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damage constant
相关语句
  损伤常数
     The damage constant was calculated, and damage threshold dose φ0.5 was tested or reckoned.
     估算了损伤常数,测试或推算出损伤阈φ0.5;
短句来源
     A Pre-estimation of Neutron Damage Constant for Double-Diffused Transistors
     双扩散晶体管中子损伤常数预估初探
短句来源
     Based on the experimental data, an empiric formula has been found to ralate a normalized device's damage constant with neutron energy.
     在实验基础上,拟合出一个归一化的器件损伤常数与辐照中子能量关系的经验公式。
短句来源
  “damage constant”译为未确定词的双语例句
     The calculated carrier removalrate in devices ranges from 8 cm~(-1) to 30cm~(-1), and the mobility damage constant is smaller, inthe order of about 10~(-17) cm~2 at room temperature.
     对器件载流子去除率进行了计算,其值在8-30cm~(-1)范围内. 迁移率退化因子是比较小的,在室温大约为10~(-17)cm~2量级.
短句来源
  相似匹配句对
     B is constant.
     B为常数。
短句来源
     Windthrow is constant to the forest, involving stem damage and uproot.
     风倒是森林中常见的现象,主要包括干折和根倒两种情况。
短句来源
     A is constant.
     A为常数。
短句来源
     On Construction Damage
     施工索赔研究
短句来源
     2. damage.
     2、损害事实。
短句来源
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  damage constant
Damage constant and deep-level transient spectroscopy in neutron irradiated GaAsP alloys
      
They concluded that the divacancy is the dominant defect that generates bulk dark current and defined a universal damage constant.
      


In this paper a theoretical foundation for studing the relative damage produced by different energy neutron radiation is described. The radiation damage in semiconductor devices resulting from three different energy neutron souces is presented. The ralative damage ratios are given for three energy spectra. Based on the experimental data, an empiric formula has been found to ralate a normalized device's damage constant with neutron energy.

本文论述了利用双极晶体管的电参数研究不同能量中子辐照时的相对损伤的理论基础,叙述了半导体器件受三种不同能量中子辐照的损伤结果,指出三种能谱的相对损伤比。在实验基础上,拟合出一个归一化的器件损伤常数与辐照中子能量关系的经验公式。

The radiation effects of 12MeV electron irradiated GaAs MESFET are investigated.Elec-tron traps with level of E_1'(E_0-0.38eV), E_2'(E_0-0.57eV) aind E_3' (E_c-0.74eV) have beenfound in VPE n-GaAs active layer after irradiation.The results indicate that the changes of GaAsMESFET parameters are mainly due to the carrier removal.The calculated carrier removalrate in devices ranges from 8 cm~(-1) to 30cm~(-1), and the mobility damage constant is smaller, inthe order of about 10~(-17) cm~2 at room temperature....

The radiation effects of 12MeV electron irradiated GaAs MESFET are investigated.Elec-tron traps with level of E_1'(E_0-0.38eV), E_2'(E_0-0.57eV) aind E_3' (E_c-0.74eV) have beenfound in VPE n-GaAs active layer after irradiation.The results indicate that the changes of GaAsMESFET parameters are mainly due to the carrier removal.The calculated carrier removalrate in devices ranges from 8 cm~(-1) to 30cm~(-1), and the mobility damage constant is smaller, inthe order of about 10~(-17) cm~2 at room temperature.

本文研究了GaAs MESFET的12MeV电子辐照效应.在n型VPE GaAs有源层中电子辐照感生了E_1~'(E_c-0.38eV)、E_2~'(E_c-0.57eV)、E_s~'(E_c-0.74eV)缺陷.研究表明,GaAsMFSFET参数的变化主要是由于载流子去除效应.对器件载流子去除率进行了计算,其值在8-30cm~(-1)范围内.迁移率退化因子是比较小的,在室温大约为10~(-17)cm~2量级.

Experiments of neutron irradiation were carried out for 15 kinds of transistors by means of in-situ test. Relations of current gain with neutron doses were shown.The damage constant was calculated, and damage threshold dose φ0.5 was tested or reckoned. Also, the annealing effects of in-situ testing, the effect of test current and the accompaning Gamma-ray en the testing results were investigated. Finally, a comparison was made for neutron radiation hardness of different transistors.

利用中子辐照拉长线静态测试方法对15种硅双极晶体管进行了中子辐照损伤的实验研究;给出了这些晶体管电流增益与中子注量的关系;估算了损伤常数,测试或推算出损伤阈φ0.5;讨论了拉长线静态测试的退火效应、测试电流大小及伴生γ射线对测试结果的影响;对不同种类的晶体管抗中子辐照性能进行了简单的比较。

 
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