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angle of emission
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  发射角
     The relation between the vertical angle of emission of microwave and the critical angle of emission of the atmosphere waveguide is presented,the relation between the variation of microwave vertical angle of emission and the half power angle of the antenna is also presented in detail.
     对天线的挂高,天线的口径,微波的垂直发射角与大气波导的发射临界角,以及微波垂直发射角的变化量与天线的半功率角之间的关系做了探讨。
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  “angle of emission”译为未确定词的双语例句
     The study of the transition region at the interface of Si-SiO2 by changing the angle of emission in XPS is reported in this paper.
     本文报道了用X射线光电子能谱的角度效应研究硅-二氧化硅界面过渡区的结果。
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  相似匹配句对
     angle.
     角。
短句来源
     Emission Time of Light Particles with Respect to Measurement Angle
     轻粒子发射时间随测量角的变化
短句来源
     ANGLE Program
     ANGLE程序
短句来源
     Effect of Spark Advanced Angle to Emission Characteristic of LPG Engine
     点火提前角对电喷LPG发动机排放特性的影响
短句来源
     Angle of Eighty
     80°
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  angle of emission
Taking into account the Λn interaction, a nonrelativistic graphical technique is used to calculate the differential cross section of the reaction γd → K+Λ n as a function of photon energy, K+-momentum, and angle of emission of the K+.
      
A pump beam with a divergence of four degrees simultaneously generates the entire visible spectrum (blue to red) separated by the angle of emission.
      
It is shown that the shape of the bremsstrahlung spectrum is only slightly-dependent on the angle of emission.
      
The behaviour of the high-energy cross-section for protonproton elastic scattering as a function of proton energy and angle of emission is discussed.
      
This coefficient is a function of the atomic number, of the production and absorption cross-section per single nucleon and of the angle of emission.
      
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The study of the transition region at the interface of Si-SiO2 by changing the angle of emission in XPS is reported in this paper. The sample are ultra-thin oxide film on the silicon(111) surface formed at low temperature (700 ℃), the thickness of which was less than 50 A. The variation of the chemical displacement (6) and the intensity ratio (Iox/I81) of the silicon 2p photoelectron peaks come from the oxide film and the single-crystal substrate with the angle of emission is contradictory with the...

The study of the transition region at the interface of Si-SiO2 by changing the angle of emission in XPS is reported in this paper. The sample are ultra-thin oxide film on the silicon(111) surface formed at low temperature (700 ℃), the thickness of which was less than 50 A. The variation of the chemical displacement (6) and the intensity ratio (Iox/I81) of the silicon 2p photoelectron peaks come from the oxide film and the single-crystal substrate with the angle of emission is contradictory with the prediction for an ideal interface model. The comparison of the experiment results with the prediction of the random-bonding model shows that there exists a transition region at the interface of Si-SiO2 and the width of which is about 20 A, less than the mean escape length of the Si2p photoelectron in SiO2. The same results are given by the experiment of Ar+ ion sputtering profiles.

本文报道了用X射线光电子能谱的角度效应研究硅-二氧化硅界面过渡区的结果。样品为(111)取向的硅单晶片上低温(700℃)氧化生成的超薄氧化膜,膜的厚度不大于50。氧化膜与单晶衬底中Si_(2p)光电子谱峰之间的化学位移(δ)和强度比(I_(0x)/I_(si))随光电子发射角(θ)的变化明显地偏离理想界面所预期的结果,表明在硅-二氧化硅的界面处存在化学比为SiO_x(0

A Simple description of the microwave atmosphere propagation fading statistics character of the strong reflection pathes over rigions of rivers and lakes or seas is given.In order to resist the K type interferential fading and the atmosphere wave guide fading,the most appropriate height and diameter of the antenna are discussed.The relation between the vertical angle of emission of microwave and the critical angle of emission of the atmosphere waveguide is presented,the relation...

A Simple description of the microwave atmosphere propagation fading statistics character of the strong reflection pathes over rigions of rivers and lakes or seas is given.In order to resist the K type interferential fading and the atmosphere wave guide fading,the most appropriate height and diameter of the antenna are discussed.The relation between the vertical angle of emission of microwave and the critical angle of emission of the atmosphere waveguide is presented,the relation between the variation of microwave vertical angle of emission and the half power angle of the antenna is also presented in detail.Finally,according to the CCIR′s requirement and distribution of the interruption rate of the big capacity digital microwave communication,detailed calculation methods are given to the key specification under the condition of different equalization and diversity equipments.

从陆上平原水网地带和跨海两种强反射电路的微波大气传播衰落统计特性中,可了解抵抗强反射地带存在的干涉型K型衰落和波导型衰落。对天线的挂高,天线的口径,微波的垂直发射角与大气波导的发射临界角,以及微波垂直发射角的变化量与天线的半功率角之间的关系做了探讨。根据CCIR对大容量数字微波通信系统中断率指标的要求,阐述了这一关键性指标在不同均衡和分集设备配置情况下的预测方法。

 
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