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modulation frequency response
相关语句
  调制频响
     The characters of this improved circuit are not only low phase noise and high stable carrier but also ideal AF modulation frequency response, excellent anti-vibration and temperature performance.
     该电路不仅具有低的相噪、高稳定的载波,还具有理想的音频调制频响、优良的抗震动性能和温度性能。
短句来源
  “modulation frequency response”译为未确定词的双语例句
     It is not necessary to fit the intensity modulation frequency response or the relative noise intensity response avoiding the affect of optical feedback.
     该方法仅利用阈值附近端口阻抗特性和阈值以上弛豫振荡频率特性来提取半导体激光器的模型参数 ,无需拟合激光器的强度调制 (IM)频率响应特性或者相对噪声强度特性 ,但是需要器件的有源区结构参数和对光限制因子 Γ的估算。
短句来源
  相似匹配句对
     Stereo Frequency Modulation
     立体声调频
短句来源
     Analysis of Frequency Modulation Ranging
     调频测距信号分析
短句来源
     FREQUENCY
     生死频率
短句来源
     The Challenge and Response
     挑战与回应——全球化背景下公共行政变革的生态学解析
短句来源
     evaluation and response;
     评价与反馈;
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  modulation frequency response
The discussion includes an analysis of the modulation frequency response of the temperature rise in the solid.
      


Due to the quantum size effect confing the electrons and holes to extremely thin regions in semiconductor quantum well structure,the energy depen- dence of the density of states for electrons and holes changes into two-dimensional staircase form,As a result,semiconductor quantum well lasers(QWLs)exhibit advantages of lower threshold current density,much narrower spectral linewidth, wider tuning range of the lasing wavelength and higher modulation frequency response compared to conventional semiconductor...

Due to the quantum size effect confing the electrons and holes to extremely thin regions in semiconductor quantum well structure,the energy depen- dence of the density of states for electrons and holes changes into two-dimensional staircase form,As a result,semiconductor quantum well lasers(QWLs)exhibit advantages of lower threshold current density,much narrower spectral linewidth, wider tuning range of the lasing wavelength and higher modulation frequency response compared to conventional semiconductor lasers.Moreover,the high power and visible wavelength from QWLs can be easily attained.The paper mainly introduces the excellent characteristics and recent advaces of QWLs based on description of the distribution of stircase-like density of states with in this structure.Finally,future trend in this field is forecasted.

由于半导体量子阱结构限制电子和空穴到极薄区域的量子尺寸效应,导致了它具有二维台阶状的态密度。因此,用这种结构制备的量子阱激光器(QWL)具有低的阈值电流密度,窄的谱线宽度,宽的波长调谐范围以及高的调制频率响应知易实现大功率、短波长可见光输出等优点。本文在描述了这种结构的台阶状态密度分布的基础上,主要介绍了 QWL 主要优异特性和最近的发展水平。最后对今后的发展方向作了预测。

Quantum well laser diodes are of high modulation frequency response.They can be used as light sources and be directly modulated for high bit rate optical communications.As in the case of conventional laser diodes,direct modulation of quantum well laser diodes brings about chirping,which effects the perfomance of optical transmission systems.In this paper,the chirping characteristics of quantum well laser diodes under small signal modulation are studied.Chirping amplitude and phase changes with...

Quantum well laser diodes are of high modulation frequency response.They can be used as light sources and be directly modulated for high bit rate optical communications.As in the case of conventional laser diodes,direct modulation of quantum well laser diodes brings about chirping,which effects the perfomance of optical transmission systems.In this paper,the chirping characteristics of quantum well laser diodes under small signal modulation are studied.Chirping amplitude and phase changes with the modulation frequency are present.Comparison of dispersion properties for optical pulse transmission in conventional single mode fibers is given for both cases with and without chirping noise.It is founded that chirping has relatively great effect on high order dispersion.

量子阱激光器具有良好的小信号调制频率响应 ,能作为高速光通信光源采用直接调制方式进行信号传输。与普通半导体激光器一样 ,直接调制将引起啁啾 ,从而影响光纤通信系统的性能。文中对小信号调制下单量子阱激光器的啁啾特性进行了研究和分析。得出了啁啾幅度和啁啾相位与调制频率的关系。对考虑与不考虑啁啾两种情况下 ,光脉冲在常规光纤中传输时的色散特性进行了模拟分析 ,发现了啁啾对系统的高阶色散有较大影响

A new method which directly extracts the model parameters for the high speed low threshold semiconductor laser is presented, where only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used. It is not necessary to fit the intensity modulation frequency response or the relative noise intensity response avoiding the affect of optical feedback. The study shows that when the optical confinement factor is given,...

A new method which directly extracts the model parameters for the high speed low threshold semiconductor laser is presented, where only the terminal impedance characteristics near the threshold and the relaxation oscillation frequency characteristics above the threshold are used. It is not necessary to fit the intensity modulation frequency response or the relative noise intensity response avoiding the affect of optical feedback. The study shows that when the optical confinement factor is given, the device model parameters are unique which are different from the results of the previous references.

针对高速低阈值半导体激光器提出一种模型参数的直接确定方法。该方法仅利用阈值附近端口阻抗特性和阈值以上弛豫振荡频率特性来提取半导体激光器的模型参数 ,无需拟合激光器的强度调制 (IM)频率响应特性或者相对噪声强度特性 ,但是需要器件的有源区结构参数和对光限制因子 Γ的估算。研究表明当光限制因子Γ确定时 ,器件模型参数是唯一的

 
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