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metal semiconductor
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  金属半导体
     The article proposed a new method to realize the precise measurement for temperature from very long distance. It provides forward current for PN or metal semiconductor junction sensor by unequal amplitude current pulse alternately,keeps functional operation and sampling hold,and gains the testing result that has nothing with transmission lines.
     本文提出了一种实现远程精密温度测量的新原理,采用不等幅度电流脉冲交替向PN结或金属半导体结温度传感器提供正向工作电流,经过采样保持相关运算,获得与传输线无关的测量结果。
短句来源
     Metal PTC ceramic composite materials were prepared by the standard solid state reaction method. This composite behaved negative temperature coefficient of resistance(NTC) which is caused by the image force decreasing the height of metal semiconductor Schottky barrier.
     报道了用传统固态烧结工艺制备的金属 PTC陶瓷复合材料的NTC现象 ,研究结果表明这种NTC现象是由于镜像力作用导致金属半导体肖特基势垒高度减低所致。
短句来源
     The circuit design and fabricating process of long wavelength monolithically integrated photoreceiver using metal semiconductor metal(MSM) InGaAs photodetector and InAlAs/InGaAs high electronic mobility transistor(HEMT) are presented. The compatibility of the process is discussed. As a result, a prototype of long wavelength monolithically integrated photoreceiver is demonstrated under a transmitting rate of 2.5 Gb/s.
     介绍了利用InGaAs长波长金属 半导体 金属 (MSM )光探测器与InAlAs/InGaAs高电子迁移率晶体管 (HEMT)集成来实现长波长单片集成光接收机的材料和电路设计、关键工艺途径等 ,解决了工艺兼容性问题 ,实现了 2 .5Gb/s传输速率下功能正确的单片集成长波长光接收机样品
短句来源
     Metal nano oxidation wires (such as Ti, Al, Nb) obtained by AFM tip induced anodic oxidation are the basic structures in metal semiconductor nano devices. The amount of adsorbed water on the metal film surface determined by ambient humidity plays a key role in controlling the oxidation results.
     AFM针尖诱导氧化加工的金属 (Ti、Al、Nb等 )纳米氧化线是实现金属 半导体纳米器件的基础 ,由大气湿度决定的金属膜表面水吸附层的厚度 ,对控制阳极诱导氧化加工的结果起重要作用。
短句来源
  金属-半导体
     The structure of the detector is made of metal semiconductor metal. Major geometric dimension of these detector are:the length of the strip is 17mm,and the width of them are of 20,50,100,200,300μm,respectively.
     该探测器结构采用金属 -半导体 -金属结构 ,其主要几何尺寸是 :微条长度为 17mm ,宽度分别为 2 0、5 0、10 0、2 0 0、30 0μm .
短句来源
     The temperature of metal semiconductor transition, T _ tran, decreases, and the peak value of resistance increases with increasing Ca vacancies. The temperature dependence of the resistance above metal-semiconductor transition temperature is simulated based on the polaron-resistance model.
     材料的金属 -半导体转换峰值温度 Ttran随 Ca缺位程度的增加相应减小而电阻峰值却增大 ,作者用极化子电阻模型拟合了金属 -半导体转换峰温度 Ttran以上的电阻温度依赖关系 ,发现 Ca缺位材料电阻的增大可能与局域波函数的衰减长度减小有关。
短句来源
     The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.
     分析模拟结果表明 ,由于肖特基效应形成的金属 -半导体接触势垒的降低 ,会在很大程度上影响金属 -半导体接触的输运特性
短句来源
     INTERFACES OF METAL SEMICONDUCTOR CONTACTS AND SCHOTTKY BARRIER
     金属-半导体界面与肖特基势垒
短句来源
     By using transmission line matrix method, the simulation and analysis for frequency response of interdigital capacitors in metal semiconductor metal photodetector is described.
     介绍了利用传输线矩阵方法模拟和分析金属 -半导体 -金属光电探测器指栅电容的频率响应。
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  “metal semiconductor”译为未确定词的双语例句
     LARGE PIEZORESISTANCE AND PRESSURE INDUCED METAL SEMICONDUCTOR TRANSISTION IN THE PEROVSKITE LIKE La Ar Mn O
     LARGE PIEZORESISTANCE AND PRESSURE-INDUCED METAL-SEMICONDUCTOR TRANSISTION IN THE PEROVSKITE-LIKE La-Ar-Mn-O
短句来源
     THE PREPARATION AND MICROSTRUCTURE STUDY OF NANO METAL SEMICONDUCTOR FILM Cu∶CdS
     金属颗粒-半导体膜Cu:CdS的制备及结构研究
短句来源
     Ten barrier heights of metal semiconductor contacts are calculated by taking the average bond energy as the reference level.
     以平均键能Em 作为参考能级 ,计算了 10种不同半导体的Schottky接触势垒高度 ,计算值与实验值符合较好 .
短句来源
     With these excellent figure of merits of SiC, the great attention was paid on 4H-SiC MESFET (metal semiconductor field effect transistor) .
     因此基于4H-SiC的功率微波器件——金属半导体场效应晶体管(MESFET)受到了人们的极大关注与重视。
短句来源
     As a result, the GaAs metal semiconductor field effect transistors (MESFET) with the transconductance of 100 mS/mm have been fabricated, which can bemonolithically integrated with long wavelength optical components.
     并制出GaAs金属半导体场效应晶体管(MESFET),其单位跨导为100mS/mm,可满足与长波长光学器件进行单片集成的需要。
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  metal semiconductor
Taken together, the data indicate that oxidizing species diffuse through noble metal contacts to the metal/semiconductor interface and passivate electrically active defects, which may be reactivated upon mild anneals in N2.
      
