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蓝色发射
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  blue emission
     The results of PL measurement showedthat MGa2S4:Ce phosphor achieved an even more saturated blue emission, and the optimumcerium concentration for high efficiency and more saturated blue emission was about 6mol% forMGa2S4:Ce, 3.0~4.0mol% for SrGa2S4:Ce.
     发射光谱、色纯度及发光强度的影响,同时研究了基质组份的改变对发光特性的影响.结果表明,CaGa2S4:Ce和SrGa2S4:Ce可发射纯蓝色光,色纯度好.对CaGa2S4:Ce来说,实现其高效率的、纯蓝色发射的最佳Ce3+浓度为6mol%,而SrGa2S4:Ce的最佳Ce3+浓度为3~4mol%.
短句来源
  blue emitting
     9,10-bis(3'5'-diaryl)phenyl anthracene doped with perylene (JBEM(P))is a new blue emitting material;
     9,1 0 bis( 3’5’ diaryl) phenylanthracene(JBEM)是蓝色发射层[12 ] ;
短句来源
  “蓝色发射”译为未确定词的双语例句
     White organic light emitting diodes with new blue material and two kinds of structures have been constructed:one with blue and red emission in a same layer,the other with blue and red emission in separated layers. The configurations of the devices are ITO/CuPc/NPB/JBEM(P)∶DCJT/Alq/MgAg(Device l) and ITO/CuPc/NPB/JBEM(P)/Alq∶DCJT/Alq/MgAg(Device 2).
     使用新材料构成了两种结构白色有机薄膜电致发光器件 ,一种是蓝色及红色发射在同一层中 ,另一种是蓝色发射和红色发射分别在两层中 ,器件结构分别为ITO/CuPc/NPB/JBEM(P)∶DCJT/Alq/MgAg(器件 1 )和ITO/CuPc/NPB/JBEM(P) /Alq∶DCJT/Alq/MgAg(器件 2 )。
短句来源
     THE RECOMBINATION PROCESS OF THE BLUE EMISSION AT ROOM TEMPERATURE FROM VPE ZnSe EPILAYER
     气相外延ZnSe单晶膜室温蓝色发射的复合过程
短句来源
     The bright blue light is observed in the bright room.
     在明亮的房间里可以观察到鲜明的蓝色发射
短句来源
     The photoluminescence of epitaxial film is excited by a nitrogen laser (A = 3371 A) with the peak pulsed power of 900kW and measured at 77K and at the room temperature. The PL spectrum at 77K consists of a narrow near- band-edge emission at about 4460 A and a broad emission at longer wavelengths which is attributed to Cu-G emission.
     在77K的温度下测量了外延膜的光致发光,4460A附近可以观察到很强的蓝色发射
短句来源
     Blue emiting BAM phosphor was coated with nano scale γ Al 2O 3,forming a alumina protective film around individual particle of BAM. The surface state of the coated powder was investigated with SEM and XPS. Fluorescent lamps were prepared using the coated phosphor for the lighting test.
     用表面包膜技术对灯用蓝色发射BAM荧光粉进行处理 ,获得了表面包覆纳米氧化铝 (γ Al2 O3 )的BAM粉 ,并通过SEM、XPS等手段进行了测试研究 .
短句来源
  相似匹配句对
     BLUE
     蓝色
短句来源
     Blue Spring
     蓝色青春
短句来源
     The bright blue light is observed in the bright room.
     在明亮的房间里可以观察到鲜明的蓝色发射
短句来源
     Failure to Launch
     发射失败
短句来源
     Launch window
     发射窗口
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  blue emission
It is found that the spectral contour of dual luminescence also depends on the excitation wavelength and the blue emission band is cut off at a sufficiently long-wavelength excitation in the region of 390 nm.
      
Assumptions are made about the types of intrinsic and impurity defects involved in the formation of various centers in GaN as sources of blue emission.
      
A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photoluminescence spectra, and the origin of blue emission was investigated.
      
Poly(9,9-dioctylfluorene) (PFO) shows highly efficient blue emission with photo excitation occurring between 340-400 nm.
      
We have designed a new structure blue emission device with doped Alq3 of 3% in hole transmission layers of NPB.
      
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  blue emitting
As light source, the developed technique uses a blue emitting GaN laser diode.
      
Theoretical design of blue emitting materials based on symmetric and asymmetric spirosilabifluorene derivatives
      
Cerium activated Y2SiO4, a fast, blue emitting phosphor, was incorporated into a composite organic/inorganic polymeric material.
      
It is shown that laser-processed silicon and UV/blue emitting sp-Si display identical PL spectra.
      
By repeating this for red, green and blue emitting materials a RGB-OLED-display can be realized.
      
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The blue electroluminescence of C-ZnSe:Ga at room temperature is first reported,presented the measurement on the relative properties,and discussed the its luminous mechanism. A strong peak of the electroluminous spectra is at 4800A and a weak peak at 6300A. The self-activated emission at 6300A is reduced with increase of voltage,but the edge emission at 4800A increased. Therefore, the colours vary from red via yellow and green to blue.The bright blue light is observed in the bright room. Finally,the tentative...

The blue electroluminescence of C-ZnSe:Ga at room temperature is first reported,presented the measurement on the relative properties,and discussed the its luminous mechanism. A strong peak of the electroluminous spectra is at 4800A and a weak peak at 6300A. The self-activated emission at 6300A is reduced with increase of voltage,but the edge emission at 4800A increased. Therefore, the colours vary from red via yellow and green to blue.The bright blue light is observed in the bright room. Finally,the tentative idea of ZnSe varicoloured display is presented.

