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infrared applications
相关语句
  红外应用
     Promising results indicate that p GaAs and Si HIWIP far infrared detectors have great potentiality to become a strong competitor in far infrared applications.
     结果表明 ,p- Ga As和 Si的 HIWIP远红外探测器有希望成为远红外应用中具有强大竞争力的器件
短句来源
  “infrared applications”译为未确定词的双语例句
     Growth and Characterization of AgGaSe_2 Crystals for Infrared Applications
     红外晶体AgGaSe_2的生长和品质
短句来源
     CROWTH AND CHARACTERIZATION STUDY ON AgGaSe_2 CRYSTAL FOR NONLINEAR INFRARED APPLICATIONS
     红外非线性光学晶体硒镓银的生长及性质观测
短句来源
     Growth of Ultrathin PtSi Films for Infrared Applications
     红外用超薄PtSi膜的一种制备新方法
短句来源
  相似匹配句对
     (D) applications;
     D. 应用;
短句来源
     The applications to infrared detector are emphasized.
     HgCdTe是制作红外探测器的最佳材料。
短句来源
     Liquid crystal infrared optics and applications
     液晶红外光学和应用
短句来源
     SWAP AND ITS APPLICATIONS
     互惠掉换(SWAP)及其应用
短句来源
     Infrared Dryer
     红外烘干装置
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  infrared applications
This study gives some insight to the present limitation to achieve higher performance and high operability for low temperature infrared applications on MBE grown HgCdTe material.
      
Molecular-beam epitaxial growth of HgCdTe infrared focal-plane arrays on silicon substrates for midwave infrared applications
      
Numerical model of a proposed double heterostructure light-emitting diode for mid-infrared applications
      
A sol-gel-derived antireflective coating on optical glass for near-infrared applications
      
Analytical Simulation of an InAsSb Photovoltaic Detector for Mid-Infrared Applications
      
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In this paper the developments of optical thin film in laser and infrared applications have been introduced. The requirements for environmental test also haw been given.

本文介绍了当前在激光与红外应用中的光学薄膜动态,并给出其环境试验要求

Carbon nitride thin films have been deposited by radio frequency sputtering at different substrate temperature. The electron structure and optical properties of the carbon nitride thin films have been systematically studied as a function of the substrate temperatur. The chemical structure and composition of the films were char-acterind by Fourier transform infrared spectroscopy (FTIR~) and X-ray photoelectron spectroscopy (XPS). The optical properties of the films wer evaluated using transmission ultraviolet...

Carbon nitride thin films have been deposited by radio frequency sputtering at different substrate temperature. The electron structure and optical properties of the carbon nitride thin films have been systematically studied as a function of the substrate temperatur. The chemical structure and composition of the films were char-acterind by Fourier transform infrared spectroscopy (FTIR~) and X-ray photoelectron spectroscopy (XPS). The optical properties of the films wer evaluated using transmission ultraviolet - visible - near inflared (UV) spectroscopy .The maximum N atom concentration in the Films arrived at 0.4. The binding energy (BE) of core level Cls and Nls produceas a large shift in range of 4.41 ~0.3 eV depended on substrate temperature Ts. Both N atom concentration and shift of BE of core leve are decreased with Ts increasing. It illustrates that raising Ts is not a good way to form carbon nitride films. UV spectra shows that the films have a good transparency in near infrared region, but there is a sharp absorption peak around 2720nm. The peak disappears when Ts is higher than 400 ℃. These results may be meaning for infrared application as a protective optical coating.

在不同的衬底温度下用射频溅射方法制备了氮化碳薄膜。系统地研究了氮化碳薄膜的电子结构和光学性质随温度的变化规律。用富里叶变换红外光谱(FTIR)和X光电子能谱(XPS)对其化学结构及成分进行了分析。用透射紫外-可见-近红外(UV)光谱对其光学性质进行了评价。结果表明:薄膜中最大氮原子浓度为0.4。芯能级C1s和N1s的结合能产生了4.41~0.3eV的能移。能移的大小与衬底温度密切相关,并且薄膜中的N原子浓度和芯能级结合能随衬底温度增加而减少,表明增加衬底温度不利于氯化碳薄膜的形成。UV谱表明氯化碳膜在近红外区有一个好的透明性。但在2720nm附近存在有一明税的吸收峰。当衬底温度高于400℃时,该吸收峰消失。

The recent development of p GaAs and Si homojunction interfacial workfunction internal photoemission (HIWIP) far infrared (>40μm) detectors was briefly reviewed, both theoretically and experimentally. The emphasis is on the detector photoresponse mechanism and detector performance. Promising results indicate that p GaAs and Si HIWIP far infrared detectors have great potentiality to become a strong competitor in far infrared applications.

从理论和实验两方面简要评述了 p- Ga As和 Si同质结界面功函数内光发射 (HIWIP)远红外 (>40μm)探测器的最新发展 .重点讨论了此探测器的光响应机制和探测器性能 .结果表明 ,p- Ga As和 Si的 HIWIP远红外探测器有希望成为远红外应用中具有强大竞争力的器件

 
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