助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   ag film 的翻译结果: 查询用时:0.194秒
图标索引 在分类学科中查询
所有学科
物理学
工业通用技术及设备
化学
材料科学
更多类别查询

图标索引 历史查询
 

ag film
相关语句
  ag膜
     EFFECTS OF Al_2O_3 AND Cr INTERLAYERS ON THE OPTICAL PROPERTY AND ADHESION OF Ag FILM
     Al_2O_3和Cr过渡层对Ag膜光学性质及其附着力的影响
短句来源
     The bistability F P cavity consists of the Ag AgTCNQ Ag film system.
     双稳F-P腔是由Ag-AgTCNQ-Ag膜系组成。
短句来源
     Properties of Ag film deposited on BK7 glass substrate with Al_2O_3 and Cr intermediate layers were investigated by using spectrophotometer,XRD,AES and adhesion test. The results showed that the effect of Al_2O_3 interlayer on the reflectivity of Ag film is smaller compared with Cr interlayer.
     研究了在玻璃基底上镀制Al_2O_3和Cr过渡层对Ag膜反射率及附着力的影响.分光光度计测试了Ag膜的反射率,结果表明,与Cr过渡层相比,Al_2O_3过渡层对Ag膜反射率的降低相对较小;
短句来源
     And with increasing Al_2O_3 interlayer thickness,the reflectivity of Ag fihn increased firstly and then decreased. On the other hand,introducing Al_2O_3 and Cr interlayers,the Ag grains are refined and the(111)texture of Ag film are weakened due to the diffusion of aluminum and Cr atoms to the growth face,thus resulting in the decrease of reflectivity of Ag film.
     而且,随着Al_2O_3厚度的增加,Ag膜的反射率先增大后减小.XRD与AES测试表明,引入Al_2O_3或Cr可明显细化Ag晶粒,减弱Ag膜(111)织构;
短句来源
     In the present work, the behaviors of a-Ge/Ag composite layers are studied. These layers are composed of amorphous Ge film with thickness 2000 A and Ag film with different thickness.
     本文研究了不同厚度Ag膜与2000A非晶Ge膜形成的迭层行为。
短句来源
更多       
  ag薄膜
     Molecular Dynamics Simulation of the Process of Growth of Ag Film on Cu Surface
     Cu表面生长Ag薄膜过程的分子动力学模拟
短句来源
     The ellipsometric results show that the difference of n, k between the Ag films prepared by authers and the Johnson′s thick Ag film is considerable.
     2 5 0nm~ 830nm光频范围椭偏光谱测量结果表明 :与Johnson的厚Ag膜数据相比 ,我们制备的Ag薄膜光学折射率n总体上均增大 ,消光系数k变化复杂 ;
短句来源
     The nonlinear optical properties of the AgO x-type super-resolution near-field structure (SuperRENS) films were studied using confocal Z-scan technique with 0.7 ns, 532 nm laser pulses. Nonlinear refractive indexes at different laser power were obtained through close-aperture Z-scan and compared with the measured results of Au film and Ag film, The mechanisms of this change due to the photochemical reaction, thermal effects and optical response were discussed.
     采用共焦Z扫描系统,以λ=532 nm,脉冲宽度0 7 ns,重复频率15 79 kHz的脉冲半导体激光器作为入射光源,研究了AgOx 超分辨近场结构(SuperRENS)薄膜样品的非线性光学性质,实验获得了其三阶非线性折射率系数随入射光功率的变化曲线,并与Au,Ag薄膜作了比较,讨论了光致非线性变化过程。
短句来源
     At the same time,with increasing sputtering power,the resistivity of film increased. Current-voltage test shows that the ohmic contact property between sputtered Cu/Ag film and Cd_(1-x)Zn_xTe was good even without heat treatment. The ohmic contact property under sputtering power of 100 W was better than that of 40 W.
     电流-电压关系(I-U)测试表明在高阻Cd1-xZnxT e上溅射Cu/A g薄膜后不经热处理已具有良好的欧姆接触性,溅射功率为100W时的接触性能好于功率40W时的接触性能。
短句来源
     Ag film with a few ten nanometers thickness was deposited by magnetron sputtering,which differentiated the surface and volume of the substrate.
     首先采用磁控溅射技术在基片表面沉积厚度为几十nm的金属Ag薄膜,然后将基片的表面和体区分开考虑,通过TIS测得了基片上下表面的均方根粗糙度,进而求得基片的总散射和表面散射,最后计算得到了体散射。
短句来源
  “ag film”译为未确定词的双语例句
     The Tribological Properties and Adhesion of N~+ Ion Implanted Ag Film on Al_2O_3
     N~+离子束增强Ag/Al_2O_3膜附着力及其摩擦学研究
短句来源
     As the samples are annealed, we obtain various R(T_a)-T relations under different annealling temperature Ta and various dependences of R_(300k) on T_a for layers withe different thickness of Ag film.
     当对这些迭层退火时,实验得到十分不同的电阻R_(300K)与退火温度T_a的关系以及不同T_a下各种R(T_a)-T的关系。
短句来源
     The Study of the Drude Parameters of Ag Film by ATR Method
     ATR方法研究银膜的Drude参量
短句来源
     The lowest surface contact resistivity,1.3× 10-7ohm·cm2,is obtained by using the method of centering Ag film.
     最低达到1.3×10~(-7)Ω·cm~2(77K).
短句来源
     The tranmittanceat wavelength of 555nn is 93. 5% , reflectivity at wavelength of 2500nm is around 65% , and infrared emissivity in 8 - 14μm wavelength range is lower than 0. 2. It was found that the increasing thickness of Ag film narrows the high transmittance band.
     结果表明:样品在可见光透过率最高可达94.5%,555 nm波长处最高达93.5%,2500 nm波长处反射率>65%。 8-14μm波段红外发射率ε<0.2。
更多       
查询“ag film”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  ag film
One defect observed in such films is the presence of porosity either at the Ag/porcelain interface or inside the Ag film structure.
      