本文首次报导了C-ZnSe:Ga的室温蓝色注入式发光,测量了有关特性并讨论了发光机理。电致发光光谱具有强的4800A的蓝峰和弱的6300A的红峰。随着正向电压的增加,6300A的自激活发射相对减弱,而4800A的蓝色边缘发射逐渐增强。因此,当电压增加时,发光颜色由红色经黄色和绿色,逐渐变成纯蓝色。在明亮的房间里可以观察到鲜明的蓝色发射。文末提出了ZrSe多色显示的设想。

An epitaxial growth of ZnSe single crystalline layer on a GaAs substrate has been performed in a hydrogen flow system using ZnSe powder as source material.Before deposition, machemically polished (100) GaAs substrate is first cleaned in trichroethylene, then in aceton and finally in methanol followed by a rinse in deionized water.The substrate is then etched in a mixture of H2SO4:H2O2:H2O = 3:1:1 for about 1 min. In order to remove surface damage resulting from cutting and polishing of the wafer.The source material...

An epitaxial growth of ZnSe single crystalline layer on a GaAs substrate has been performed in a hydrogen flow system using ZnSe powder as source material.Before deposition, machemically polished (100) GaAs substrate is first cleaned in trichroethylene, then in aceton and finally in methanol followed by a rinse in deionized water.The substrate is then etched in a mixture of H2SO4:H2O2:H2O = 3:1:1 for about 1 min. In order to remove surface damage resulting from cutting and polishing of the wafer.The source material and freshly etched substrate are inserted into the respective zones of the reaction tube. The flow rate of the carrier gas H2 is set to 10-40 ml/min, which is controlled by a mass flow controller (M.F.). The source temperature is about 820-850℃.The single-crystalline ZnSe layer is obtained successfully at the substrate temperature range of 550-750℃.The X-ray diffraction analysis, X-ray Laue pattern and reflective electron diffraction analysis of the as-grown layer demonstrat that the layers are single crystalline and have cubic structure. The as-grown surface microphoto-graph and cleavage edge view are presented.The growth rate is found to be proportional to exp(-EA/kT) in the temperature range of 550-700℃, where k is Boltzmann constant, Ea the activation energy and T the growth temperature.The activation energy is 10.5 kcal/mol, which suggests the growth kinetics should be between the mass transfer control case and surface reaction control case.The photoluminescence of epitaxial film is excited by a nitrogen laser (A = 3371 A) with the peak pulsed power of 900kW and measured at 77K and at the room temperature. The PL spectrum at 77K consists of a narrow near- band-edge emission at about 4460 A and a broad emission at longer wavelengths which is attributed to Cu-G emission. The presence of this intrinsic near-band-gap emission line in the PL spectrum even at room temperature sbows the bigh quality of the epitaxial layer.The measurement cf the resistivity and Hall effect are made for epilayers of ZnSe frown on a se-mi-insulating GaAs substrate at room temperature. Ohmic contacts to the ZnSe layers are made by In followed by an annealing step in N2 atmosphere at 350℃ for 3 mins. The resistivity of the as-grown ZnSe is typically 1.1Ωcm. This is attributed to autodoping of Ga impurity from GaAs substrate. The mobility is 114 cm2V-1s-1, and the electron concentration n = 5×1016cm-3. It is shown that ZnSe epilayer grown on (100) GaAs by VPE can be a suitable material for blue-emitting electroluminescent devices.

采用改进的气相外延法在(100)GaAs衬底上外延生长了ZnSe单晶膜。最大生长速率为每小时10μm左右。淀积过程的激活能为10kcal/mol。在77K的温度下测量了外延膜的光致发光,4460A附近可以观察到很强的蓝色发射。外延膜的电阻率~1.1Ω·cm。

The blue-emitting phosphor SrGa2S4 : Ce was prepared, whose crystallinity was analysed by X-ray diffraction. The excitation and emission spectra of SrGa2S4: Ce were measured and investigated, and the effects of the cerium concentration on the PL properties of SrGa2S4: Ce powder wrer studied. The results of PL measurement showed that SrGa2S4 :Ce phosphor achieved an even more saturated blue emission, and the optimum cerium concentration for high efficiency and more saturated blue emission was ranged from 3.0...

The blue-emitting phosphor SrGa2S4 : Ce was prepared, whose crystallinity was analysed by X-ray diffraction. The excitation and emission spectra of SrGa2S4: Ce were measured and investigated, and the effects of the cerium concentration on the PL properties of SrGa2S4: Ce powder wrer studied. The results of PL measurement showed that SrGa2S4 :Ce phosphor achieved an even more saturated blue emission, and the optimum cerium concentration for high efficiency and more saturated blue emission was ranged from 3.0 to 4.0 mol%.

制备了可用于蓝色TFEL的粉末发光材料SrGa_2S_4:Ce,并对其晶体结构进行了X射线衍射分析,测量并研究了其激发光谱和发射光谱,同时研究了Ce~(3+)浓度的变化对SrGa_2S_4:Ce的激发光谱、发射光谱、色纯度及发光强度的影响,结果表明SrGa_2S_4:Ce可发射纯蓝色光,色纯度极佳,实现其高效率的、纯蓝色发射的最佳Ce~(3+)浓度为3~4mol%。

 
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