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reverse recovery
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  反向恢复
     Experimental results from the fabricated samples show a 50% decrease in the reverse recovery charge and a 60% increase in the softness factor of the body diode in 500V/2A VDMOSFETs.
     据此生产的样品的实验结果表明,对于500V/2A的VDMOSFET,反向恢复电荷减小了50%,体二极管的恢复因数增大了60%.
短句来源
     And reverse recovery charge is reduced 30%.
     反向恢复电荷减少30%。
短句来源
     Reverse recovery measurements show that competitors SJ MOSFET body diodes fail at a di/dt of just 100A/us where as SuperFETTMdevices are virtually indestructible, surviving >1000A/us.
     反向恢复测量表明,普通SJ器件的体二极管在di/dt仅为100A/μs的时候就会失效,而SuperFETTM器件几乎是不会破坏的,它在di/dt为1000A/μs时仍能工作。
短句来源
     And reverse recovery charge is reduced 40.8%.
     基于此思路,新结构VDMOSFET 反向恢复电荷减少40.8%。
短句来源
     The Modelling of P I N Power Diode with Reverse Recovery
     P-I-N型电力二极管反向恢复特性的仿真模型
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  “reverse recovery”译为未确定词的双语例句
     A New Design Methodology for Fast Reverse Recovery Body Diode in High-Voltage VDMOSFET
     高压VDMOSFET中的快恢复体二极管的设计新方法
短句来源
     Besides, the diode reverse recovery is also diminished with zero current switching (ZCS).
     变换器中的开关元件能够在全负载范围内实现软开关并且二极管实现零电流关断。
短句来源
     The lifetime of Si recovery diodes with Boron diffused p-n junction has been measured by the reverse recovery and step recovery methods.
     在此基础上提出了阶跃恢复法的测试条件,并认为这一方法测得的p-n结两极管寿命即少数载流子寿命。 然后,用阶跃恢复法测定了砷化镓p-n结两极管的少数载流子寿命。
短句来源
     A new definition of reverse recovery softness K of fast diodes is given,and the relationship of reverse over voltage to the softness K of the fast diode is derived and verified by experiment.
     给出了快速二极管软度K的新定义; 推导出快速二极管反向过电压与软度K的关系,经试验证实了软度K与反向过电压的对应关系。
短句来源
     Finally,the ratio of the platinum concentration of maximum damage region to the damage tail region is 1.5~2.With the comparison of the traditional platinum-diffusion lifetime control,this new technique demonstrates the good potential to fabricate power P-i-N diodes with the faster reverse recovery speed,the larger softness recovery factor and the lower leakage current.
     最终 ,质子辐照缺陷峰附近处的铂浓度将会是缺陷拖尾区中铂浓度的 1.5~ 2倍。 与传统扩铂技术相比 ,用此新技术制成的P i N功率二极管有可能实现更快的恢复速度、更大的软度恢复因子和更低的反向漏电。
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  相似匹配句对
     The recovery time of reverse reflection.
     反正反射恢复时间明显缩短(P<0.05);
短句来源
     The Modelling of P I N Power Diode with Reverse Recovery
     P-I-N型电力二极管反向恢复特性的仿真模型
短句来源
     Backup and Recovery
     备份和恢复软件
短句来源
     Recovery of "the Other"
     “他者”的复苏
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     Reverse engineering
     逆向工程设计
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  reverse recovery
Behavior of reverse recovery storage time (ts) as a function of initial ON-state forward current (IF) and OFF-state reverse current (IR) followed well-documented trends which have been observed for decades in silicon p+n rectifiers.
      
Minority carrier lifetimes in epitaxial 4H-SiC p+n junction diodes were measured via an analysis of reverse recovery switching characteristics.
      
Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysis
      
A fastpnn+ power diode is described, which due to a self-adaptingp emitter efficiency shows an essentially improved reverse recovery behaviour.
      
Improved reverse recovery of self-adaptingp emitter efficiency diodes (SPEED)
      
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This paper gives an approximate relation representing the plane junction diod with a base width smaller than the diffusion length, and shows, accordi ng to these relation, the possibility of determining the base width and the ef fective lifetime of the diode by means of the curve of the open-circuit juncti on voltage decay and the reverse recovery characteristics.

本文給出基区寬度小于扩散長度的面結型二极管底基区寬度与有效寿命的近似关釆式,並說明依据这些关系式利用二极管的反向恢复特性与断路結电压的衰减曲綫測量这种二极管的基区寬度与有效寿命的可能性.

This paper presents some preliminary results on the measurement of carrier lifetime of GaAs diodes by the step recovery method. The lifetime of Si recovery diodes with Boron diffused p-n junction has been measured by the reverse recovery and step recovery methods.

本文报告了我们用阶跃恢复法测定砷化镓两极管载流子寿命的初步结果。首先,对硅阶跃两极管用反向恢复法和阶跃恢复法两种方法测寿命,经比较结果,数据相当符合。在此基础上提出了阶跃恢复法的测试条件,并认为这一方法测得的p-n结两极管寿命即少数载流子寿命。然后,用阶跃恢复法测定了砷化镓p-n结两极管的少数载流子寿命。我们也测定了砷化镓M-S结两极管的寿命,经过分析,认为它不是少数载流子寿命。

The experiments were done using p9+u junction irradiated with 12MeV electron. Pour electron traps were observed in Si layers: A-center E1(Ec -0.19 eV), the divaeancy E2 (Ec -0.24 eV), and E4 (Ec -0.44 eV), and E3 defect level (Ec- 0.37eV). Using DLTS method in conjuntion with the reverse recovery technique, annealing behavior of E1, E4 and E3 traps have been studied. The annealing temperature of the E3 defect is the highest (≈520℃). We get an activation energy for thermal annealing of 1.71 eV with a frequency...

The experiments were done using p9+u junction irradiated with 12MeV electron. Pour electron traps were observed in Si layers: A-center E1(Ec -0.19 eV), the divaeancy E2 (Ec -0.24 eV), and E4 (Ec -0.44 eV), and E3 defect level (Ec- 0.37eV). Using DLTS method in conjuntion with the reverse recovery technique, annealing behavior of E1, E4 and E3 traps have been studied. The annealing temperature of the E3 defect is the highest (≈520℃). We get an activation energy for thermal annealing of 1.71 eV with a frequency factor of ~1.5×109s-1. The E3 and E4 defect levels are the principal recombination center that controls lifetime of minorities following irradiation. As the E2 and E4 defect level annealout, however, defect level E3 becomes the dominant recombination center.

用12MeV电子辐照硅p~+n结,在硅中除引入氧空位E_1(E_c- 0.19eV),双空位 E_2(E_c-0.24eV)和E_4(E_c-0.44eV)外,还引入缺陷E_3(E_c-0.37eV)。用DLTS方法和反向恢复时间测量研究了这些能级的退火行为,可以看到,E_3的退火温度最高(≈520℃)。由退火特性得出E_3的激活能为1.7eV,频率因子k_0为5.1×1O~9(1/s)。辐照后的硅少子寿命主要由E_4和E_3共同控制,在E_2,E_4退火基本消失后,E_3缺陷将为主要的复合中心。

 
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