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d numerical analysis
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  维数值分析
     Finite Element 2D Numerical Analysis of Microwave Recessed-Gate GaAs FET's
     微波凹槽栅结构GaAs FET’s的有限元二维数值分析
短句来源
     This paper presents a 2D numerical analysis method and program for GaAs FET's byusing finite-element method.
     本文提出了一个采用有限元方法,适用于 GaAs FET’s 的二维数值分析的方法和程序.
短句来源
     The internal physical pictures of microwave recessed gate GaAs FET's,such asthe distributions of carrier concentration,of potential,field and velocity are revealed byusing finite element 2D numerical analysis,and some important parameters as functionsof recess depth are calculated.
     本文采用有限元二维数值分析方法揭示了微波凹槽栅结构 GaAs FET’s在工作状态下的内部物理图象,如载流子浓度分布、电位分布、电场分布以及速度分布等,并由此计算了一些重要的器件参数与凹槽深度的关系.
短句来源
     2D Numerical Analysis on Lubrication Process of Float Ring Bearing
     浮环轴承润滑过程的二维数值分析
短句来源
     The threshold voltages of MOSFETs with micron and submicron channel length under different conditions are calculated by this model. The results are in good agreement with those obtained by the 2D numerical analysis program.
     用此模型对各种不同条件下的微米、亚微米MOSFET的阈电压进行了计算,其结果与二维数值分析程序得到的结果相符甚好。
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  “d numerical analysis”译为未确定词的双语例句
     A 3D Numerical Analysis of F_2 Fault Waterproof Pillar in Tao Yuan Coal Mine
     桃园煤矿F_2断层防水煤柱留设的三维数值分析
短句来源
     At last,FLAC3D numerical analysis shows the feasibility and reasonableness of the handling measure of the high slope.
     最后通过三维显示拉各朗日有限差分程序(FLAC3D)模拟了高边坡放坡和支护效果,论证了治理措施的有效性和合理性。
短句来源
     3D numerical analysis of single-pile bearing capacity of bored cast-in-situ pile
     钻(挖)孔灌注桩单桩承载力三维数值分析
短句来源
     Through the results of 2D numerical analysis nsing finite element method for reces-sed-gate GaAs FET's,this paper points out that with the increase of recess depth d_x,the main performance parameters for power and low noise GaAs FET's, i.e.the maxi-mum output power P_(max) and the minimum noise coefficient F_(mix) are improved,However,another main parameter for both devices,i. e.
     本文通过对GaAs FET’s进行有限元二维分析的结果表明,随着凹槽深度d_R的增加,功率器件和低噪声器件的各自的主要性能指标,即最大输出功率P_(max)和最低噪声系数F_(mln),虽能得到改善,但功率器件和低噪声器件的另一个性能指标,即单向功率增益G_(?)
短句来源
     3D numerical analysis on air cross pollution of opening and shaft in ventilation of highway tunnel
     公路隧道通风空气交叉污染三维数值分析
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  相似匹配句对
     (3) numerical analysis;
     (3) 数值仿真研究;
短句来源
     Numerical Analysis of Sensors
     传感器的数值分析
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     Methods:Numerical analysis.
     方法数值分析;
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     Analysis of G.
     G.
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     The analysis of M(?)
     M(?)
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  d numerical analysis
The 3-D numerical analysis was carried out on incompressible fluid flows in the pneumatic spreader by using finite volume method combined with the k-? turbulence model which solves Reynolds-averaged Naiver-Stokes equations.
      
A three-dimensional discrete element model of laminated glass plane is presented and a 3D numerical analysis code, which can simulate the impact fracture behavior of automobile laminated glass, is developed.
      
A 3D numerical analysis of the flow and mass transfer in helical pipes is presented.
      
The 1D numerical analysis is performed for a sample of input ground motions to consider the uncertainty on seismicity.
      


This paper presents a 2D numerical analysis method and program for GaAs FET's byusing finite-element method.Owing to the application of a new algorithm which is some-what different from traditional Gummel method,the computational process is simplifiedand the computational effort is remarkably reduced.By using this method,even though thetotal number of mesh points is much less than reported by other papers,yet the calcula-ted results for typical GaAs FET's agree well with those of other 2D analyses...

