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electronic grade
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  电子级
     Comparative Research on Physico chemical Properties of Domestic BaCO 3 and TiO 2 of Electronic Grade
     国产电子级BaCO_3及TiO_2理化特性的比较研究
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     A method for preparing Mn 3O 4 of electronic grade from microcrystal electrolysis dioxide manganese (EMD) is reported.
     提出用微晶电解MnO2 制备电子级Mn3 O4的方法 .
短句来源
     Study on the preparation of electronic grade hydrogen peroxide
     电子级过氧化氢的制备研究
短句来源
     The Improvement of the Technology for Electronic Grade Rutile TiO 2
     电子级金红石型TiO_2生产工艺的改进
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     The Technological Development Status of Electronic Grade Glassfiber Cloth
     电子级玻璃纤维布的技术发展新动态
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  “electronic grade”译为未确定词的双语例句
     RESEARCH OF HIGHEST DEGREE PURE AND SUPER-FINE SIO_2 POWDER FOR ELECTRONIC GRADE
     电工级高纯超细SiO_2粉研究
短句来源
     An ion chromatographic method for determination of trace quantoty of anions in electronic grade water, high purity gases, e. g. N2, H2, O2, Ar and He;
     本工作建立了高纯水、高纯气(N_2、H_2、O_2、Ar、He);
短句来源
     Technologies of serial esters of hydrogenated rosin,including methyl ester,ethyl ester,glyc-erol ester,pentaerythritol ester,ethylene glycol,food grade esters and electronic grade esters,were developed in China.
     提出氢化松香酯类系列产品——甲酯、乙酯、甘油酯、季戊四醇酯、乙二醇酯、食品级松香酯、电子工业级松香等制备工艺。 利用副产品制成显微镜用浸油。
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     Based technology optimization of SSP made by electronic grade silicon powder, this paper also discussed the practical possibility of industrialization.
     本文在工艺优化的基础上同时讨论了颗粒硅带制备工艺的产业化可行性。
  相似匹配句对
     grade.
     级;
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     The Production Technology of Electronic Grade Polycrystalline Silicon
     电子级多晶硅的生产工艺
短句来源
     Study on the preparation of electronic grade hydrogen peroxide
     电子级过氧化氢的制备研究
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     The Electronic Wallet in
     电子钱包在中国:割据何日归一统?
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     On Electronic Book
     电子图书初探
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  electronic grade
Solderability was evaluated for four Pb-free alloys: 95.5Sn-4.3Ag-0.2Cu (wt.%), 95.5Sn-4.0Ag-0.5Cu, 95.5Sn-3.9Ag-0.6Cu, and 95.5Sn-3.8Ag-0.7Cu on oxygen-free electronic grade (OFE) Cu and Au-Ni plated Kovar substrates.
      
The problems associated with the purity of electronic grade triethylindium (TEIn) are addressed.
      
The activity coefficient of calcium in dilute silicon solutions was measured by equilibrating a CaO-SiO2 slag, at silica saturation, with electronic grade silicon, inside a vitreous silica crucible, heated at 1823 K (1550 °C) and 1923 K (1650 °C).
      
Three new methods for large scale synthesis of electronic grade trimethylgallium and trimethylindium are presented.
      
Determination of trace impurities in electronic grade quartz: Comparison of inductively coupled plasma mass spectroscopy with ot
      
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ZnSe is one of the promising materials in application to blue light emitting diodes because of its wide direct band gap. Many papers on MIS[1,2] and p-n[3] structure blue EL devices of ZnSe bulk single crystal have been reported. Recently, low temperature growth techniques such as MOCVD[4], MBE[5]and VPE[6,7]are of particular interest. Usually these undoped ZnSe epilayers are of low resistivity. The conductivity in undoped ZnSe epilayers may originate from native donors or extrinsic donor impurities .In this...