Mild anneals revealed that the environmental change was partially reversible, which suggests the passivation of electrically active defects at the metal/semiconductor interface as the cause of the altered diode behavior.
      
Two findings further suggested that the change in electrical characteristics was due to a phenomenon occurring at the metal/semiconductor interface.
      
High-quality schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance
      
The effect of MeV and low energy nitrogen implantation on the electrical properties of metal semiconductor junctions is studied.
      
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The excitonic superconductor proposed by Allender, Bray and Bardeen is a kind of Layered Ultrathin Coherent Structure (LUCS) composed of metal and semiconductor layers. In a previous work, we have studied the electronic structure of a metalme-tal LUCS in the tight binding approximation. We present here the result of a similar study of a metal-semiconductor LUCS, with the hope that it may be helpful to more detailed further investigations of the ABB model of superconductivity.

Allender,Bray和Bardeen建议的激子超导体是由金属和半导体构成的一种多层超薄共格结构(LUCS)。我们曾经在紧束缚近似下,用格林函数技术,研究了金属-金属LUCS的电子结构。本文是按相似的方法对于金属-半导体LUCS进行的计算和结果。所获得的电子结构可有助于详细地研究ABB模型的超导体。

Molecular Beam Epitaxy (MBE) technique, based on its unique features, has been in several respects developing spectacularly in the recent decade. Six basic aspects of MBE are reviewed in this article. the current level of MBE material (GaAs. Si and InGaAsP etc.) can be compared with LPE's and VPE's. The study of MBE reaction kinetics is developing on to study ternary and quarternary alloys. It is necessary to solve the problem of doping for fabricating device-grade MBE material. Until recently Si and Be are...

Molecular Beam Epitaxy (MBE) technique, based on its unique features, has been in several respects developing spectacularly in the recent decade. Six basic aspects of MBE are reviewed in this article. the current level of MBE material (GaAs. Si and InGaAsP etc.) can be compared with LPE's and VPE's. The study of MBE reaction kinetics is developing on to study ternary and quarternary alloys. It is necessary to solve the problem of doping for fabricating device-grade MBE material. Until recently Si and Be are the favored dopants for MBE n-type and p-type GaAs respectively. A number of microwave devices, lasers and photo-electronical devices have been successfully fabricated with MBE technigue. Threshold current density of MBE GaAs/AlGaAs DH laser which has been obviously improved can compare with the flowest level of LPE's. The study of MBE metal-semiconductor and insulator-semiconductor heterojunction, the study of their property, as well as the surface study of MBE film have been developed. Two series of superlattice of GaAs/AlGaAs and InAs/GaSb are described. Modulating of doping structure opens up a new field for developing twodemension electronics.

