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line defect
相关语句
  线缺陷
     Research of Print Speck and Line Defect Automatic Detection Algorithm
     印刷品点和线缺陷自动检测算法的研究
短句来源
     We found that transverse dislocation structures, acted as the line defect, can form waveguides too;
     我们发现,横向位错效应与线缺陷相似,它可以使处于禁带频率范围内的声波沿位错通道进行传播,形成声波导;
短句来源
     2. Using the two spots defect and the line defect, a multi-port filter is designed and simulated.
     2.用点缺陷结合线缺陷构造了多路滤波器,得到了较好的结果;
短句来源
     Transmission of light in prohibit band arised greatly afer introducing the line defect.
     计算具有线缺陷的光子晶体的透过率谱可以看出,引入缺陷以后,频率位于禁带处的光的透过率大大增加。
短句来源
     The purpose of this paper is to study the dot defect and line defect in photonic crystal, waveguide and demultiplexer.
     本文主要研究了光子晶体中的点缺陷和线缺陷,以及由缺陷构成的光子晶体波导和分频器。
短句来源
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  折纹缺陷
     EFFECTS OF HAZ MICROSTRUCTURE OF COLD ROLLED STEEL SHEETS ON LINE DEFECT
     冷轧钢板HAZ组织性能对轮辋折纹缺陷的影响
短句来源
  “line defect”译为未确定词的双语例句
     Control and Analyse of Welding Line Defect in C70-type Vehicle Trunk Wall
     C70型车箱端墙焊缝缺陷分析与控制
短句来源
     In Line Defect Detection Technology and Equipment for High Volume Production of Large Diameter Wafer
     大圆片批生产中的在线检测工艺及设备
短句来源
     Based on the defect analysis of the PLC coal conveying control system in power plant, this paper puts forward a new method for on line defect judgement of the control system.
     在对PLC网络控制的火电厂输煤控制系统的故障分析基础上 ,提出了一种在线判别系统故障的新方法。
短句来源
     Based on the research of existing rules, a new method for the FPC line defect recognition is advanced, named multi-template reference contrast.
     该文针对FPC线路的瑕疵识别问题, 在研究已有瑕疵识别规则的基础上, 设计了一种多模板参考比对法。
短句来源
     1. By using FDTD, the photonic crystal including one spot defect, twospots defect and line defect is analysed.
     1.用时域有限差分法计算了光子晶体缺陷对其禁带的影响。
短句来源
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  line defect
Tem study of dark line defect growth from dislocation clusters in (GaAl)As-GaAs double heterostructure lasers
      
In a two-dimensional crystal composed of parallel high-refractive index rods in a low-index background a line defect can be formed by removing a row of these rods, which can act as a waveguide for frequencies in the bandgap of the crystal.
      
Using the modified Combes-Thomas estimates, we prove that the eigenfunctions corresponding to the eigenvalues decay exponentially away from the line defect.
      
A photonic crystal fiber can be regarded as a perfect two-dimensional photonic crystal (PC) with a line defect along the axial direction.
      
The line defect disordered phases follow the expected Bose glass behavior, while the point defect disordered phases do not exhibit the expected vortex glass behavior.
      
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The degradation and the dependence of the light output on the current of theGaAs-AlGaAs DH structure lasers with the stripe geometry formed by proton bom-bardment are investigated.It is found that the lifetime of CW operation of ourlasers with fast degradation mechanism is generally less than 200 hrs. The increaseddark-line defects in the active-region of the cegraded lasers have been observed bymeans of EBIC method. It is found that the DH lasers exceeding 200hrs at CW operation could,generally,operate...

The degradation and the dependence of the light output on the current of theGaAs-AlGaAs DH structure lasers with the stripe geometry formed by proton bom-bardment are investigated.It is found that the lifetime of CW operation of ourlasers with fast degradation mechanism is generally less than 200 hrs. The increaseddark-line defects in the active-region of the cegraded lasers have been observed bymeans of EBIC method. It is found that the DH lasers exceeding 200hrs at CW operation could,generally,operate more than 5000 hrs,some of the lasers have been working for morethan 8000 hrs. It is shown that the P-I characteristics are fairly linear among most of theDH laser.While the kink of P-I characteristics is observed in some samples ac-cording to the nearfield observation and the results of measured emission spectrum.It is suggested that the kink is due to the non-uniform distribution of the Al con-tent in the active-region.

