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semiconductor film
相关语句
  半导体薄膜
    Design and Application of Real-time Monitoring System of Semiconductor Film Growth
    半导体薄膜生长实时监控系统的设计与应用
短句来源
    The process characteristics of growth of semiconductor film are analyzed.
    文章分析了半导体薄膜生长工艺流程的特点。
短句来源
    Then,a set of real-time monitoring system of semiconductor film growth is designed for the ECR-MOCVD in our lab. The hardware and the realization of system software for real time monitor with VB6.0 based on WIN 98 are introduced.
    在此基础上 ,为实验室的ECR -MOCVD设备设计了一套半导体薄膜生长的实时监控系统 ,介绍了系统的硬件结构以及在WIN98环境下用VB6 0实现生长实时监控系统软件的实现方法。
短句来源
  半导体薄膜
    Design and Application of Real-time Monitoring System of Semiconductor Film Growth
    半导体薄膜生长实时监控系统的设计与应用
短句来源
    The process characteristics of growth of semiconductor film are analyzed.
    文章分析了半导体薄膜生长工艺流程的特点。
短句来源
    Then,a set of real-time monitoring system of semiconductor film growth is designed for the ECR-MOCVD in our lab. The hardware and the realization of system software for real time monitor with VB6.0 based on WIN 98 are introduced.
    在此基础上 ,为实验室的ECR -MOCVD设备设计了一套半导体薄膜生长的实时监控系统 ,介绍了系统的硬件结构以及在WIN98环境下用VB6 0实现生长实时监控系统软件的实现方法。
短句来源
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  semiconductor film
Two-dimensional equations for a thin film are used to model the semiconductor film and the air gap.
      
We study wave propagation in a piezoelectric ceramic half-space with a thin semiconductor film and an air gap between the film and the half-space.
      
Propagation and amplification of gap waves between a piezoelectric half-space and a semiconductor film
      
A new CVD reactor for semiconductor film deposition
      
The semiconductor film exhibits an electronic instability that limits its use, at present, to transient measurements with frequencies above 1 Hz.
      
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The thin semiconductors films make used of force sensitive devices. Evaluate the piezoresistive properties of thin films with oneself is very important. But up to the present, measurement values is determined using the composite sample, that deposited film bind subetrate, because fellow for covering and measuring of film after covered.In this paper we will given fermet equivalent and new formula, by means of common method of measured ε, E etc before and the deposition make obtaining...

The thin semiconductors films make used of force sensitive devices. Evaluate the piezoresistive properties of thin films with oneself is very important. But up to the present, measurement values is determined using the composite sample, that deposited film bind subetrate, because fellow for covering and measuring of film after covered.In this paper we will given fermet equivalent and new formula, by means of common method of measured ε, E etc before and the deposition make obtaining piezoresistive propertic of film with oneself, contains K, K, π,π.

半导体薄膜开始用于力敏器件,评价薄膜自身的压阻特性是十分重要的。但迄今报导的参数,通常是薄膜与基片粘附成一体的复合样品测量值,原因在于膜薄难剥,剥离之后测量也不易。建立等效模型,提出新的计算式,以便在基片淀积膜之前和之后,只作常规ε、E等测量,通过计算就可得到纯薄膜的压阻特性各参数,包括K、K、π、π。

The metal oxide semiconductor films have been used as sensing medium in the opto chemical sensor based on surface plasmon resonance. The influence of the optical parameters of Ag and sensing films on the sensor sensitivity is analyzed. By optimizing the optical parameters of intermediate layers between the metal films and the sensing films, the sensitivity can be increased further. Experimentally, SnO 2 and SiO 2 films were selected as sensing and intermediate layers and the...

The metal oxide semiconductor films have been used as sensing medium in the opto chemical sensor based on surface plasmon resonance. The influence of the optical parameters of Ag and sensing films on the sensor sensitivity is analyzed. By optimizing the optical parameters of intermediate layers between the metal films and the sensing films, the sensitivity can be increased further. Experimentally, SnO 2 and SiO 2 films were selected as sensing and intermediate layers and the gas sensing tests to NH 3、C 2H 5OH and C 3H 8 were made. The results indicate the sensor with optimized structure has a higher sensitivity.

采用溶胶 凝胶金属氧化物半导体薄膜 ,作为表面等离子体激元共振效应的光化学传感器的传感介质。分析了金属Ag膜与传感薄膜的光学参数对传感器灵敏度的影响。通过在金属层与传感层之间优化设计中间层 ,进一步提高了传感器灵敏度。选择SnO2 薄膜及SiO2 薄膜作为传感层与中间层 ,对三种气体NH3、C2 H5 OH、C3H8进行气敏实验 ,结果表明结构优化的传感器具有更高的灵敏度。

The process characteristics of growth of semiconductor film are analyzed. Then,a set of real-time monitoring system of semiconductor film growth is designed for the ECR-MOCVD in our lab.The hardware and the realization of system software for real time monitor with VB6.0 based on WIN 98 are introduced. The practical application shows that the growth process can run continuously and stably in this real-time monitoring system. Meanwhile, the accuracy of the experiment parameters and the reproducibility...

The process characteristics of growth of semiconductor film are analyzed. Then,a set of real-time monitoring system of semiconductor film growth is designed for the ECR-MOCVD in our lab.The hardware and the realization of system software for real time monitor with VB6.0 based on WIN 98 are introduced. The practical application shows that the growth process can run continuously and stably in this real-time monitoring system. Meanwhile, the accuracy of the experiment parameters and the reproducibility of the growth process are improved significantly.

文章分析了半导体薄膜生长工艺流程的特点。在此基础上 ,为实验室的ECR -MOCVD设备设计了一套半导体薄膜生长的实时监控系统 ,介绍了系统的硬件结构以及在WIN98环境下用VB6 0实现生长实时监控系统软件的实现方法。经实验证明 ,系统保证了工艺流程的连续可靠运行 ,实验数据的可靠性和工艺流程的可重复性也大大提高 ,使用方便 ,降低了试验人员的劳动强度 ,实现了预期的设计目标。

 
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