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phonon
相关语句
  声子
     At least seven phonon structures have been observed at about 136, 154 (or 151), 193, 230, 280, 293, and 337 cm~(-1).
     观察到至少7个声子结构,分别位于136cm~(-1)、154cm~(-1)(或151cm~(-1))、193cm~(-1)、230cm~(-1)、280cm~(-1)、293cm~(-1)和337cm~(-1)(或345cm~(-1)).
短句来源
     BeAl_2O_4:Cr~(3+)Phonon Terminated Lasers
     BeAl_2O_4:Cr~(3+)终端声子激光器
短句来源
     A COMPARISON OF INFRARED PHONON SPECTRA BETWEEN YBa 2Cu 3O 6.3 and PrBa 2Cu 3O 6.3
     PrBa_2Cu_3O_(6.3)和YBa_2Cu_3O_(6.3)材料的红外声子谱的比较
短句来源
     Phonon Sideband Spectra Analysis for Eu~(3+)-doped XF_n-H_3BO_3
     Eu~(3+)掺杂的XF_n-H_3BO_3玻璃材料的声子边带分析
短句来源
     STRUCTURE AND PHONON VIBRATION OF NdBa_2Cu_(3-x)Mn_xO_y SYSTEM
     NdBa_2Cu_(3-x)Mn_xO_y体系的结构和声子振动
短句来源
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  振动量子
     The carrier of the energy is a soliton formed by self-trapping of an amide-I vibrational quantum interacting with the vibration of an amino acid residue (phonon).
     它的载流子是酰胺键振动量子在与氨基酸残基振动相互作用时在非线性作用下自陷而成的孤子 .
短句来源
  “phonon”译为未确定词的双语例句
     Effective Pair Potential and Phonon Spectra in Liquid Se_(1-x)Te_x Alloys with the Nonmetal-Metal Transition
     Effective Pair Potential and Phonon Spectra in Liquid Se_(1-x)Te_x Alloys With the Nonmetal-Metal Transition
短句来源
     Longitudinal Optical Phonon Modes in GaAs/Al_xGa_(1-x)As Superlattices
     GaAs/Al_xGa_(1-x)As超晶格中的纵光学声子模
短句来源
     CALCULATION OF ZONE CENTER PHONON MODES OF Tl_2Ba_2CuO_6
     Tl_2Ba_2CuO_6布里渊区中心声子模的计算
短句来源
     The modes, which are 72 cm~(-1) distant from the nLO phonon of ZnS, are from the nLO+ E_2~L of ZnS.
     而在与ZnS的nLO相距为72cm~(-1)出现的信号是来自于ZnS的nLO+E_2~L。
短句来源
     The phonon and energy splitting in the D_(3d)minima for the T_( 1u)h_ g Jahn-Teller system*
     T_(1u)h_gJahn-Teller系统:D_(3d)势阱中的频率分解与能级分裂
短句来源
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  phonon
Stress relaxation is observed in Mg-doped GaN, and it is suggested that Mg-induced misfit dislocation and electron-phonon interaction are the possible origins.
      
This size effect could greatly modify the electronic structure near the Fermi level and lead to quantum oscillations in superconductivity, electron-phonon coupling and thermal expansion.
      
What is the highest Tc for phonon-mediated superconductivity
      
We suggest that the high-temperature superconductivity can be attributed to the director-roles of the van Hove singularity between an electron-electron interaction and an electron-phonon interaction.
      
If Al and Si atoms are assumed to arrange along the c axis in an F-like long-range ordering (-Al-Al-Al-and-Si-Si-Si-), one could obtain the ultrasoft B1g phonon mode and thus very strong electron-phonon coupling in CaAlSi.
      
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With the use ot Fulton s variational function,the effect of the excitonlattice interaction on the energy level and The effective mass of an exciton is calculated.At finite temperatures, in addition to the virtual Phonon cloud surrounding the exciton,there exist real phonons(lattice thermal vibrations)The exciton-Phonon interaction leads to a lowered energy level and an increared effective mass of the exciton,with both depending on the temperature. At absolute zero,the result reduces to that obtained...

With the use ot Fulton s variational function,the effect of the excitonlattice interaction on the energy level and The effective mass of an exciton is calculated.At finite temperatures, in addition to the virtual Phonon cloud surrounding the exciton,there exist real phonons(lattice thermal vibrations)The exciton-Phonon interaction leads to a lowered energy level and an increared effective mass of the exciton,with both depending on the temperature. At absolute zero,the result reduces to that obtained by Guraris variational function.