It has been found that the Au film grows epitaxially in the layer-by-layer mode along the >amp;lt;001>amp;gt; direction, while the Ag film grows in the >amp;lt;110>amp;gt; direction in the Stranski-Krastanov mode.
      
For both Ag/Si(100) and Ag/Si(111) epitaxial systems, a high-density defect region was contained in the Ag film within ~1000 ? of the interface.
      
An attenuated total reflection (ATR) geometry is used in which a quartz electrooptic crystal onto which a thin Ag film has been evaporated is contacted to the hypotenuse face of a high-index prism.
      
The grain size in the Cu(Ag) film can thus be predicted from the Ag precipitate size by using this relationship.
      
更多          


UPS and XPS spectra of silver film (from 0.05(?) to 1000(?)) on GaAs (110) cleavedsurface have been measured at hv=21.2eV,40.8eV,and 1486.6eV.The variationsof Ga3d,As3d,Ag3d,d-band,and valence band of Ag on GaAs with increasingthe thickness of silver film have been analyzed.Information about the Fermilevel pinning,the intermixing at the interface of metal-semiconductor,the Fermiedge and the band structure of thin Ag film,and a maximum of the relationbetween the intensity of d-band...

UPS and XPS spectra of silver film (from 0.05(?) to 1000(?)) on GaAs (110) cleavedsurface have been measured at hv=21.2eV,40.8eV,and 1486.6eV.The variationsof Ga3d,As3d,Ag3d,d-band,and valence band of Ag on GaAs with increasingthe thickness of silver film have been analyzed.Information about the Fermilevel pinning,the intermixing at the interface of metal-semiconductor,the Fermiedge and the band structure of thin Ag film,and a maximum of the relationbetween the intensity of d-band UPS and the thickness of Ag film has beenobtained,showing some similarities and some differences to the results of othermetal films on GaAs.