近十年来,分子束外延技术(简称MBE)以其独特的优点在多方面取得了令人注目的发展。本文从六个方面讨论了MBE技术目前的发展情况。MBE GaAs、Si和InGaAsP等材料的水平已可与VPE和LPE的相比。MBE生长动力学的研究已进展到对三元,四元混晶进行研究。研制器件级材料必须解决掺杂问题,Be和Si分别是MBE GaAs比较好的P型和N型掺杂剂。MBE已成功地研制出多种微波、激光和光电器件,GaAs/AlGaAs双异质结激光器的阈电流密度已降低到可和LPE的最低值相比。MBE金属-半导体,绝缘体-半导体异质结及其界面特性的研究和MBE薄膜表面的研究都有所发展。讨论了GaAs/GaAlAs和InAs/Gasb二个系列的超晶格。调制掺杂结构开辟了发展二维电子学的新途径。

Recently much attention has been paid to the study in blue LEDs of ZnS. In order to make efficient LEDs of ZnS, a basic problem, i.e.the reproducible preparation of low-resistivity bulk materials must be solved.In this paper, we present a method to produce low-resistivity ZnS:I crystals end discuss the influence of iodine concentration in ZnS:I crystals on annealing condition.ZnS single crystals studied in this work were grown by I-chemical vapor transport.The crystals were cut into slices 1.5mm thick.After...

Recently much attention has been paid to the study in blue LEDs of ZnS. In order to make efficient LEDs of ZnS, a basic problem, i.e.the reproducible preparation of low-resistivity bulk materials must be solved.In this paper, we present a method to produce low-resistivity ZnS:I crystals end discuss the influence of iodine concentration in ZnS:I crystals on annealing condition.ZnS single crystals studied in this work were grown by I-chemical vapor transport.The crystals were cut into slices 1.5mm thick.After chemical cleaning and etching, they were heated in a molten mixture of Zr-Al (1.5-2%) in a sealed quartz ampoule which was coated by careen film for 40-100 hours at 950℃ and then were quenched immediately in cold water.Both faces of samples were lightly polished and toiled in a solution of 25% NaOH-in-H2O for 30-60sec and then washed in hot deionized water.The chmic contacts were made by heating In-Ga alloy in N2 flow at 400℃ for 5-10 min. The resistivity of samples were mesured by Van der Pauw method of from I-V characteristics.ZnS: I crystals usually shew different bulk colour. According to difference of the bulk colour,ZnS:I crystals can be divided into three kincis:A--Colourless and transparent;B--Yellowish and C--Yellow.Chemical analysis shows that their I concentration is 45,100 and 130 ppm respectively.It is identified that the bulk colour of crystals is correlated with iodine concentration in the crystals. The higher the iodine concentration,the darker the bulk colour.It is found that different annealing conditions are needed for ZnS:I crystals with different bulk colour in order to obtain the same resistivity.Having taken suitable annealing condition,Al concentration in ZrS:I crystals can be controled at the order of 10-3g/g and the resistivity of ZnS: I slices can be reduced down to 10-102 .cm.The MS(metal-semiconductor) junction made by the low-resistivity ZnS crystals can produce blue EL. The emission peak is located at about 4500A at room temperature. Finally,the influence of iodine on Al diffusion was discussed by means of volume compensation principle.In general,iodine ions enter into ZnS crystals at the substitution site and yet the ion radius of iodine is bigger than sulphur ion. On the other hand,aluminum ion is smaller than zinc ion. So Al ions occupy more easily those vacancies which are the nearest neighbors of the iodine ions during annealing.That is,doping of iodine ion may influence on Al ion diffusion to a certain degree. Therefore under the same annealing conditions, for a higher iodine concentration in ZnS crystals,a large amount of Al can be incorporated in the lattice.It is concluded that the diffusion of Al impurity have not only a connection with annealing condition and Zn-Al alloy composition but also with the iodine concentration in ZnS crystals. Different annealing conditions are needed for ZnS: I crystals with different iodine concentration(i.e. different bulk collour) o obtain same low resistivities.

本文叙述了对碘化学输运法生长的ZnS:I单晶扩散Al杂质,制备低阻ZnS:I晶体的实验方法。在制备低阻ZnS:I单晶过程中,根据晶体内含I的浓度选择热退火条件,可较重复地得到Al浓度在10~(-1)g/g量级,电阻率在10—10~2Ω·cm范围的低阻ZnS单晶。讨论认为,在ZnS:I单晶退火过程中,I的存在有助于Al杂质的扩散。

 
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