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electro parameter
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  电参数
     The relationship between surface roughness of electromachined diamond thick film, material removal rate and EDM electro parameter was investigated in detail. The results indicated that both the surface roughness and material removal rate increased with the increase of peak current and pulse width.
     掺杂后金刚石厚膜电阻率范围达到0.00243-0.0634W×cm,研究了电参数对金刚石厚膜电火花加工表面粗糙度和材料去除速率的影响,结果表明二者都随着峰值电流和脉冲宽度的增大而增大。
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  相似匹配句对
     Electro Activation Parameter of Bovine Oocytes
     牛卵母细胞电激活参数的研究
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     Made choice of parameter of Electro-discharge-hardening
     电火花表面强化工艺参数的选择
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     n—Parameter CAPM
     n个参数的资本性资产定价模型
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     Scattering Parameter
     散射参数
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     Electro-Magnetic Metallurgy
     电磁冶金
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In this paper the electro-parameter of high purity GaAs epitaxial layers and their process conditions are reported. The vapor epitaxial growth is obtained in the Ga-AsCl3-H2 reaction system at high water vapor partial pressure (μ4.1 ×10-6atm) and low deposition temperature (650℃). The optimum mobility value at 77°K is 21lOOOcm/s.V and its corresponding peak (44.2°K) is 329000cm/s.V. The 77°K mobility values are generally repeated at 120000-200000cm/s.V. And the high pure materials have an outstanding...

In this paper the electro-parameter of high purity GaAs epitaxial layers and their process conditions are reported. The vapor epitaxial growth is obtained in the Ga-AsCl3-H2 reaction system at high water vapor partial pressure (μ4.1 ×10-6atm) and low deposition temperature (650℃). The optimum mobility value at 77°K is 21lOOOcm/s.V and its corresponding peak (44.2°K) is 329000cm/s.V. The 77°K mobility values are generally repeated at 120000-200000cm/s.V. And the high pure materials have an outstanding characteristic of low compensative ratio. In this paper, the experimental results are briefly discussed too.

本文报道在高水汽压(≈4.1×10~(-5)大气压)、低沉积温度(650℃)下,Ga/AsCl_3/H_2汽相外延系统生长的高纯外延层的实测电参数及其工艺条件。77°K下的迁移率最佳值为211000cm_2/s.V,(44.2°K下)的相应峰值迁移率μ_(max)为329000cm_2/s.V。77°K下的迁移率一般可在120000~200000cm_2/s.V之间重复。高纯外延层还具有低补偿比的突出特点。文中对实验结果也进行了初步讨论。

The material will summarily analyse the difficulties about the large scale Vertical-vibratory conveyor with electro-magnetic drive, and will point-out a method for solve this problem is to reduce working frequency range suitablly and to raise the Surge power-range supplied by area of permagnetic pole after lower the frequency range. For this reason there is a way introduced which can solve the control plane of supply electricity and the calculation of design for electro-parameter. By the end...

The material will summarily analyse the difficulties about the large scale Vertical-vibratory conveyor with electro-magnetic drive, and will point-out a method for solve this problem is to reduce working frequency range suitablly and to raise the Surge power-range supplied by area of permagnetic pole after lower the frequency range. For this reason there is a way introduced which can solve the control plane of supply electricity and the calculation of design for electro-parameter. By the end of this material the calculation of design for motionalography parameter and poweredgraphy parameter of the large-scale vertical-vibratory conveyor with electro-magnetic drive will be introduced. It will recommend some of select range of motionalography parameter

本文概略分析了电磁振动提升机大型化的团难,指出解决的办法在于适当降低工作频率并设法提高降频后单位磁极面积所提供的激振力幅,进而介绍了一种可实现上述目标的供电控制方案及其相应的电参数设计方法。本文还介绍了大型电磁振动提升机运动学参数和动力学参数的设计计算,推荐了一些运动学参数的选择范围。

7 irradiation damage of photo -diodes and photo - transistors has been studied. The irradiation doses were 104, 105 and 106Gy(Si), respectively. The experimental results showed that the light current Ip, current amplification factor β and response time to photo -devices were all decreased while dark current Id increased and junction capacitance C unchanged basically. After 72 h of annealing at 180 ℃ ,the electro - parameters of the photo -devices stored for 180 days were not well restored, which...

7 irradiation damage of photo -diodes and photo - transistors has been studied. The irradiation doses were 104, 105 and 106Gy(Si), respectively. The experimental results showed that the light current Ip, current amplification factor β and response time to photo -devices were all decreased while dark current Id increased and junction capacitance C unchanged basically. After 72 h of annealing at 180 ℃ ,the electro - parameters of the photo -devices stored for 180 days were not well restored, which indicated that 7 irradiation would induce not only instant but also partially permanent damage.

研究了光敏二极管和三极管经反应堆γ辐照后(辐照剂量为10~4、10~5 和10~6Gy(Si))引起的损伤。结果表明,γ辐照使光敏器件的光电流 I_p、电流放大倍数β和光电响应时间t减小,暗电流I_d增加,结电容C基本不变。被辐照器件放置180d 后,又经180℃温度退火72h,所测光电参数并未得到复原。这说明γ辐照除造成瞬时损伤外,还会引起部分永久性损伤。

 
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