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   semiconductor film 在 物理学 分类中 的翻译结果: 查询用时:0.073秒
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  半导体薄膜
    Monte Carlo Simulation of Epitaxial Growth on Semiconductor Film Material
    半导体薄膜材料外延生长的蒙特卡罗模拟
短句来源
    The Determinations of Optical Parameters of Semiconductor Film
    半导体薄膜光学参数的分析与测定
短句来源
    oxide medium film? semiconductor film? metal compound film and etc can be made by the technique which had an extensive application in research and production.
    原则上应用这种方法可以广泛制备诸如氧化物铁电薄膜、氧化物介质薄膜、半导体薄膜、金属化合物薄膜等各类薄膜,广泛应用于科研和生产中.
短句来源
    Plasmas are widely used in the preparation of semiconductor film materials andmicroelectronic industry.
    等离子体在微电子工业及半导体薄膜材料生长等方面有着广泛的应用。
短句来源
    In the paper, the newest methods for syntyesing diamend film, Cubic BN film,superconductor film and semiconductor film at home and abroad are introduced.
    本文主要介绍国内外激光技术在合成金刚石薄膜、立方氮化硼薄膜、超导薄膜、半导体薄膜等的最新方法.
短句来源
更多       
  半导体薄膜
    Monte Carlo Simulation of Epitaxial Growth on Semiconductor Film Material
    半导体薄膜材料外延生长的蒙特卡罗模拟
短句来源
    The Determinations of Optical Parameters of Semiconductor Film
    半导体薄膜光学参数的分析与测定
短句来源
    oxide medium film? semiconductor film? metal compound film and etc can be made by the technique which had an extensive application in research and production.
    原则上应用这种方法可以广泛制备诸如氧化物铁电薄膜、氧化物介质薄膜、半导体薄膜、金属化合物薄膜等各类薄膜,广泛应用于科研和生产中.
短句来源
    Plasmas are widely used in the preparation of semiconductor film materials andmicroelectronic industry.
    等离子体在微电子工业及半导体薄膜材料生长等方面有着广泛的应用。
短句来源
    In the paper, the newest methods for syntyesing diamend film, Cubic BN film,superconductor film and semiconductor film at home and abroad are introduced.
    本文主要介绍国内外激光技术在合成金刚石薄膜、立方氮化硼薄膜、超导薄膜、半导体薄膜等的最新方法.
短句来源
更多       
  半导体膜
    THE PREPARATION AND MICROSTRUCTURE STUDY OF NANO METAL SEMICONDUCTOR FILM Cu∶CdS
    金属颗粒-半导体膜Cu:CdS的制备及结构研究
短句来源
    Applicating Pico Plus atomic force microscope to study imaging the samples of CdZnO thin film, Ge_2Sb_2Te_5 optics memory film,semiconductor film, siller thin film and DLC thin film. Observing their surface configuration, mensurate their surface roughness and analysis their aperture and growth grain size,that can provide scientific gist to estimate quality of membrane and instruct membrane preparation.
    应用Pico Plus原子力显微镜对CdZnO薄膜、光学存储膜(Ge_2Sb_2Te_5)、半导体膜、银胶薄膜和DLC类金刚石薄膜5种膜样品进行成象研究,观察了其表面形态结构,测定了表面粗糙度,并测量了孔径和生长颗粒大小,为判断膜生长质量和指导膜制备提供了科学依据。
短句来源
    By using magnetic controlled sputtering of atoms and evaporating insulator medium, Cu clusters embedded in CdS, a metal semiconductor film Cu∶CdS has been successfully prepared. TEM is used in studying the microstructure of Cu clusters embedded in the medium CdS. The copper cluster is well embedded in CdS.
    利用磁控溅射产生金属Cu团簇,同时蒸发半导体介质CdS,将Cu团簇包埋在CdS介质中,制备出金属颗粒半导体膜.团簇大小可通过改变溅射气压控制.用TEM研究了嵌埋团簇的结构.分析表明:CdS很好地包埋了Cu团簇,都呈多晶结构;
短句来源
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  semiconductor film
Two-dimensional equations for a thin film are used to model the semiconductor film and the air gap.
      
We study wave propagation in a piezoelectric ceramic half-space with a thin semiconductor film and an air gap between the film and the half-space.
      
Propagation and amplification of gap waves between a piezoelectric half-space and a semiconductor film
      
A new CVD reactor for semiconductor film deposition
      
The semiconductor film exhibits an electronic instability that limits its use, at present, to transient measurements with frequencies above 1 Hz.
      
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For poly-crystalline semiconductor film deposited on an insulator and then recrystallized by a laser beam, the influence of the substrate upon recrystallization of the film was analyzed theoretically. We found the critical laser power necessary for solid-liquid phase transition to take place, will change to a lower value as the poor thermal conduction of insulating substrate being reasonably considered. It is well known that the existence of stress in recrystallized films may be taken as a...

For poly-crystalline semiconductor film deposited on an insulator and then recrystallized by a laser beam, the influence of the substrate upon recrystallization of the film was analyzed theoretically. We found the critical laser power necessary for solid-liquid phase transition to take place, will change to a lower value as the poor thermal conduction of insulating substrate being reasonably considered. It is well known that the existence of stress in recrystallized films may be taken as a criterion for melting process that undergoes during laser irradiation. A large number of SOI samples prepared by LPCVD technology were studied after its laser recrystallization, to obtain the critical transition conditions through strass determination by use of Raman peak shifts. A comparison of the calculations based on the model taking low thermal conductance of the substrate into account with the experimental results showed its fitting is better than that with the influence of substrate being neglected.

从理论的角度分析了绝缘衬底对其上面半导体多晶膜激光熔化再结晶过程的影响,发现低导热的绝缘层使产生固-液相变的临界激光功率有明显的降低。用喇曼光谱测量了激光再结晶SOI层中的应力。应力的出现是多晶膜内曾经发生过固-液相变的佐证。从这一思想出发,对LPCVD方法制备的大量SOI样品进行激光再结晶临界条件的研究,证明了忽略绝缘层低热导影响的模型不能解释实验结果,而经过修正的公式则可以较好地拟合实验结果。

In the paper, the newest methods for syntyesing diamend film, Cubic BN film,superconductor film and semiconductor film at home and abroad are introduced.

本文主要介绍国内外激光技术在合成金刚石薄膜、立方氮化硼薄膜、超导薄膜、半导体薄膜等的最新方法.

The design and arrangement of an in-line analysis system of slow positron beam for molecular beam epitaxy is described and the analysis method using positron beam technique to study semiconductor films is introduced. In the slow positron moderator, a combination of tungsten-rings and "Venetian blind" structure are used to obtain a higher efficiency of conversion from fast to slow positrons.

本文系统地介绍用于分子束外延的慢正电子束在线分析系统的设计与研制,提出用慢正电子束技术在线研究半导体薄膜的分析方法,在正电子慢化器中采用多钨环加百叶窗组合结构,得到较高的快-慢正电子转换效率。

 
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