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discontinuous grain growth
相关语句
  不连续晶粒长大
     The characteristics of discontinuous grain growth are found in the transition zone in the intermediate temperature region.
     实验发现,低温区和高温区的晶粒长大动力学有明显差异,而在中温区出现不连续晶粒长大特征。
短句来源
     Discontinuous grain growth in metal nanocrystalline powders
     金属纳米晶粉体材料中的不连续晶粒长大
短句来源
  “discontinuous grain growth”译为未确定词的双语例句
     that a structure showing discontinuous grain growth is observed in ferrites with the addition of small amounts of 6263 up to 0.2 wt.%. Further increase in the doping level (^0.5 wt.%) , a relatively uniform microstructure with large grain size is obtained;
     在B_2O_3小于0.2wt.%范围内,随着B_2O_3添加量的增加,容易引起晶粒的不连续长大,但随着B_2O_3添加量的进一步增加(≥0.5wt%),铁氧体晶粒粒径分布窄;
短句来源
  相似匹配句对
     Discontinuous grain growth in metal nanocrystalline powders
     金属纳米晶粉体材料中的不连续晶粒长大
短句来源
     4. Grain growth is a discontinuous process.
     4.晶粒长大是一个不连续的过程.
短句来源
     GRAIN GROWTH IN TICONAL X
     含钛铝镍钴合金的晶粒长大
短句来源
     Effect of Grain Growth on Superplasticity
     晶粒长大对超塑性的影响
短句来源
     The growth of E.
     重组HBD 2对E.
短句来源
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  discontinuous grain growth
Above this temperature, a discontinuous grain growth process leads to the formation of coarse elongated macrograins.
      
The fine-grained microstructures were essentially stable against discontinuous grain growth and/or primary recrystallization during annealing at temperatures up to 800 °C, where the specimens maintain a very fine ferrite grain size.
      
The grains size grew to 8 to 25 μm with a remarkable discontinuous grain growth for pellet LAS compact contain LiF 5 wt pct sintered at 1050 °C for 5 hours.
      
The grain coarsening temperature (Tgc) found was 1,080°C, with occurrence of abnormal or discontinuous grain growth.
      
A concentration of 1.2 mol %, however, induces discontinuous grain growth, while this is not the case for 0.6 mol %.
      
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The preparation of ZnO seed grains and the effect of ZnO seed grains on the microstructure and electric properties of ZnO varistor were studied.It is shown that the broad grain size distribution of a ZnO low voltage varistor due to discontinuous grain growth can be narrowed by introducing a large number of ZnO seed grains to the starting powder. The addition of the seed grains to the ceramic powder is an effective means of preventing the growth of single large grains, thus making...

The preparation of ZnO seed grains and the effect of ZnO seed grains on the microstructure and electric properties of ZnO varistor were studied.It is shown that the broad grain size distribution of a ZnO low voltage varistor due to discontinuous grain growth can be narrowed by introducing a large number of ZnO seed grains to the starting powder. The addition of the seed grains to the ceramic powder is an effective means of preventing the growth of single large grains, thus making the control of final grain size and electric properties much easier.

本文研究了ZnO籽晶的制备,探讨了籽晶对ZnO压敏陶瓷材料微观结构及压敏电压、通流容量、非线性系数等电性能的影响.结果表明,通过掺加ZnO籽晶,可有效地控制材料中ZnO晶粒生长和材料微观结构,达到降低材料压敏电压和提高通流容量的目的.

Grain growth in highly pure nanocrystalline Co powders prepared by high-energy ball milling with the average grain size of about(17±3)nm was investigated by a series of annealing experiments.The characteristics of discontinuous grain growth are found in the transition zone in the intermediate temperature region.The TEM observations show that there are a number of low-angle nanograin boundaries at low temperatures,whereas mostly typical high-angle grain boundaries at high temperatures.It is proposed...

Grain growth in highly pure nanocrystalline Co powders prepared by high-energy ball milling with the average grain size of about(17±3)nm was investigated by a series of annealing experiments.The characteristics of discontinuous grain growth are found in the transition zone in the intermediate temperature region.The TEM observations show that there are a number of low-angle nanograin boundaries at low temperatures,whereas mostly typical high-angle grain boundaries at high temperatures.It is proposed that,the rapid grain growth occurring in the intermediate temperature region is resulted from enhanced grain growth promoted by the stored energy as an extra driving force,and through a particular dominant mechanism of nanograin rotations.

采用高能球磨法制备了Co纳米晶粉体,平均晶粒尺寸为(17±3)nm。设计了一系列宽温度范围的退火实验,考察纯Co纳米晶粉体的晶粒长大行为。实验发现,低温区和高温区的晶粒长大动力学有明显差异,而在中温区出现不连续晶粒长大特征。高分辨透射电镜观测表明:在低温区,纳米晶中存在较大比例的小角度纳米晶界,而在高温区则基本为典型的大角度晶界。结合纳米晶热力学计算和DSC分析,认为纳米晶粒在中温区的突发迅速长大是由残余储存能作为附加驱动力激发的动力学过程,其主导机制是通过相邻小角度位向差的纳米晶粒的转动而实现晶粒快速粗化。

Ultrafine WC-10Co powder prepared by a direct reduction and carbonization process was used to prepare the WC-10Co cemented carbide,and the properties of WC-10Co cemented carbide prepared by microwave sintering,spark plasma sintering or vacuum sintering at 1200 ℃ were compared.The relative density of microwave sintered ultrafine WC-10Co cemented carbide reaches 99.5%,and magnetic coercivity is more than 30.0 kA/m,Rockwell A hardness is more than 92.5,average grain size is less than 350 nm,and ultrafine cemented...

Ultrafine WC-10Co powder prepared by a direct reduction and carbonization process was used to prepare the WC-10Co cemented carbide,and the properties of WC-10Co cemented carbide prepared by microwave sintering,spark plasma sintering or vacuum sintering at 1200 ℃ were compared.The relative density of microwave sintered ultrafine WC-10Co cemented carbide reaches 99.5%,and magnetic coercivity is more than 30.0 kA/m,Rockwell A hardness is more than 92.5,average grain size is less than 350 nm,and ultrafine cemented carbide with excellent properties is obtained.Compared with sintering body sintered by conventional sintering,the microwave sintering can not only lower sintering time,but also increase the properties of cemented carbide,and the discontinuous grain growth is inhibited effectively by microwave sintering process compared with spark plasma sintering process.

以直接还原碳化方法制备的超细碳化钨-钴复合粉末为原料,采用微波烧结、放电等离子体烧结、真空烧结制备碳化钨-钴硬质合金,研究1 200℃的烧结温度下,不同烧结方法对碳化钨-钴硬质合金性能的影响。微波烧结超细WC-10Co复合粉末,在1 200℃的烧结温度下保温7 min,制备了综合性能优良的超细WC-10Co硬质合金,相对密度达到99.5%,洛氏硬度为HRA 92.5,矫顽力为30.0 kA/m,磁饱和度为83%,平均晶粒粒度≤350 nm。与采用常规烧结方法得到烧结体相比,烧结时间显著减少,烧结体性能提高;与放电等离子体烧结相比,晶粒异常长大得到一定的控制。

 
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