在三种光波长(光子能量=21.2eV、40.8eV、1486.6eV)下,测量了GaAs(110)解理面上较广的膜厚范围(0.05—1000(?))Ag 膜的紫外光电子能谱和X 射线光电子能谱。分析了Ga3d 峰,As3d 峰、Ag3d 峰、d 带和价带结构随膜厚增加的变化,得到关于费米能级钉扎、半导体一金属界面处的混杂、金属薄膜的费米边和能带结构、d 带紫外光电子谱强度随膜厚增加出现的极大点等的结果,显示出银膜与其他金属膜的一些异同。

We have made the first observation of the enhancement of SHG signals produced by long-range surface plasmon waves (LRSPW) in a homogeneous dielectric-Ag film-homogeneous dielectric configuration.

运用光束传播方法推导了长程表面等离子激元波产生的二次谐波场强公式,并首次在银膜与各向同性的均匀介质的多层膜结构中观察到长程表面等离子激元波产生的二次谐波增强效应。理论分析与实验结果基本一致。

In this article, as-evaporated and annealed samples of Ge/Au, Ge/Ag bilayer films and Ge-Au, Ge-Ag alloy films were investigated by TEM. In situ observations of Ge/ polyerystalline Au (p-Au) and Ge/p-Ag films during heating were also made by TEM. It is found that crystallization temperature Tc of amorphous Ge (a-Ge) in a-Ge/p-Au is much lower than Tc of a-Ge/monocrystalline Au (m-Au). It is shown that the boundary triple points and other interface defects of p-Au films are...

In this article, as-evaporated and annealed samples of Ge/Au, Ge/Ag bilayer films and Ge-Au, Ge-Ag alloy films were investigated by TEM. In situ observations of Ge/ polyerystalline Au (p-Au) and Ge/p-Ag films during heating were also made by TEM. It is found that crystallization temperature Tc of amorphous Ge (a-Ge) in a-Ge/p-Au is much lower than Tc of a-Ge/monocrystalline Au (m-Au). It is shown that the boundary triple points and other interface defects of p-Au films are the favourable nucleating positions for a-Ge crystallization in bilayer films. Tc of a-Ge in the condensation regions of Ge/p-Au films (≈100℃) is lower than Tc (≈150℃) in the noncondensa-tion regions. There are some large Ge grains in the condensation regions because of the effect of favourable crystallization in local regions. Tc of a-Ge in a-Ge/p-Ag and a-Ge/ m-Ag films is about 280℃. Tc of alloy films is higher than that of correlative bilayer films when metallic content in alloy film is low (CAu < 17at%, CAg < 18at%). Tc of alloy films is lower than that of bilayer films when metallic content is relatively high. It is because of smpersaturation metallic atoms which reduce the crystallization potential barrier of a-Ge significantly.

本文对Ge/An,Ge/Ag,双层膜和Ge-An,Ge-Ag合金膜的退火过程进行了透射电子显微镜观测,对Ge/多晶Au(或Ag)还进行了加热过程的原位观测。观测表明,多晶Au和单晶Au膜的存在使非晶Ge的晶化温度T_c的下降显著不同,可由晶界三叉点等处为非晶Ge的有利形核位置来解释,双层膜的缩聚区中由于局域优先晶化的影响,不仅T_c(=100℃)比非缩聚区中(T_c=150℃)低,而且形成直径为1—2μm的Ge大晶粒,而Ge/多晶Ag和Ge/单晶Ag膜的T_c均约为280~C,合金膜中金属含量较低时(C_(Au)<17at%,C_(Ag)<18at%),T_c高于相应的Ge/多晶Au(Ag)膜;金属含量较高时,T_c低于Ge/多晶Au(Ag)膜。这说明过饱和金属原子的存在使得非晶Ge的晶化势垒大大降低。

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关ag film的内容
在知识搜索中查有关ag film的内容
在数字搜索中查有关ag film的内容
在概念知识元中查有关ag film的内容
在学术趋势中查有关ag film的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社