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semiconductor film
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  “semiconductor film”译为未确定词的双语例句
     The regression analysis of 1n(iph), (U-Ufb )1/2 for an amorphous semiconductor film on iron surface indicated that NaNO2 affected the anodic behavior of armco-iron by changing the ionization energy of the localization state of amorphous semiconductor film.
     根据1n(iph)与(U-Ufb)1/2的回归分析发现,阳极表面都为无定形膜,NaNO2是通过改变阳极表面膜定域态的电离能来影响工业纯铁阳极行为的。
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     Electrochemical Preparation and Properties of CuI Semiconductor Film
     CuI半导体膜的电化学制备与性质
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     We produced a kind of porous structure on semiconductor film using laser with 75W power and 1064nm wavelength,and the porous structure can emit intense photoluminescence(PL).
     将功率为75W、波长为1064nm的YAG激光束照射在单晶硅样品上,形成的孔状结构有很特殊的表面形貌。 特别是在孔内的侧壁上,有很特殊的网孔形结构,这里有很强的受激荧光发光效应,光致荧光谱峰在710nm处。
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     We found that the electron emission rate can be up to 0.3% under appropriate conditions, including lowering the work function of the top electrode film, controlling its thickness and the growth conditions of the semiconductor film.
     通过电子束蒸发具有低功函数的上电极材料,适当控制其厚度,并且控制半导体层合适的厚度和成膜条件可以提高器件的电子发射率至0.3%。
     Assembly and Characterization of Nanoscale Conducting Polymer and Semiconductor film
     纳米结构导电聚合物和半导体膜的组装和表征
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     The film was of n-type semiconductor.
     其钝化膜为n-型半导体。
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     Analysis of Semiconductor Film with RHEED
     用RHEED方法分析半导体薄膜特性
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     Symbol in the Film
     电影中的象征问题
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     Semiconductor Arrester
     半导体放电管
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     Palestinian Film
     巴勒斯坦电影
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  semiconductor film
Two-dimensional equations for a thin film are used to model the semiconductor film and the air gap.
      
We study wave propagation in a piezoelectric ceramic half-space with a thin semiconductor film and an air gap between the film and the half-space.
      
Propagation and amplification of gap waves between a piezoelectric half-space and a semiconductor film
      
A new CVD reactor for semiconductor film deposition
      
The semiconductor film exhibits an electronic instability that limits its use, at present, to transient measurements with frequencies above 1 Hz.
      
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In this paper we provide a new method for the determination of thickness of ultra-thin metal or semiconductor films (thinner than 15 nm) evaporated on Si substrate which is based on the measurement of Intensity of backscattering electrons with an primary electron energy of 18keV. A high resolution of 0.03 nm for Au films is obtained. Using the focused electron beam of Scanning Electron Microscope, a high lateral resolution of the order of Iμm is achieved.

本文提出一种测定硅片上蒸发金属或半导体超薄薄膜厚度(小于15nm)的新方法。该方法基于测量薄膜的电子背向散射强度,所用的入射电子能量为18keV。对金薄膜,实验得到的膜厚分辨率为0.03nm。由于利用了扫描电子显微镜中的聚焦电子束,该法具有很高的横向分辨率,数量级为1 μm。

For poly-crystalline semiconductor film deposited on an insulator and then recrystallized by a laser beam, the influence of the substrate upon recrystallization of the film was analyzed theoretically. We found the critical laser power necessary for solid-liquid phase transition to take place, will change to a lower value as the poor thermal conduction of insulating substrate being reasonably considered. It is well known that the existence of stress in recrystallized films may be taken as a...

For poly-crystalline semiconductor film deposited on an insulator and then recrystallized by a laser beam, the influence of the substrate upon recrystallization of the film was analyzed theoretically. We found the critical laser power necessary for solid-liquid phase transition to take place, will change to a lower value as the poor thermal conduction of insulating substrate being reasonably considered. It is well known that the existence of stress in recrystallized films may be taken as a criterion for melting process that undergoes during laser irradiation. A large number of SOI samples prepared by LPCVD technology were studied after its laser recrystallization, to obtain the critical transition conditions through strass determination by use of Raman peak shifts. A comparison of the calculations based on the model taking low thermal conductance of the substrate into account with the experimental results showed its fitting is better than that with the influence of substrate being neglected.

从理论的角度分析了绝缘衬底对其上面半导体多晶膜激光熔化再结晶过程的影响,发现低导热的绝缘层使产生固-液相变的临界激光功率有明显的降低。用喇曼光谱测量了激光再结晶SOI层中的应力。应力的出现是多晶膜内曾经发生过固-液相变的佐证。从这一思想出发,对LPCVD方法制备的大量SOI样品进行激光再结晶临界条件的研究,证明了忽略绝缘层低热导影响的模型不能解释实验结果,而经过修正的公式则可以较好地拟合实验结果。

The growth of Ag ultramicro-particles in BaO semiconductor film are investigated bv tran missive electron microscope. The fine growth of Ag ultramicro-particles in BaO film are discovered in the samples after proper heat treatment. We also contrasted the structure difference of single-layer-made and multilayer-made Ag + BaO films. The growth properties of Ag ultramicro-particles in Ag + BaO films with different Ag content are also studied. The Ag ultramicro-particles do not form maze...

The growth of Ag ultramicro-particles in BaO semiconductor film are investigated bv tran missive electron microscope. The fine growth of Ag ultramicro-particles in BaO film are discovered in the samples after proper heat treatment. We also contrasted the structure difference of single-layer-made and multilayer-made Ag + BaO films. The growth properties of Ag ultramicro-particles in Ag + BaO films with different Ag content are also studied. The Ag ultramicro-particles do not form maze structure in Ag + BaO film with high Ag content, but form isolated Ag particles. There are BaO layer of a few nm thick between every two Ag particles.

本文在透射电子显微镜上观察了金属银超微粒子在半导体氧化钡薄膜中的生长。实验发现,当经过一定的热处理后,金属银在氧化钡中能形成很好的超微粒子。我们还比较了单层制备和多层制备得到的Ag+BaO薄膜的结构差别。同时,考查了含银量不同的Ag+BaO薄膜银超微粒子的生长特点,发现当银量较大时,在Ag+BaO薄膜中,Ag超微粒子并不彼此连接起来形成金属迷津通道,而仍形成孤立的大微粒,微粒之间隔有几个nm的BaO层。

 
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