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secure
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  “secure”译为未确定词的双语例句
    Secure Communication with Parameter Modulation of Acousto-optical Bistable Chaotic System
    声光双稳态混沌系统参数调制通信
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    Efficient hardware architecture for secure hash algorithm SHA-1
    快速实现SHA-1算法的硬件结构
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    4. The Secure Digital memory card interface IP module is built by using hierarchy design method.
    4.实现了符合SD协议标准的接口IP模块的设计。
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    3)digital post-processing introduces secure hash arithmetic(SHA-1),which betters the statistic property of output of the random number generator;
    3)采用SHA-1算法对采样数据进行杂化处理,改善输出的统计属性;
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    So to keep data secure, only encrypting data is far of enough, the process and carrier of encryption operation must be studied to resist all kinds of tamper that may arise.
    因此光对数据进行加密对数据的保护是远远不够的,我们必须对数据加密的过程和载体即芯片电路进行研究来防范各种可能出现的攻击。
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  secure
A secure model for mobile agent based on encrypted circuit construction
      
A dynamic, secure, and efficient group key agreement protocol
      
The key challenge of dynamic peer communication is how to realize secure and efficient group key management.
      
The protocol is proven secure against passive attack by using indistinguishable method.
      
By checking whether these variables are influenced by outside inputs, the database operations are proved to be secure or not.
      
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In this paper a ion plating experimental set with DC diode type is described. Using a supplementary electron beam device and a copper meshes as cathode,a more secure and durable Te thin film is made on glass substrate.

本文描述了直流二极型离子镀膜袋置。采用了一个附加电子束机构和作为阴极的铜网。在玻璃基板上制得了牢固的Te薄膜。

The interface states in the native oxide film on silicon epitaxial layer cause the C-V characteristics of mercury-silicon contacting Schottky diode to depart from the ideal condition and make a great error in measurement of the profile of impurities in P/P~+epitaxial layer.The existence of the interface states may be judged by the fact that when the forward bias voltage is equal to the O.6v bult-in voltage the value of the normalized capacitance is evidently apart from the flat band capacitance counting from...

The interface states in the native oxide film on silicon epitaxial layer cause the C-V characteristics of mercury-silicon contacting Schottky diode to depart from the ideal condition and make a great error in measurement of the profile of impurities in P/P~+epitaxial layer.The existence of the interface states may be judged by the fact that when the forward bias voltage is equal to the O.6v bult-in voltage the value of the normalized capacitance is evidently apart from the flat band capacitance counting from the concentra- tion of impurities in eptaxial layer and the thickness of the native oxide film.After the sample has been dipped into chemical pure fluorhydric acid for 7 minutes,the density of the interface states can be reduced.Then the C-V measurement can be made to secure the precision of the results of the measurement.

硅外延层上的自然氧化层中的界面态,使汞—硅接触肖特基二极管反向偏置 C—V 特性偏离理想情况,给外延层杂质纵向浓度分布测定带来较大误差。当正向偏置电压为自建电势0.6V 时的归一化电容值如果明显偏离按外延层杂质浓度和自然氧化层厚度计算出来的平带电容值,就判明有界面态存在。将样品在化学纯氢氟酸中漂洗7分钟以上即可使界面态减少到不可察觉的程度,然后再进行 C—V 测量,可保证测定结果的正确性。

Capped and capless annea ing of Si+ -implanted semi-insulating InP crystals have been investigated. Results indicate that ths Si+ -implanted InP samples capped with SiO2 film begin to crack at 580℃, but can not be activated until 750℃, and that in capless thermal annealing (covered with PSG), the surfaces of samples remain bright and clean at 720-750℃, the electrical activity ranges from 30 to 95%, the highest Hall mobility can reach to 1900cm2/V·s, and the lowest sheet resistivity is 203Ω/□·In the experiments,...

Capped and capless annea ing of Si+ -implanted semi-insulating InP crystals have been investigated. Results indicate that ths Si+ -implanted InP samples capped with SiO2 film begin to crack at 580℃, but can not be activated until 750℃, and that in capless thermal annealing (covered with PSG), the surfaces of samples remain bright and clean at 720-750℃, the electrical activity ranges from 30 to 95%, the highest Hall mobility can reach to 1900cm2/V·s, and the lowest sheet resistivity is 203Ω/□·In the experiments, very pure argon as protsctives gas is more convenient and secure than hydrogen.

半绝缘InP单晶离子注入硅后,进行了包封与无包封热退火研究。结果表明:用SiO_2膜作包封层的注Si~+InP样品在热退火温度达580℃时开始龟裂,而退火温度高达750℃才能开始激活。用磷硅玻璃作盖片的无包封热退火,在720~750℃范围样品表面光亮,激活率为30~95%,霍耳迁移率最高可达1900cm~2/V·s,薄层电阻最低可达203Ω/□。实验中采用高纯氩气作为保护气体,比传统使用的氢气安全、简便。

 
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