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glass phase
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  玻璃相
    The machanism described above is apparently different with the single physical machanism of poly-crystal Al_2O_3 ceramic which depends upon glass phase penetrating into crystal boundary, though it has no crystal boundary, it can also reach tight strong metallized sealing.
    它与多晶Al_2O_3瓷靠玻璃相渗透到晶界中的单纯物理机理有着明显的不同,因此,它虽无晶界,但同样能获得高强度高气密的金属化封接。
短句来源
    This paper reports the particle size effect on the resistance and TCR of Ta-doped Ru-base thick film resistor, which occurs when the particle sizes of two phases reach critical values (conductive phase ≈ 25nm, glass phase ≈ 50nm). And it can be explained qualitatively with the conduction mechanism of thick film resistor.
    本文报道了钽掺杂钌基厚膜电阻制备过程中导电相和玻璃相颗粒尺寸效应的实验研究结果。 当导电相和玻璃相颗粒尺寸分别达到25和50nm时,电阻阻值和电阻温度系数也随之发生显著变化,并尝试根据厚膜电阻导电机理对其产生的原因进行定性的分析。
短句来源
  “glass phase”译为未确定词的双语例句
    The high frequency temperature-stable system was obtained by adjusting Nb/Ta ratio and synthesizing precursor in advance. The effects of dopants Bi2O3、Sb2O5、MnO2 and glass phase on the properties of the ANT and ANNT system were investigated.
    详细研究了改性添加剂Bi2O3、Sb2O5、MnO2以及玻璃相对该系统介电性能的影响,研究表明适当的的掺杂可以有效改善系统的烧结性能和介电特性。
短句来源
    Effect of Glass Phase on High Temperature Stability of Thick Films in Tungsten System
    钨系厚膜材料中玻璃相对高温稳定性的影响
短句来源
    Experiments show that the expansion coefficient of the resistor paste would be influenced by the conductive phase, glass phase, additives, etc When the difference of the expansion coefficient of the paste and that of the LTCC substrates goes larger to a certain degree, the stability of thick film resistors, at room temperature, would be affected X ray diffraction shows that the cause that affects the stability is the cristobalite grown between the resistors and the substrate (8 refs)
    当厚膜电阻浆料的热膨胀系数与LTCC基板的热膨胀系数之差异大到一定程度时,厚膜电阻在常温下的稳定性就会受到影响。 X射线衍射图谱说明,厚膜电阻与LTCC基板之间生成的方石英相会降低厚膜电阻在常温下的稳定性。
短句来源
    In view of the effect of glass phase transition temperature(t_g)on material properties,three-dimensional finite element method has been employed in analyzing the warpage of single chip and multi-chip molding.
    考虑玻璃态转变温度(tg)对材料性能的直接影响,运用三维有限元分析法分别对单芯封装器件及多芯封装器件由于热变形引起的翘曲问题进行了分析,同时着重探讨了封装器件中各种材料的尺寸变化对翘曲的影响.
短句来源
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  glass phase
Nontrivial interference develops between the subsystems when (for certain values of the parameters) they can only slide into the spin-glass phase.
      
It is found that a transition to the dipole-glass phase with chaotic, spontaneous unit-cell dipole moments, characterized by the Edwards-Anderson nonlocal parameter, precedes the transition to the ferroelectric phase.
      
The theory predicts the appearence of stable fluctuon states in both the mixed ferroelectric-dipole-glass phase (a dipole glass is the electric analog of a spin glass) and the dipole-glass state of disordered ferroelectrics.
      
While the former phase possesses only a trivial fixed point, this point become unstable in the latter phase, which may be interpreted as a spin glass phase.
      
Nematic LC to nematic glass phase transition in pores
      
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This peper mainly describes that gemstone——Al_2O_3 single crystal can be metallized by sintering metal powder process and its metallized sealing characteristic is better than that of poly-crystal Al_2O_3 ceramic. The machanism that gemstone——Al_2O_3 is metalized by activating Mo-Mn is also described concisely. The machanism described above is apparently different with the single physical machanism of poly-crystal Al_2O_3 ceramic which depends upon glass phase penetrating into crystal boundary, though it...

This peper mainly describes that gemstone——Al_2O_3 single crystal can be metallized by sintering metal powder process and its metallized sealing characteristic is better than that of poly-crystal Al_2O_3 ceramic. The machanism that gemstone——Al_2O_3 is metalized by activating Mo-Mn is also described concisely. The machanism described above is apparently different with the single physical machanism of poly-crystal Al_2O_3 ceramic which depends upon glass phase penetrating into crystal boundary, though it has no crystal boundary, it can also reach tight strong metallized sealing.

本文主要介绍宝石—Al_2O_3单晶同样可以采用烧结金属粉末法金属化,并获得优于多晶Al_2O_3瓷的金属化封接性能。同时还简要阐述了此种宝石活化钼锰法金属化机理。它与多晶Al_2O_3瓷靠玻璃相渗透到晶界中的单纯物理机理有着明显的不同,因此,它虽无晶界,但同样能获得高强度高气密的金属化封接。

This paper reports the particle size effect on the resistance and TCR of Ta-doped Ru-base thick film resistor, which occurs when the particle sizes of two phases reach critical values (conductive phase ≈ 25nm, glass phase ≈ 50nm). And it can be explained qualitatively with the conduction mechanism of thick film resistor.

本文报道了钽掺杂钌基厚膜电阻制备过程中导电相和玻璃相颗粒尺寸效应的实验研究结果。当导电相和玻璃相颗粒尺寸分别达到25和50nm时,电阻阻值和电阻温度系数也随之发生显著变化,并尝试根据厚膜电阻导电机理对其产生的原因进行定性的分析。

Experiments show that the expansion coefficient of the resistor paste would be influenced by the conductive phase, glass phase, additives, etc When the difference of the expansion coefficient of the paste and that of the LTCC substrates goes larger to a certain degree, the stability of thick film resistors, at room temperature, would be affected X ray diffraction shows that the cause that affects the stability is the cristobalite grown between the resistors and the substrate (8 refs)

目前国内尚缺乏与LTCC相配套的厚膜电阻浆料。实验证明,厚膜电阻浆料的导电相、玻璃相及添加剂等对LTCC基板表面厚膜电阻在常温下的稳定性有一定影响。厚膜电阻浆料的膨胀系数随其导电相、玻璃相及添加剂的组分的变化而变化。当厚膜电阻浆料的热膨胀系数与LTCC基板的热膨胀系数之差异大到一定程度时,厚膜电阻在常温下的稳定性就会受到影响。X射线衍射图谱说明,厚膜电阻与LTCC基板之间生成的方石英相会降低厚膜电阻在常温下的稳定性。

 
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