研究了质子轰击条形双异质结构(DH)激光器的退化特性及P-I 特性,发现一般快退化器件 CW工作寿命小于 200小时.损坏后用 EBIC方法观察到有源区中增殖着暗线缺陷. DH激光器CW工作寿命超过200小时,而且每千小时的退化率小于4%的器件,一般cw工作寿命都能超过5000小时,有的器件已超过8000小时***仍在继续工作. 大部分器件具有良好的线性P-I特性,也有的观察到出现扭折“Kink”,结合近场观测和发射光谱的研究,判定这是由于激光器有源区中Al含量(即x值)的不均匀分布所致.

In this article, The principle, construction, opto-electrical configuration and characteristics of the infrared TV line scanner are presented. The TV line scanner has been applied to the near-field observation, profiles of the infrared LED'S and Laser's, and to the investigation of dark line defects and far-field observations of LED's. It has been proved to be useful for the determination of the line width of the photolithographic masks and for the transmmission inspection of silicon...

In this article, The principle, construction, opto-electrical configuration and characteristics of the infrared TV line scanner are presented. The TV line scanner has been applied to the near-field observation, profiles of the infrared LED'S and Laser's, and to the investigation of dark line defects and far-field observations of LED's. It has been proved to be useful for the determination of the line width of the photolithographic masks and for the transmmission inspection of silicon wafers.

本文介绍了研制的电视选行扫描器的原理、结构、观察系统装置的特点和性能。此扫描器已应用于发光管及激光器的近场形貌、近场分布、发光管的暗线研究以及远场观察,光刻线条的测量,硅片透射研究等方面的工作。

We present here a model of the reduction of dislocations in LPB layers by the formation of <110> oriented interfacial dislocations parallel to the surface of the substrate due to the glide motion of substrate threading dislocations which is drived by the thermal stress produced by a temperature difference. In the temprature gradient LPE under a steady natural convection flow, there is a temperature difference across the thickness of the substrte. The temperature difference can cause a thermal shear stress in...

We present here a model of the reduction of dislocations in LPB layers by the formation of <110> oriented interfacial dislocations parallel to the surface of the substrate due to the glide motion of substrate threading dislocations which is drived by the thermal stress produced by a temperature difference. In the temprature gradient LPE under a steady natural convection flow, there is a temperature difference across the thickness of the substrte. The temperature difference can cause a thermal shear stress in the fixed substrate. Thick GaAs and Gai-xAlxAs (x < 0.3) layers were grown on (100) GaAs substrates. The estimated value of the thermal stress is slightly greater than the critical resolved shear stress for the formation of <110> oriented dark line defects. The observation of subface etch pits shows that the epitaxial layers have lower dislocation densities than that of the substrates or are even dislocation-free. The observations of interfacial etch grooves and cathodoluminescence show that substrate threading dislocations bent so that segments run along the interface and a interfacial dislocation network is formed. The transmission electron microscopy observation shows that the majority of these interfacial dislocations are 60° type dislocations and the minority are Lomer dislocations. It implies that it is possible to eliminate all substrate threading dislocations with the introduction of interfacial dislocations by thermal shear stress.

提出由温差造成热剪切应力,引起衬底穿线位错滑移,形成<110>界面位错,从而降低LPE层中位错的模型。稳定自然对流下的温度梯度液相外延,存在衬底厚度方向的温差,能在边缘固定的衬底中造成热剪切应力。生长了厚GaAs和Ga_(1-x)Al_xAs层(x<0.3),估算的热剪切应力大于产生<110>暗线缺陷的临界剪切应力。表面腐蚀坑观察表明,外延层位错密度下降,或无位错。界面蚀槽和阴极荧光观察表明,衬底穿线位错在界面弯曲成<110>界面位错。透射电子显微镜观察表明,界面位错多数是60°位错,少数是Lomer位错,这意味着有可能借助热应力引入界面位错而将所有的衬底穿线位错消除。

 
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