ZnSe is one of the promising materials in application to blue light emitting diodes because of its wide direct band gap. Many papers on MIS[1,2] and p-n[3] structure blue EL devices of ZnSe bulk single crystal have been reported. Recently, low temperature growth techniques such as MOCVD[4], MBE[5]and VPE[6,7]are of particular interest. Usually these undoped ZnSe epilayers are of low resistivity. The conductivity in undoped ZnSe epilayers may originate from native donors or extrinsic donor impurities .In this paper, it is reported that the photoluminescence and electrical properties of ZnSe epilayers grown on (100)-GaAs are influenced by the purity of source materials, and suggested that the conductivity in normally undoped VPE ZnSe was attributed to the extrinsic donor impurities which originated in the contamination of the ZnSe source materials rather than in the native donors or Ga outdiffused from the substrate of GaAs when the growth temperature is low (Tsub = 500℃).The details of the VPE ZnSe growth have been described elsewhere . The substrate temperature was Tsub = 450℃, and the source temperature Tsob = 830℃. H2 served as the transport gas, As-grown ZnSe epilayers were treated in Zn vapor at 650℃ for 14hr.Following source materials have been used:(A)ZnSe particle(electronic -grade),(B) ZnSe powder (analysis purity). Sources A and B were refined by means of sublimation in an evacuated, open chamber for two cycles. The refined sources are expressed as A1, A2 and B1, B2 for each cycle respectively. And the sources A2 and B2 were purified by sublimation in an evacuated and closed chamber for three cycles. The refined sources are expressed as A3,A4 and B3,B4,Bs for each cycle respectively. In the following, 1 to 5 serve as the number of purification cycles.Fig.1 shows the PL spectra of ZnSe epilayers grown with sources A1 →A4. The spectrum from the sample with source A shows a dominant free to bound (FB) emission and a weak Es band which is related to the recombination of free excitons[1] and also a weak deep center emission. when the source was purified, the deep center emission disappeared and the Es band became intense.As a comparison, Fig. 2 shows the PL band edge emission spectra from (a) ZnSe epilayer with source A4 and(b) bulk ZnSe crystal. The intensity ratio IE(?)/IFB is 0.42 for ZnSe epilayers and 0.26 for bulk ZnSe respectively.Fig. 3 shows the PL spectra from the ZnSe epilayers with sources B→ B5. The spectrum with source B shows only a strong deep center emission and no band-edge emission was detected. When the source B was refined for one cycle (source B1), the deep center emission disappeared and FB and E, band appeared. The FB band became narrow and Es band became intensive with increasing the purification cycles.Fig. 4 shows the dependence of the carrier concentration (N), the electron mobility (μ) and the resistivity (ρ) of the ZnSe epilayers with source B on the purification cycles. ρand μ increase and N decreases with increasing the purification cycles.Stutius[4] has reported that normally undoped MOCVD ZnSe epilayers had a high resistivity. Fujita [16,17] et al. have, however, reported that the undoped MOCVD ZnSe epilayers were of low resistivity. Their growth conditions, such as substrate temperature and the rate of [DMZ]/[H2Se], are similar to each other. T. Yao et al. [8,9] have reported that undoped MBE ZnSe was of low resistivity. They suggested that the conductivity should originate from native donors rather than the outdiffused Ga from the substrate of GaAs. Yoned et al. [10] have reported that the opitical and electrical properties of undoped MBE ZnSe epilayers were remarkably dependent on the purity of the Se source material. The resistivity increased with increasing purification cycles of Se source.From the results that the resistivity of ZnSe epilayers increases and Es band becomes intense with increasing purification cycles (Fig.1, Fig. 3 and Fig. 4), we suggested that the conductivity in normally undoped VPE ZnSe was attributed to extrinsic donor impurities which originated

本文叙述了原料纯度对ZnSe外延膜的发光和电学性能的影响。随原料纯度提高,ZnSe外延膜的电阻率增大,同时PL光谱中与自由激子发射有关的E_s带不断增强。这就表明,在我们实验条件下,ZnSe外延层的电导载流子主要来自于原料中施主杂质的污染而不是本征施主,当衬底温度较低时,原料中施主杂质的污染要比衬底中的Ga自扩散重要得多。随着原料纯度的提高,ZnSe外延膜电阻率增加,正是由于原料中施主杂质的减少。

