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sulfide treatment
相关语句
  硫处理
     INFLUENCE OF CHEMICAL ETCHING AND SULFIDE TREATMENT ON InSb(111) SURFACES
     化学腐蚀和硫处理对InSb(111)表面的影响
短句来源
     The native oxide layer on the InSb surfaces is completely removed by sulfide treatment and then a sulfide passivation layer forms on the sample surfaces.
     样品经过硫处理以后能够除去InSb表面的氧化层并且形成硫化物钝化层。
短句来源
     It is found that after the sulfide treatment, the sample surfaces are covered by a thin overlayer of sulfide (8A), which prevents the sample surface from oxidization and carbon contamination in the air. XPS and UPS results show that S atoms bond to both Sb atoms and In atoms on the sample surfaces.
     结果表明,硫处理以后在样品表面生成。 一层厚度约8A的硫化物钝化层,它对防止表面的氧化和碳沾污有明显的钝化作用。
短句来源
  “sulfide treatment”译为未确定词的双语例句
     THE FERROUS SULFIDE TREATMENT OF ARSENIC WASTEWATER
     含砷废水的硫化铁处理
短句来源
     Surface Sulfide Treatment Characterization of HgCdTe by XPS and Electrical Characterization of Photodiode
     碲镉汞表面硫化的光电子能谱及器件性能研究
短句来源
     Objective To compare the gene expression status of NB4 cells before and after arsenic sulfide treatment by cDNA microarray.
     目的 利用基因表达谱芯片对NB4细胞在硫化砷作用前后基因表达的差异性进行比较。
短句来源
     Sulfide treatment after Br_2-C_2H_5OH etching can remove the oxide of the surface of HgCdTe,and decrease Te enriched. Then,in order to improve the performance of the photodiodes,the ZnS layer deposited after sulfidation is used to passivate the photodiode. The measurement shows that the photodiodes can low the dark current,and increase the operating voltage.
     利用X射线光电子谱(XPS)对HgCdTe表面的硫化特性进行了研究,发现溴腐蚀后的表面硫化处理可以去掉表面的氧化层,Te富集的程度大大减少,硫化处理后再长硫化锌对器件进行钝化,可以大大减少器件的表面漏电,增加器件工作电压和提高器件性能。
短句来源
  相似匹配句对
     L. P. treatment.
     L. P.
短句来源
     Progress in harm and treatment of sulfide
     硫化物的危害与治理进展
短句来源
     Calcium treatment changes the shape of sulfide.
     采用钙处理改变了硫化物的形态 ;
短句来源
     On Abandoning Treatment
     放弃治疗面面观
短句来源
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  sulfide treatment
In case of sulfide treatment, the nickel concentration of treated wastewater showed the lowest value after the removal of precipitates.
      
Schottky barrier diodes using gold as the contact metal are fabricated using a sulfide treatment prior to evaporation.
      
The effect of ammonium sulfide treatment on interfacial properties in ZnS/HgCdTe heterostructure
      
The sulfide treatment resulted in a 100% increase in the amount of LIP after 1 and 2?h.
      
Influence of sulfide treatment of profiled-interface Au-GaAs Schottky diodes on the polariton peak of the photoresponse
      
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The chemical etched and (NH4)2S-treated InSb(lll) surfaces have been studied using Auger electron spectroscopy and X-ray phctoelectron spectroscopy. It is found that after etching in the CP-4 solution the InSb surfaces are covered by a native oxide overlayer in which the amounts of Sb oxide are obviously more than In oxide. The native oxide layer on the InSb surfaces is completely removed by sulfide treatment and then a sulfide passivation layer forms on the sample surfaces.

