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gas ion
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  气体离子
     Metal ion can be obtained by cathode spot vacuum arc, and gas ion by gas coellective arc discharge. power: voltage 10-80kV, pulse strength of gas and metal ion 0.25 A and 0.50 A, operabion frequency 10-50Hz, beam spot area 200cm2. In the paper, ion injection application of ion source is described.
     利用阴极斑真空弧可以获得金属离子,利用气体集中弧放电获得 气体离子,引出电压为 10~80kV,气体和金属离子脉冲流强分别为 0.25A 和 0.50A, 工作频率为 10~50 Hz,束斑面积 200 cm2。 本文并对该离子源的离子注入应用做了介 绍。
短句来源
     Abstract Ion beam enhanced technology is an advanced technology, which is used for material surface modification. In this paper, it is introduced that an ion beam enhanced deposition equipment and some utility technologies. The main functions of the equipment include metal ion implanting, gas ion implanting, ion beam enhanced deposition, magnetron sputtering deposition and surface modification of material.
     离子束增强沉积技术是近年在离子注入技术基础上发展的新型材料表面改性技术,本文简要介绍多功能离子束增强沉积设备和应用技术研究,设备具有金属离子注入、气体离子注入、离子束增强沉积、磁控溅射沉积功能,进行材料表面改性和制备各种材料薄膜科学研究。
短句来源
     Technical issues of Ti-N system arc ion coating technology were discussed,relations between processing parameters were analyzed,process design thinking taking the coating temperature as a main parameter was presented,structure and composition of the wear and corrosion resistance film were studied,and gas ion etching technology for increasing sharpness of the arc coated cutting tools was introduced.
     讨论了电弧离子镀Ti-N系涂层制备技术中的几个问题,分析了涂层各工艺参数的相互关系,提出了以镀膜温度为主控参数的工艺设计思路,探讨了耐磨抗蚀复合涂层的结构组成,并介绍了提高涂层刀具锋利度的气体离子刻蚀技术。
短句来源
     A reactive ion plating method and system configuration of Gas Ion source enhanced Magnetron Sputtering ( GIMS) is presented. Especially a new idea of Separate GIMS is first raised to separate in space the MS metallic deposition process and gas ion bombardment chemical reaction process in a vacuum chamber, resulting in the long-time stability, repeatability and consistency in Separate GIMS reactive ion plating process.
     本文介绍了气体离子源增强磁控溅射(气离溅射)反应离子镀膜技术和系统配置,特别是首次提出空分气离溅射的新概念,实现了磁控溅射金属镀膜过程和气体离子轰击化学反应过程在真空室内空间上的分离,从而保证空分气离溅射反应离子镀膜过程的长时间稳定性、重复性和一致性。
  “gas ion”译为未确定词的双语例句
     By using the gas ion source withsingle beam method the precision is ±0.2%, the accuracy is ±0.5%;
     该仪器用气体源单束法测量精密度为±0.2%,准确度为±0.5%;
短句来源
     (2) gas,ion and water regime have various forms of anomalies;
     (2) 气体、离子、水动态异常形态多样;
短句来源
     A method generating Be+ beam current using a gas ion source is presented in this paper. The behaviour of the infrared rapid thermal annealing (IRTA) of the Be+ implanted GaAs is compared with that of the furnace annealing (FA). The pn-junction characteristics of Be+ implanted GaAs and InGaAs have been measured.
     本文报道了在气体离子源中Be~+束流的引出,比较了Be~+注入GaAs的常规炉子热退火与红外快速退火行为,给出了Be~+注入GaAs和InGaAs形成的pn结特性。
短句来源
     TiAN coatings are deposited by cathodic arc ion plating method on 1Cr18Ni9Ti stainless steel. The cathodic arc evaporation apparatus UVNO. 5D2I is made in Russian Academy of Sciences,it has a high power gas ion source and two metal evaporating sources,with the advantages of N2 and Ar ions beams being additional deposition processing and bomb clearing effect.
     采用阴极电弧离子镀技术在1Cr18N i9Ti不锈钢基材上制备TiA lN膜层,镀膜装置为俄罗斯科学院UVN 0.5D2 I电弧离子镀膜机,该设备由一个大功率的气体离子源和两个金属蒸发源组成.
短句来源
     TITAN ion source is a new ion source which can produce strong metal and gas ion beam. Use .
     TITAN离子源是一种新的能够同时产生强金属和气体离子束流的离子源。
短句来源
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  相似匹配句对
     Gas Phase Ion-Molecule Association Reactions
     气相离子-分子缔合反应
短句来源
     Study on gas generation of lithium ion batteries
     锂离子电池气胀问题探析
     Gas Bearings
     气轴承
短句来源
     gas system.
     含气系统。
短句来源
     ION BEEN OXIDATION
     离子束氧化
短句来源
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  gas ion
It is also demonstrated that proton or inert gas ion implantations into C12A7 thin films at elevated temperatures are effective for both H- and electron doping.
      
Calculation of spectroscopic parameters of diatomic van der waals molecules and ions: inert-gas atom-inert gas ion of the haloge
      
The nature of the coordinated ligands affects the ion affinity and the addition site for the reagent gas ion.
      
