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alloying condition
相关语句
  合金条件
     Optimum alloying condition in ohmic contact
     欧姆接触最佳合金条件
短句来源
     A transmission line model (TLM) was presented to calculate the contact resistivity and the optimum alloying condition of 450℃, 90s was chosen.
     用探针台测得不同合金工艺条件下的接触电阻值,建立传输线(TLM)模型,计算了欧姆接触的比接触电阻。 选出了450℃,90s的最佳合金条件
短句来源
     MESFET on GaAs substrate and PHEMT on GaAs or InP substrate use the same Au-Ge-Ni alloy system in fabrication of ohmic contact,but the alloying conditions are different according to their materials characteristic. The best alloying condition including temperature and time was obtained by experiment with reasonable redundancy for MESFET and PHEMT.
     对于 Ga As MESFET和以 Ga As或 In P为衬底的 PHEMT的欧姆接触制备 ,虽均采用 Au-Ge- Ni系统 ,但其合金条件却因材料特性各异而不同。
短句来源
  微合金条件
     Experimental results indicate that Si-Ga replacement diffusion is the essence to obtain a good ohmic contact to n-typs GaP under the optimum alloying condition.
     实验结果表明,在最佳微合金条件下,Si-Ga替位扩散是获得良好欧姆接触的实质。
短句来源
  “alloying condition”译为未确定词的双语例句
     The alloying experiments were carried out on GaAs active layer which doped concentration is 1×10~(17)cm-3 and the contact resistances under different alloying condition were examined by use of the probe stage.
     用50%柠檬酸/H_2O_2溶液腐蚀掉GaAs MESFET材料的LT GaAs帽层,用盐酸漂掉AlAs自停止层,在掺杂浓度为1×10~(17)cm~(-3)的有源沟道层上做了欧姆接触合金实验。
短句来源
     The dispersive distribution of r' phase and Y2O3 particles are obtained in common and so,in general,the Ni-base alloys will attain its ODS alloying condition on surface.
     γ′相与Y_2O_3 粒子共同弥散分布,从而使一般镍基合金实现了表面ODS合金化。
短句来源
     The optimum alloying condition in ohmic contact of GaAlAs/GaAs and InGaAsP/InP semiconductor lasers is described in detail, and theoretical analysis on the point of view of metallization is given.
     本文比较详细地介绍了GaAs和InP半导体激光器欧姆接触中合金的最佳条件,并从金属学观点对此进行了理论分析.
短句来源
     The optimum alloying condition for the formation of ohmic contact elec-trode on the p-GaP epilayer by Au-Be material has been investigated.
     本文研究了用Au-Be合金材料制备p-GaP欧姆接触电极的最佳条件.
短句来源
     Alloying condition's impacts on Nb content and thickness of alloying layer were analyzed. On this basis, optimized process conditions are obtained.
     分析了合金化条件对渗层Nb含量及厚度的影响,在此基础上得到优化的典型工艺条件。
短句来源
  相似匹配句对
     ALLOYING
     中国有色金属史(十一) 合金制取
短句来源
     The effects of milling condition on alloying are studied.
     研究了球磨条件对合金化的影响。
短句来源
     Optimum alloying condition in ohmic contact
     欧姆接触最佳合金条件
短句来源
     (3)alloying;
     (3)合金化阶段;
短句来源
     Under the condition:(H) (?)
     (H) (?)
短句来源
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  alloying condition
Thermal stability of sputter-deposited ZnO films (0.5-2.0 μm thick) was tested with a post-deposition heat treatment at 430°C for 10 min, which is similar to a standard ohmic contact alloying condition for GaAs.
      


The optimum alloying condition in ohmic contact of GaAlAs/GaAs and InGaAsP/InP semiconductor lasers is described in detail, and theoretical analysis on the point of view of metallization is given.

本文比较详细地介绍了GaAs和InP半导体激光器欧姆接触中合金的最佳条件,并从金属学观点对此进行了理论分析.

The optimum alloying condition for the formation of ohmic contact elec-trode on the p-GaP epilayer by Au-Be material has been investigated. The experimental results, including contact resistance, I-V characteristic and SEM observation of surface morphology are reported. The analysis of metallurgical Properties for the ohmic contact electrode with lower contact resistance is given.Process techniques of fabrication ohmic contact on p-type GaP layer were improved and many batches of LED's which have lower...

The optimum alloying condition for the formation of ohmic contact elec-trode on the p-GaP epilayer by Au-Be material has been investigated. The experimental results, including contact resistance, I-V characteristic and SEM observation of surface morphology are reported. The analysis of metallurgical Properties for the ohmic contact electrode with lower contact resistance is given.Process techniques of fabrication ohmic contact on p-type GaP layer were improved and many batches of LED's which have lower contact resistance around 1× 10-3Ω·cm3 and good Ⅰ-Ⅴcharacteristics were made by alloying in temperature range from 540℃ to 560℃.

本文研究了用Au-Be合金材料制备p-GaP欧姆接触电极的最佳条件.报道了接触电阻、L-V特性以及用SEM观察电极表面形貌的实验结果,并对获得较低接触电阻的电极有关冶金性质进行了分析.进而,改进了在p-GaP外延层制备欧姆电极的工艺技术,在540℃-560℃温度范围内制得多批I-V特性好、大约1×10~3Ω·cm~2低接触电阻的发光二极管.

An, investigation is made for the ohmic contact condition to form an Au-Si electrode on n-GaP. The surface morphology of the Au-Si electrode changes with variation of sintering temperature and time. It is found that the electric characteristics of M-S contact are closely related to the microcrystallizatioa states. The results of Auger Electron Spectroscopy (AES) and Energy Dispersive Analysis X-ray Spectroscopy(EDAS) measurements show that the interface layer contains Au-Ga intermetallic compound and impurity...

An, investigation is made for the ohmic contact condition to form an Au-Si electrode on n-GaP. The surface morphology of the Au-Si electrode changes with variation of sintering temperature and time. It is found that the electric characteristics of M-S contact are closely related to the microcrystallizatioa states. The results of Auger Electron Spectroscopy (AES) and Energy Dispersive Analysis X-ray Spectroscopy(EDAS) measurements show that the interface layer contains Au-Ga intermetallic compound and impurity P,Si.The relation between the interfacial reaction and surface morphology under the sintering condition is explained from metallurgy point of view. Experimental results indicate that Si-Ga replacement diffusion is the essence to obtain a good ohmic contact to n-typs GaP under the optimum alloying condition.

本文探讨了用Au-Si合金在n-GaP上形成欧姆接触的条件,用扫描电镜(SEM)研究了Au-Si电极表面的形貌及其随微合金温度、时间的变化情况。发现M-S接触的欧姆特性与表面微结晶状态有关。借助俄歇能谱(AES)和能量色散谱(EDAS)初步分析了Au-Si/n-GaP系统接触的界面含有Au-Ga金属间化合物以及P和Si杂质。从金属学观点解释了在微合金条件下界面反应、表面形貌的变化规律。实验结果表明,在最佳微合金条件下,Si-Ga替位扩散是获得良好欧姆接触的实质。

 
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