect quantity and surface-defect quantity,and then can result in the change of optical absorption properties in the FeS_2 films.

为了提高FeS2薄膜的性能,研究了硫化压力对FeS2薄膜组织结构和光吸收性能的影响规律.采用恒流电沉积及氧化处理制备Fe3O4先驱体薄膜,再通过400℃下的热硫化退火,使Fe3O4先驱体薄膜在不同硫压下转变成为多晶FeS2薄膜.研究结果表明,在5~80 kPa的不同硫化压力下,Fe3O4薄膜均能够转变为FeS2薄膜.随硫化压力增大,FeS2薄膜的晶粒尺寸和禁带宽度略有减小.较低的硫化压力易导致FeS2薄膜结晶不充分,较高的硫化压力易导致基底膜层同时被硫化.硫化压力的变化导致相变微观应力、点缺陷数量及面缺陷比例的变化,进而导致FeS2薄膜光吸收性能的变化.

 
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