The observed emission was assigned to the decay of a new class of excited ionic molecules Rg+ A formed by the combination of a rare gas ion Rg+ with an alkali atom A.
      
Interatomic potentials are calculated for the systems inert gas ion in the ground state-inert gas atom Ne+, Xe+-Ne, Ar, Kr, Xe, Fr.
      
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The main modifications of a Type ZhT-1301 Mass Spectrometer intoType ZhT--1301G specially used for solid isotope, aud the measuring resultshave been reported in the present paper. By using the gas ion source withsingle beam method the precision is ±0.2%, the accuracy is ±0.5%; byusing the six bands-places solid source both precision and accuracy arebetter than 0.4%. Using 1 μg simple the intensity of ion current is 10~(-11) Aand can be stabilized for 4 hours or more.

本文介绍了ZhT-1301型同位素质谱计的改进型ZhT-1301G的总体改进和测试结果。该仪器用气体源单束法测量精密度为±0.2%,准确度为±0.5%;用六带位固体源测量精密度和准确度均优于±0.4%,样品为1微克能获得10~(-11)安培的离子流,其稳定时间长达4小时以上。

The effect of Cr, Ta and inert gas ion implantation on the tarnishing resistance of high purity copper in hydrogen sulphide containing atmospheres has been studied using surface reflectance measurements, coulometrie reduction of surface films, scanning electron microscopy and wavelength dispersive analysis of X-rays. The exposure tests were conducted in air containing different levels of H_2S covering the range 0.006 to 6 VPM at 25℃ and 100%RH. Implantation of Cr and Ta markedly improves the tarnishing...

The effect of Cr, Ta and inert gas ion implantation on the tarnishing resistance of high purity copper in hydrogen sulphide containing atmospheres has been studied using surface reflectance measurements, coulometrie reduction of surface films, scanning electron microscopy and wavelength dispersive analysis of X-rays. The exposure tests were conducted in air containing different levels of H_2S covering the range 0.006 to 6 VPM at 25℃ and 100%RH. Implantation of Cr and Ta markedly improves the tarnishing resistance of copper, Xe implantation gives a small improvement and Ar implantation has no effect. Coulometric reduction demonstrates that samples implanted with Cr and Ta have thinner tarnish films and that the composition of these films is different from that formed on unimplantedcopper. Seanningeteetron microscopy combined with WDAX analysis indicates that Cr implantation suppresses the formation of metallic sulphides in tarnish films on copper.

本文用表面光反射,电化学库仑还原、扫描和透射电子显微镜研究了经Cr、Ta和惰性气体离子注入后的高纯铜,暴露在含H_2S大气中的失泽行为。暴露试验是在H_2S浓度为0.006—6VPM,25℃和100%RH条件下进行的。结果表明,Cr、Ta离子注入显著地提高了铜的抗失泽能力,Xe离子注入效果较小,而Ar离子注入无改进效果。阴极还原曲线显示经Cr、Ta离子注入的试样上形成的失泽膜,比未经离子注入铜上形成的膜薄,其结构组成亦不同。电子衍射结构分析和扫描电镜(附WDAX)分析进一步证明,Cr离子注入抑制了铜表面膜中金属硫化物的形成。

Sprengel pycnometers were used for density measurements. The volume of the pycnometers is about 25 ml. The precision of density data is within±0.015kgm~(-3). All measurements have been performed at 25.000±0.001℃.Partial molal volumes of salts in H_2O、 DMF and PC at 25℃ have been reported(Table 1). A method to get ionic partial molal volumes from salt data based on thermodynamic and statistical approximation has been given. Ionic partial molal volumes in H_2O、 DMF and PC have been obtained(Table 3). According...

Sprengel pycnometers were used for density measurements. The volume of the pycnometers is about 25 ml. The precision of density data is within±0.015kgm~(-3). All measurements have been performed at 25.000±0.001℃.Partial molal volumes of salts in H_2O、 DMF and PC at 25℃ have been reported(Table 1). A method to get ionic partial molal volumes from salt data based on thermodynamic and statistical approximation has been given. Ionic partial molal volumes in H_2O、 DMF and PC have been obtained(Table 3). According to one layer structure model,a formula of solvation number related to partial molal volume is reported: m_i=m_α+m_β where m_i is the first solvation number; m_α, inherent solvation number; and m_β, transfer solvation number. The calculated results have been glven(Table 4). For ions with noble gas structure, m_i has linear relation to r_i, ionic radius, and the change of m_β/z with l/r_i is very slow, where z is valence of ion. m_i and m_β of transition metal ions and Pb~(2+) are larger than those from linear relations of noble gas ions(Fig.1 and Fig.2). This shows that interaction between solvent and these ions is somewhat stronger. In the case of bivalent transition metal ions in water, m_i is almost constant and the variation of m_β is similar to that of thermodynamic properties of hydration, related to the d orbitals.

本文用比重法测定了25℃一些盐在N,N-二甲基甲酰胺和碳酸丙烯酯中的偏摩尔体积。在统计热力学理论推导的基础上,提出了一种将盐的偏摩尔体积划分为离子的偏摩尔体积的方法。运用单层结构模型,得到了从离子偏摩尔体积求离子溶剂化数的公式。讨论了各种类型离子的溶剂化数的某些现象和规律。

 
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