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arsenic ion
相关语句
  砷离子
     Damage Profile of 12keV Low-Energy Arsenic Ion Implanted Silicon
     12keV低能砷离子注入硅的损伤分布
短句来源
     Stationary irradiation of high power CW CO2 laser is used for annealing of arsenic ion implanted silicon.
     利用高功率连续CO_2激光定点辐照,对砷离子注入的硅片进行退火。
短句来源
     Annealing Processes for Boron-Implanted Regions in Pt-Si Schottky Circuits with Arsenic Ion Implanted Polysilicon Emitters
     砷离子注入多晶硅发射区Pt-Si肖特基电路的注硼退火工艺
短句来源
     ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON
     用椭圆偏光法研究硅中砷离子注入的损伤和退火效应
短句来源
     Influence of Intrinsic Diffusion Caused by Neutral Vacancy on Arsenic Ion Redistribution during Annealing
     中性空位引起的本征扩散对硅中注入砷离子在退火过程中再分布的影响
短句来源
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  “arsenic ion”译为未确定词的双语例句
     A ATUDY ON SUPERCONDUCTING FILMS OF Nb(As) PRODUCED BY ARSENIC ION IMPLANTATION
     用As离子注入法生成Nb(As)超导膜实验研究
短句来源
     on the other hand,the balance potential of copper cathode decreased than the system without arsenic ion when the electrolyte contains copper ion 8g/l and 15 g/l.
     当Cu2+为8g/l、15g/l时,溶液中加入As3+后,系统中铜的平衡电极电势比纯铜系统降低。
短句来源
     Effect of Arsenic Ion on the Balance Potential of Copper Cathode
     As~(3+)浓度对阴极铜稳态极化曲线平衡电位的影响
短句来源
     Specially, the prepared sieve can effectively capture the deleterious arsenic ion with high separation capability and deep adsorption.
     本文对层柱化合物脱砷材料的制备、性能表征、外能注入促进和强化吸附过程及吸附分离微量砷过程中的材料表面物理化学行为进行了较为深入的探索。
短句来源
     I 2902 IC fabricated by polysilicon shallow juction technique with arsenic ion implantation are determined, including the diffusion coefficient, sheet resistivity, mobility and grain size of polysilicon.
     I2902电路中的基本参数:As在多晶Si中的扩散系数、电阻率、迁移率和晶粒大小。
短句来源
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  相似匹配句对
     APPLICATION OF ION CHROMATOGRAPHY IN THE ANALYSIS OF ARSENIC SPECIES
     离子色谱在砷化物形态分析中的应用
短句来源
     Determination of Arsenic in Residue of Penicillin by Ion Chromatography
     离子色谱法测定青霉素残渣中砷的研究
短句来源
     ION BEEN OXIDATION
     离子束氧化
短句来源
     Complexation Ion Chromatography
     螯合物离子色谱
短句来源
     Studies on Arsenic Carcinogenesis
     砷的致癌作用及其机制的研究
短句来源
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  arsenic ion
The p on n planar architecture is achieved by selective arsenic ion implantation.
      
Arsenic incorporation into MBE-HgCdTe was carried out in two different ways: (1)ex-situ arsenic ion-implantation on indium-doped n-type HgCdTe layers, and (2) through a new approach called arsenic planar doping.
      
Arsenic ion implantation induced structural effects in C60 films
      
The study revealed that there was a slight reduction in the rate of adsorption of arsenic ion onto the larger particle size, but adsorption capacity and parameters were unaffected.
      
Arsenic-bearing copper ores and concentrates could be leached by Sulfolobus BC in the presence of ferric iron due to the favourable precipitation of arsenic ion as ferric arsenate, avoiding significant bacterial inhibition.
      
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Stationary irradiation of high power CW CO2 laser is used for annealing of arsenic ion implanted silicon. The experimental results indicate complete recovery of crystal damage, high substitution and electrical activation of implanted arsenic atoms. The surface deformation of silicon wafer during scanning by focused laser beam has been eliminated.

利用高功率连续CO_2激光定点辐照,对砷离子注入的硅片进行退火。实验结果表明晶格损伤得到了完全恢复,注入砷原子的替位率与电激活率高,还克服了激光聚焦扫描退火时引起硅片表面变形的问题。

The method of detemination of arsenic in river Sediment by atomic absorption spectrophotometry with hydride generation-heating quarty tube is described in this paper. For determining arsenic element that may form volatile hydrides, the samples are first pre-treated to form the solutions which arsenic ion is borne in, then a reductant KBH_4 is dispensed into the sample solution in which arsenic ion reacts with the reductant to liberate hydrogen and volatile hydride. The hydrogen stream flushes the...

The method of detemination of arsenic in river Sediment by atomic absorption spectrophotometry with hydride generation-heating quarty tube is described in this paper. For determining arsenic element that may form volatile hydrides, the samples are first pre-treated to form the solutions which arsenic ion is borne in, then a reductant KBH_4 is dispensed into the sample solution in which arsenic ion reacts with the reductant to liberate hydrogen and volatile hydride. The hydrogen stream flushes the hydride into the heated quarty tube where it is decomposed and the absorption of the arsenic is measured. The tube is heated to between 900℃ and 1000℃. The sensitivity of the method is high. The detection limit and recovery percent age are 0.0057mg/kg and 95~106%,respectively.

本文详细介绍了氢化物发生—加热石英管原子吸收光谱法测定底质(水底沉积物)中砷的方法.首先将试样进行预处理,形成砷离子溶液,然后将还原剂硼氢化钾加入到含有砷离子的酸性溶液中,反应生成游离氢和易挥发的砷化氢.氢气流将砷化氢吹入加热石英管,进行分解并测定砷的吸收.石英管加热到900~1000℃.该方法灵敏度高,检测限和回收率分别为0.0057mg/kg和95~106%.

The basic electrical parameters of D.I 2902 IC fabricated by polysilicon shallow juction technique with arsenic ion implantation are determined, including the diffusion coefficient, sheet resistivity, mobility and grain size of polysilicon. How the oxide layer at the interface between poly-and mono-crystalline silicon, thickness and grain size of polysilicon affect the electrical parameters of the IC is discussed in detail. The presence of an extremely thin oxide layer at the interface prevent the diffusion...

The basic electrical parameters of D.I 2902 IC fabricated by polysilicon shallow juction technique with arsenic ion implantation are determined, including the diffusion coefficient, sheet resistivity, mobility and grain size of polysilicon. How the oxide layer at the interface between poly-and mono-crystalline silicon, thickness and grain size of polysilicon affect the electrical parameters of the IC is discussed in detail. The presence of an extremely thin oxide layer at the interface prevent the diffusion of arsenic ions from poly-to mono-crystalline silicon, and is favourable for the current gain of the IC. The basic electrical parameters of D.I 2902 and its technological process of fabrication are presented briefly.

本文用背散射技术、霍尔效应和X光衍射法测量As离子注入多晶Si浅结工艺在制备D.I2902电路中的基本参数:As在多晶Si中的扩散系数、电阻率、迁移率和晶粒大小。对影响电路参数的多晶Si与单晶Si之间的界面氧化层、多晶Si厚度和晶粒大小作了较详细的分析,指出极薄界面氧化层的存在影响As从多晶Si向单晶Si的扩散,也有利于发射效率的提高。最后给出D.I2902电路的工艺流程和基本电参数。

 
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