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hot filament assisted plasma cvd
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     4 The influence of substrates on the formation of c-BN thin filmsThe cBN thin films were deposited on different substrates with hot filament assisted plasma CVD and R.
     4研究了衬底对制备立方氮化硼薄膜的影响
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     HOT
     热报!
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     R & D of Miniature Hot Filament CVD System
     热丝化学气相沉积系统的小型化研究与开发
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     The Accurate Replacement of the Filament Winding of the Colour Television HOT
     彩电行输出变压器灯丝绕组的准确置换
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     GENETIC OPTIMIZATION OF HOT FILAMENT PARAMETERS IN HFCVD SYSTEM
     HFCVD系统热丝参数遗传优化(英文)
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     HOT FILAMENT TECHNIQUE OF DIAMOND FILMS GROWTH BY HFCVD
     HFCVD法生长金刚石薄膜中的热丝技术
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The influence of substrates on the formation of cubic boron nitride(c\|BN) thin films was reported.The c\|BN thin films were deposited on different substrates with hot\|filament\|assisted plasma CVD and RF sputter.In the CVD method,NH 3,B 2H 6 and H 2 were reacting gases,and Si,Ni,Co,stainless steel and other materials were substrates.The experiments showed that the cubic phase content in c\|BN thin films was affected by substrates.The film on Ni substrate was the best...

The influence of substrates on the formation of cubic boron nitride(c\|BN) thin films was reported.The c\|BN thin films were deposited on different substrates with hot\|filament\|assisted plasma CVD and RF sputter.In the CVD method,NH 3,B 2H 6 and H 2 were reacting gases,and Si,Ni,Co,stainless steel and other materials were substrates.The experiments showed that the cubic phase content in c\|BN thin films was affected by substrates.The film on Ni substrate was the best among all the substrates in the CVD method,and its cubic phase content reached over 80%.Our study also found that in the CVD method a Ni interlayer on the Si substrate can improve the quality of the c\|BN thin films than directly on Si substrate.In the sputter method,the working gas was N 2 and Ar,hot\|pressed hexagonal boron nitride(h\|BN) of 4N purity was used as sputtering target,the c\|BN thin film with over 90% content of cubic phase was successively deposited on Si substrate.In our research,the boron nitride thin films were characterized by Fourier Transform Infrared(FTIR) Spectra and X\|ray diffraction. Finally we concluded that for CVD method the cubic phase content and adhesion are highly affected by the crystal lattice mismatch between c\|BN and substrate materials;however,for sputter method the crystal lattice mismatch between c\|BN and substrate materials little affects the quality of c\|BN thin films.

较系统地研究了不同衬底材料对制备立方氮化硼薄膜的影响 .用热丝增强射频等离子体CVD法 ,以NH3,B2 H6和H2 为反应气体 ,在Si,Ni,Co和不锈钢等衬底材料上 ,成功生长出高质量的立方氮化硼薄膜 .还用13 5 6MHz的射频溅射系统将c BN薄膜沉积在Si衬底上 ,靶材为h BN(纯度 99 99% ) ,溅射气体为氩气和氮气的混合气体 ,所得到的氮化硼薄膜中立方相含量高于 90 % .用X射线衍射谱和傅里叶变换红外谱对样品进行的分析表明 ,衬底材料与c BN的晶格匹配情况 ,对于CVD生长立方氮化硼薄膜影响很大 ,而对溅射生长立方氮化硼薄膜影响不大 .

 
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