利用佛尔頓的变分函数,計算了激子——晶格互作用对激子的能级和有效貭量的影响,在有限温度下,除了圍繞激子的虛声子外,还存在实声子(晶格的热振动)激子与声子的作用使激子的能级降低,有效貭量增加,且二者都与温度有关。在絕对零度下,結果与利用古拉列的变分函数得到的結果一致。

A theory is proposed for the impurity-induced tunnelling current which apparently constitutes the major part of the current observed in As and P doped germanium tunnel diodes. The experimental valley-orbit splittings of various donors in. germanium show-that the short range atomic fields of As and P are many times stronger than that of Sb and, for doping levels above 1019/cm3, can be equally or more effective in scattering than phonons. The possible mechanisms for tunnelling caused by impurity scattering are...

A theory is proposed for the impurity-induced tunnelling current which apparently constitutes the major part of the current observed in As and P doped germanium tunnel diodes. The experimental valley-orbit splittings of various donors in. germanium show-that the short range atomic fields of As and P are many times stronger than that of Sb and, for doping levels above 1019/cm3, can be equally or more effective in scattering than phonons. The possible mechanisms for tunnelling caused by impurity scattering are examined; it is found that owing to a special feature of the germanium band structure, namely, (0, 0, 0) conduction band minimum not too high and associated with a particularly small effective mass, a second order process via the (0, 0, 0) minimum should be the dominant process. A method for treating such a second order process is developed, which gives a clear quasi-classical picture of the tunnelling process: an electron tunnelling from a conduction band minimum, when reaching an optimum depth, is scattered inta (0, 0, 0) states and proceeds thereon to the valence band maximum much as in direct tunnelling. An explicit expression for the current is obtained; the magnitude of the current is estimated and a comparison with a similar phonon-assisted current (see accompanying paper II) is made. It is also shown that despite the anisotropic nature of the conduction band minima, the second order current should be nearly direction-independent.

这工作是对锗中杂质散射引起的隧道电流的理论分析。说明在高掺杂(~10~(19)厘米~(-3)时杂质散射隧道电流是重要的,可以与联系着声子的隧道电流比拟或更大。不同杂质的作用是不同的,AS和P比Sb的强。锗中杂质隧道过程主要是二级过程,由导带底穿入禁带的电子先被杂质场散射到对应于导带(0,0,0)谷的电子状态,然后,再在结势垒场的作用下跃迁到价带。提出了这种过程的理论,得到杂质隧道电流的表达式,说明只有处在势垒区中一定区域(大致是20左右厚度)中的杂质原子对这个过程有显著贡献。虽然导带底是各向异性的,但这过程的几率却几乎是各向同性的。在附录Ⅱ中还提供了一个在任意形式位垒下直接隧道过程的普遍理论。

The present paper is a sequel to the accompanying paper I, where a theory is given for the impurity-induced current in germanium tunnel diodes. It is pointed out that for reasons similar to those given in connexion with the impurity-induced current, the phonon-assisted current in germanium diodes should be attributed to a second order process via (0, 0, 0) conduction band minimum rather than the first order process hitherto assumed. By methods similar to those developed in I, the second order current expression...

The present paper is a sequel to the accompanying paper I, where a theory is given for the impurity-induced current in germanium tunnel diodes. It is pointed out that for reasons similar to those given in connexion with the impurity-induced current, the phonon-assisted current in germanium diodes should be attributed to a second order process via (0, 0, 0) conduction band minimum rather than the first order process hitherto assumed. By methods similar to those developed in I, the second order current expression is deduced and discussed; in particular, symmetry arguments indicate that for the second order process in germanium diodes, the longitudinal acoustic phonons should be by far the most effective, in agreement with existing experimental evidences.

本文是对锗中声子散时引起的隧道电流的理论分析。指出这过程主要是二级过程,由导带底进入禁带的电子,被声子散射到联系着导带(0,0,0)谷的状态,再在结势垒场的作用下跃迁到价带。对这过程起主要作用的是在结势垒区中一定区域(大致是20厚)的晶体原子振动。这过程的几率几乎是各向同性的。从对称性的一般考虑,说明锗中纵声学支格波对隧道过程的贡献是最强的。

 
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