With the development of very large scale integrated circuits in the semiconductor industry, how to make the purity of ultra pure water, an important basic material, meet the standard of the Electronic Grade (Grade I )has become a pressing technical problem in the ultra-pure water treatment. This paper introduces specifically the process and equipment characteristics of the Elga's fully-automated ultra-pure water treatment system. Finally, the specifications of quality for the ultrapure water from...

With the development of very large scale integrated circuits in the semiconductor industry, how to make the purity of ultra pure water, an important basic material, meet the standard of the Electronic Grade (Grade I )has become a pressing technical problem in the ultra-pure water treatment. This paper introduces specifically the process and equipment characteristics of the Elga's fully-automated ultra-pure water treatment system. Finally, the specifications of quality for the ultrapure water from this system are given.

在集成电路工业已经进入超大规模集成电路时代的今天,如何使超纯水这一重要基础材料的纯度达到电子级Ⅰ级水准,已成为我国净化技术中超纯水处理领域一个急待解决的技术问题。本文专题介绍英国ELGA公司全自动超纯水处理系统工艺流程和设备的特点,最后介绍了该系统生产的超纯水所达到的质量指标。

An ion chromatographic method for determination of trace quantoty of anions in electronic grade water, high purity gases, e. g. N2, H2, O2, Ar and He; special gases, e. g. SiH4, PH3, CO2, HC1 and CH4; various kinds of resins, plastics, reverse osmosis membranes and ultrafiltration membranes has been proposed. The detection limit is 0.1, 0.05, 0.5. 0.5, and 0.1 ppb for F-, Cl-, NO3-, HPO42- and SO42-, respectively.In this study the anion analytical method with detection limit lower than 0.5 ppb without...

An ion chromatographic method for determination of trace quantoty of anions in electronic grade water, high purity gases, e. g. N2, H2, O2, Ar and He; special gases, e. g. SiH4, PH3, CO2, HC1 and CH4; various kinds of resins, plastics, reverse osmosis membranes and ultrafiltration membranes has been proposed. The detection limit is 0.1, 0.05, 0.5. 0.5, and 0.1 ppb for F-, Cl-, NO3-, HPO42- and SO42-, respectively.In this study the anion analytical method with detection limit lower than 0.5 ppb without using concentration coloum is reported for the first time.A rapid, reliable and accurate ion chromatographic method has been established and adopted as a National arbitration method for Electronic grade water standard.

本工作建立了高纯水、高纯气(N_2、H_2、O_2、Ar、He);特种气体(硅烷、磷烷、二氧化碳、氯化氢、甲烷)以及硅片,高纯水用的各种树脂、塑料,各种反渗透膜、超过滤膜中阴离子分析方法,对于F~-,Cl~-,NO_3~-,HPO_4~(2-)及SO_4~(2-)检测限分别为0.1,0.05,0.5,0.5,0.1ppb,并建立了半导体工艺废水中NH_4~+、NO_2~-、SO_3~(2-)、Br~-、CN~-和AsO_4~(3-)等离子的分析方法。用自制的小容积、灵敏度高的电导检测器以及自制的大体积定量管,代替了引进件。并改进了检测系统, 增加反压装置,降低了基线噪声,设计并制造了一套膜过滤及溶液吸收联用的气体采样装置,采用一次直接进样,大大提高了检测灵敏度(3倍),降低了检测限,从而首次成功的将这一分离技术应用在半导体工艺中,在国内外首次实现测定≤0.5ppb级超痕量阴离子不采用浓缩柱的技术,建立了快速、灵敏、可靠性强的离子色谱分析的新方法。 目前已为全国85个单位检验各种水质、原材料、气体等。该方法已定为中华人民共和国电子级水国家标准方法的仲裁方法。

 
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