This paper presents a 2D numerical analysis method and program for GaAs FET's byusing finite-element method.Owing to the application of a new algorithm which is some-what different from traditional Gummel method,the computational process is simplifiedand the computational effort is remarkably reduced.By using this method,even though thetotal number of mesh points is much less than reported by other papers,yet the calcula-ted results for typical GaAs FET's agree well with those of other 2D analyses and experi-mental data.

本文提出了一个采用有限元方法,适用于 GaAs FET’s 的二维数值分析的方法和程序.由于采用了与传统的Gummel算法有所不同的计算方法,使计算过程得到简化,计算工作量大为减少.采用本文的方法,即使在网格点总数与文献相比大为减少的情况下,对典型的GaAsFET’s的计算结果仍能与文献报道的其它二维分析结果和实验数据取得较好的一致.

The internal physical pictures of microwave recessed gate GaAs FET's,such asthe distributions of carrier concentration,of potential,field and velocity are revealed byusing finite element 2D numerical analysis,and some important parameters as functionsof recess depth are calculated.Based on these analyses and calculations,a series of pro-blems of device physics concerning recessed gate GaAs FET's are discussed,e.g.,thestatus of dipole layer inside the device,the concept of "effective gate length",thereasons...

The internal physical pictures of microwave recessed gate GaAs FET's,such asthe distributions of carrier concentration,of potential,field and velocity are revealed byusing finite element 2D numerical analysis,and some important parameters as functionsof recess depth are calculated.Based on these analyses and calculations,a series of pro-blems of device physics concerning recessed gate GaAs FET's are discussed,e.g.,thestatus of dipole layer inside the device,the concept of "effective gate length",thereasons why recessed gate structure is superior to planar one both in microwave powerand in microwave low noise applications.

本文采用有限元二维数值分析方法揭示了微波凹槽栅结构 GaAs FET’s在工作状态下的内部物理图象,如载流子浓度分布、电位分布、电场分布以及速度分布等,并由此计算了一些重要的器件参数与凹槽深度的关系.以此为基础,本文分析并讨论了一些有关的器件物理问题,如:器件内部的电偶极层的状况、有效栅长的概念,凹槽栅结构之所以在微波功率器件及低噪声器件二个方面的性能均优于平面栅结构的原因.

Through the results of 2D numerical analysis nsing finite element method for reces-sed-gate GaAs FET's,this paper points out that with the increase of recess depth d_x,the main performance parameters for power and low noise GaAs FET's, i.e.the maxi-mum output power P_(max) and the minimum noise coefficient F_(mix) are improved,However,another main parameter for both devices,i.e.the unilateral gain Gu,is decreased.Adiscussion is given on the problem concerning how to choose the optimal recess depthfor...

Through the results of 2D numerical analysis nsing finite element method for reces-sed-gate GaAs FET's,this paper points out that with the increase of recess depth d_x,the main performance parameters for power and low noise GaAs FET's, i.e.the maxi-mum output power P_(max) and the minimum noise coefficient F_(mix) are improved,However,another main parameter for both devices,i.e.the unilateral gain Gu,is decreased.Adiscussion is given on the problem concerning how to choose the optimal recess depthfor power and low noise recessed-gate GaAs FET's.The conclusion is that a shallowrecess structure is suitable for power devices and a deep one is suitable for low noisedevices.

本文通过对GaAs FET’s进行有限元二维分析的结果表明,随着凹槽深度d_R的增加,功率器件和低噪声器件的各自的主要性能指标,即最大输出功率P_(max)和最低噪声系数F_(mln),虽能得到改善,但功率器件和低噪声器件的另一个性能指标,即单向功率增益G_(?)却下降了.本文对如何解决这一矛盾,以寻求凹槽栅器件的最佳凹槽深度的问题进行了讨论.结论是,功率器件宜采用浅凹槽结构,低噪声器件宜采用深凹槽结构.

 
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