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  半导体薄膜
    Monte Carlo Simulation of Epitaxial Growth on Semiconductor Film Material
    半导体薄膜材料外延生长的蒙特卡罗模拟
短句来源
    oxide medium film? semiconductor film? metal compound film and etc can be made by the technique which had an extensive application in research and production.
    原则上应用这种方法可以广泛制备诸如氧化物铁电薄膜、氧化物介质薄膜、半导体薄膜、金属化合物薄膜等各类薄膜,广泛应用于科研和生产中.
短句来源
    The technology of plasma has been applied in the preparation of semiconductor film materials and microelectronic industry.
    等离了体技术在微电子工业和半导体薄膜材料生长等方面有着广泛的应用。
短句来源
  半导体薄膜
    Monte Carlo Simulation of Epitaxial Growth on Semiconductor Film Material
    半导体薄膜材料外延生长的蒙特卡罗模拟
短句来源
    oxide medium film? semiconductor film? metal compound film and etc can be made by the technique which had an extensive application in research and production.
    原则上应用这种方法可以广泛制备诸如氧化物铁电薄膜、氧化物介质薄膜、半导体薄膜、金属化合物薄膜等各类薄膜,广泛应用于科研和生产中.
短句来源
    The technology of plasma has been applied in the preparation of semiconductor film materials and microelectronic industry.
    等离了体技术在微电子工业和半导体薄膜材料生长等方面有着广泛的应用。
短句来源
  半导体膜
    Applicating Pico Plus atomic force microscope to study imaging the samples of CdZnO thin film, Ge_2Sb_2Te_5 optics memory film,semiconductor film, siller thin film and DLC thin film. Observing their surface configuration, mensurate their surface roughness and analysis their aperture and growth grain size,that can provide scientific gist to estimate quality of membrane and instruct membrane preparation.
    应用Pico Plus原子力显微镜对CdZnO薄膜、光学存储膜(Ge_2Sb_2Te_5)、半导体膜、银胶薄膜和DLC类金刚石薄膜5种膜样品进行成象研究,观察了其表面形态结构,测定了表面粗糙度,并测量了孔径和生长颗粒大小,为判断膜生长质量和指导膜制备提供了科学依据。
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  semiconductor film
Two-dimensional equations for a thin film are used to model the semiconductor film and the air gap.
      
We study wave propagation in a piezoelectric ceramic half-space with a thin semiconductor film and an air gap between the film and the half-space.
      
Propagation and amplification of gap waves between a piezoelectric half-space and a semiconductor film
      
A new CVD reactor for semiconductor film deposition
      
The semiconductor film exhibits an electronic instability that limits its use, at present, to transient measurements with frequencies above 1 Hz.
      
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The changes of properties and structure in GeS2 amorphous semiconductor films by light illumination from Ar ion laser were studied with the XRD, IR, SEM and transmission spectra analysises. Photoinduced crystallization was also observed in the exposed films. The results show that the optical absorption edges of the films shift to shorter wavelength according to annealing and light illumination. The magnitude of shift increases with the increase of the intensity of illumination light and the...

The changes of properties and structure in GeS2 amorphous semiconductor films by light illumination from Ar ion laser were studied with the XRD, IR, SEM and transmission spectra analysises. Photoinduced crystallization was also observed in the exposed films. The results show that the optical absorption edges of the films shift to shorter wavelength according to annealing and light illumination. The magnitude of shift increases with the increase of the intensity of illumination light and the illumination time, and the shift in annealed films is reversible.

采用514.5石nm波长的氩离子激光器,结合X射线衍射分析(XRD)、红外光谱分析(IR)、扫描电镜分析(SEM)和透射光谱分析,研究了GeS2非晶半导体薄膜在激光辐照后的性能及结构变化.实验结果发现,经热处理和激光辐照后,薄膜的光学吸收边均移向短波长处,并且随着辐照激光强度和辐照时间的增加而增加,这种平移在退火薄膜中是可逆的.SEM结果分析表明,薄膜在激光辐照后有晶相出现,且随着辐照激光强度的增加,晶相更多.

We report on the preparation of superconducting film using chemical solution deposition method.Different kind of films such as oxide ferroelectric film?oxide medium film?semiconductor film?metal compound film and etc can be made by the technique which had an extensive application in research and production.It is an excellent method due to the lower cost?simple processing?shorter period and phase tormation at relatively lower temperature.Here we give a discussion about this method in terms of theory...

We report on the preparation of superconducting film using chemical solution deposition method.Different kind of films such as oxide ferroelectric film?oxide medium film?semiconductor film?metal compound film and etc can be made by the technique which had an extensive application in research and production.It is an excellent method due to the lower cost?simple processing?shorter period and phase tormation at relatively lower temperature.Here we give a discussion about this method in terms of theory and practice.

本文介绍应用化学溶液沉积法制备超导薄膜的方法.原则上应用这种方法可以广泛制备诸如氧化物铁电薄膜、氧化物介质薄膜、半导体薄膜、金属化合物薄膜等各类薄膜,广泛应用于科研和生产中.其方法成本低廉、工艺简单、制备周期短、且可在较低温度下成相,是一种制备薄膜的好方法.这里从理论与实践的结合上给以论述.

The intense visible photoluminescence (PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology. The effect was attributed to a quantum confinement of carriers in structures only a few nm in size, resulting in an effective increase of the apparent band-gap with respect to bulk Si. Recent years, it had been widely reported about Si and Ge nano particles embedded in SiO_2 and Si_3N_4 films, some interesting phenomenon were...

The intense visible photoluminescence (PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology. The effect was attributed to a quantum confinement of carriers in structures only a few nm in size, resulting in an effective increase of the apparent band-gap with respect to bulk Si. Recent years, it had been widely reported about Si and Ge nano particles embedded in SiO_2 and Si_3N_4 films, some interesting phenomenon were also reported. Since the successful synthesis of amorphous semiconductor multiple films used plasma enhanced chemical vapour deposition (PECVD) by Exxon Corporation, the technology which need little complex epitaxy has attracted much attention, as we all known, the multiple films has a strong quantum effect, and also some interface effect would be magnified compared to the single layer films, it brings some novel phenomenon. The low temperature or room temperature photoluminescence had been widely reported, and they mostly concerned about the quantum effect and interface structure, but the photoluminescence dynamics of the multiple semiconductor films had not been reported. In this paper, we have performed multiple a-SiC_x∶H/a-Si∶H films successfully by PECVD. Microstructure and time-resolved PL spectra of the samples were studied. The results showed that a significant photoluminescence peak at about 650 nm was observed, and the peak position varies with annealing temperature. A maximum intensity of PL peak and a minimum decay time (t_1) were obtained for the sample annealed at 900 ℃. The origin of luminescence was suggested and discussed.

在等离子体增强化学气相沉积(PECVD)系统中,通过控制进入反应室的气体种类逐层沉积非晶SiCx∶H(a SiCx∶H)和非晶Si∶H(a Si∶H)薄膜,然后经过高温热退火处理,成功制备了晶化纳米a SiCx∶H/nc Si∶H(多晶SiC和纳米Si)多层薄膜。利用截面透射电子显微镜技术分析了a SiCx∶H/nc Si∶H多层薄膜的结构特性。通过对晶化样品的时间分辨光致发光谱的研究,结果表明:随着退火温度的升高,发光峰位置开始出现一些红移现象;当退火温度为900℃时,样品的发光强度和发光衰减时间分别达到最大值和最小值;随着退火温度的继续升高,发光峰位置又开始出现蓝移现象。由此探讨纳米a SiCx∶H/nc Si∶H多层薄膜的发光特性和发光机理。

 
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