本文应用俄歇电子能谱和X射线光电子能谱对化学腐蚀和硫处理的InSb表面进行了研究。实验中发现经过CP-4腐蚀以后在样品的表面生成了InSb的氧化层,氧化层中的组分是锑的氧化物明显多于铟的氧化物。样品经过硫处理以后能够除去InSb表面的氧化层并且形成硫化物钝化层。

Auger electron spectroscopy (AES), X-ray photoelectron spectroscop (XPS) and ultraviolet photoelectron spectroscopy (UPS) have been used to study the InSb(lll) surfaces treated with (NH4)O2Sx. It is found that after the sulfide treatment, the sample surfaces are covered by a thin overlayer of sulfide (8A), which prevents the sample surface from oxidization and carbon contamination in the air. XPS and UPS results show that S atoms bond to both Sb atoms and In atoms on the sample surfaces. Sb-S bonding...

Auger electron spectroscopy (AES), X-ray photoelectron spectroscop (XPS) and ultraviolet photoelectron spectroscopy (UPS) have been used to study the InSb(lll) surfaces treated with (NH4)O2Sx. It is found that after the sulfide treatment, the sample surfaces are covered by a thin overlayer of sulfide (8A), which prevents the sample surface from oxidization and carbon contamination in the air. XPS and UPS results show that S atoms bond to both Sb atoms and In atoms on the sample surfaces. Sb-S bonding peaks in the Sb3d spectra exhibit a core level shift of 1.9eV, the bonding of S to In atoms causes an In4d core level shift of 0.6-0.7eV. A thermal annealing at 350℃ gives rise to the decomposition of Sb-S bonding and the evaporation Sb atoms from the sample surfaces. In-S bonding can not be decomposed completely by annealing up to 500℃ and a small amount of S atoms remains on the sample surfaces in the form of indium sulfide.

本文用俄歇电子能谱、X射线光电子能谱和紫外光电子能谱对用硫化铵溶液处理的InSb表面进行研究。结果表明,硫处理以后在样品表面生成。一层厚度约8A的硫化物钝化层,它对防止表面的氧化和碳沾污有明显的钝化作用。钝化层中,破原子既与锑原子成键,引起Sb3d芯能级发生1.9eV的化学位移;又与铟原子成键,引起In4d芯能级发生0.6—0.7eV的化学位移。350℃的真空退火使锑的硫化物发生分解。500℃退火没能使铟的硫化物完全分解,仍有一部分硫原子以铟的硫化物形式留在样品表面。

Objective To compare the gene expression status of NB4 cells before and after arsenic sulfide treatment by cDNA microarray. Methods Two cDNA probes were made from mRNA of untreated or arsenic sulfide treated NB4 cells. The cells were labelled with Cy3 or Cy5 fluorescence dyes individually, hybridized with cDNA microarray, and scanned for fluorescent intensity. The altered gene expression was screened through the analysis of difference in gene expression profile. Results Thirty four genes related...

Objective To compare the gene expression status of NB4 cells before and after arsenic sulfide treatment by cDNA microarray. Methods Two cDNA probes were made from mRNA of untreated or arsenic sulfide treated NB4 cells. The cells were labelled with Cy3 or Cy5 fluorescence dyes individually, hybridized with cDNA microarray, and scanned for fluorescent intensity. The altered gene expression was screened through the analysis of difference in gene expression profile. Results Thirty four genes related to apoptosis, cell cycle and others expressed different after the treatment of arsenic sulfide, 28/34 were up regulated, 6/34 down regulated. Conclusion ABC50, PNAS 2 and cyclin G 2 might take part in the process of NB4 cell apoptosis induced by arsenic sulfide.

目的 利用基因表达谱芯片对NB4细胞在硫化砷作用前后基因表达的差异性进行比较。方法 用Cy3和Cy5两种不同的荧光染料通过逆转录反应将硫化砷处理前后的NB4细胞mRNA分别标记成两种探针 ,并与载有一组靶基因的基因表达谱芯片进行杂交 ,通过扫描、计算机软件分析 ,寻找经硫化砷作用后表达有差异的基因。结果 筛选出包括与细胞凋亡、DNA合成修复、蛋白翻译、细胞周期等相关的硫化砷作用前后表达有差异的基因共 34条 ,其中 6条表达上调 ,2 8条表达下调。结论 ABC5 0、PNAS 2、周期素G2 可能参与硫化砷诱导NB4细胞凋亡的发生机制

 
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