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graded junction
相关语句
  缓变结
     Solution for Breakdown Voltage for Asymmetric Linearly Graded Junction
     非对称线性缓变结击穿电压的解析计算
短句来源
     Numerical computation for DC characteristics of IMPATT devices with various structures: one-sided and two-Sided abrupt pn junctions, linearly graded junction,and "Gauss-flat" profile is presented. Computation is based on continuity equations for electrons and holes and poisson's equation. Many important parameters such as W, W_A, X_c, E_M, V_B etc.
     本文基于电子、空穴的连续性方程和泊松方程,对Si单边突变P~+n结、双边突变pn结、线性缓变结以及“高斯—平坦分布”复合结等不同掺杂结构下的IMPATT器件直流特性进行了数值计算,得到W、W_A、x_c、E_M、x_M、V_B等一系列表征管子特性的重要参量。
短句来源
     By using the definition of effective doping concentration gradient and depletion approximation,an analytical solution for avalanche breakdown voltage of double sided asymmetric linearly graded junction has been derived.
     通过有效掺杂浓度梯度的定义和耗尽近似求解 ,得到非对称线性缓变结击穿电压的简洁表达式。
短句来源
     The formula for calculating the effective impurity concentration in the abrupt junction, the linearly graded junction and the random junction is deduced by using the capacity characteristics obtained when the reverse bias are applied to the p-n junction.
     利用pn结反向偏压时的电容特性推导了有效杂质浓度随深度分布的计算公式及突变结和线性缓变结的1/(C2)-V和1/(C3)-V关系图。
短句来源
  “graded junction”译为未确定词的双语例句
     It is predicted that the expression for the break-down voltage of the field controlled lineary graded junction can also be derived bythe same method.
     预示,用同样的方法,也可以推导出场控缓变P-N结的击穿电压表达式.
短句来源
     Meanwhile,the analytical expression of the breakdown voltage of the single sided linearly graded junction has also been obtained.
     借助计算的有效掺杂浓度梯度和双边对称线性结击穿电压公式 ,可以方便地计算出非对称线性结的击穿电压。
短句来源
     This report describes an equivalent doping profile transformation method with which the avalanche breakdown voltage of the asymmetric linearly graded junction was analytically predicted.
     基于等价掺杂转换理论的应用 ,得到了解析计算非对称线性缓变 P- N结击穿特性 .
短句来源
     The analytical results agree with the experimental breakdown voltage in comparison with the abrupt junction and symmetric linearly graded junction approximations.
     本方法预言的最大击穿电压较之单纯的突变结和对称线性缓变 P- N结更接近文献报道的结果 ,显示了等价掺杂转换理论的理论计算非对称线性缓变 P- N结击穿电压的有效性
短句来源
  相似匹配句对
     Solution for Breakdown Voltage for Asymmetric Linearly Graded Junction
     非对称线性缓变结击穿电压的解析计算
短句来源
     On Graded V-rings
     关于分次V-环
短句来源
     Graded P -radical
     分次P-根(英文)
短句来源
     LIGHT AND THERMAL STABILITIES OF GRADED P-I HETERO JUNCTION IN a-Si:H SOLAR CELL
     非晶硅太阳电池中缓变P-I异质结的光、热稳定性的研究
短句来源
     Junction is a composite.
     Junction是一个意义的合成,只表达一个意义;
短句来源
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  graded junction
Fabrication of self-aligned graded junction termination extensions with applications to 4H-SiC P-N diodes
      
This model shows that the diffusion current of the graded junction diode is 2 orders of magnitude smaller than that of the abrupt junction diode, which clearly explains the R0A increase by the hydrogenation.
      
Abrupt junction devices stressed at an initial JE of 90 kA/cm2 at a VCE of 2V at 25°C degraded 20% within 70 h of operation, whereas, the graded junction devices show no degradation in dc characteristics after operation for over 500 h.
      
Graded junction devices had the base metal on top of graded InGaAsP layers, which the metal was diffused through, to make contact to the base region.
      


Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate...

Measurements of the voltage-current characteristics and space-charge capacitance have been made on the epitaxial p-n junctions grown by method of silicon carbidt crystals sublimation. An analysis of the forward voltage-current and voltage-capacitance charateristics shows that the structures of the p-n junction may vary over a quite wide range, from typical p-i-n junctions to nearly linear graded junctions resulted from different epitaxial growth parameters, but most of them have intermidiate structures. The effect of epitaxial growth parameters on structures of p-n junctions is briefly discussed.

本工作测量了升华外延碳化硅p-n结的电流-电压特性和空间电荷电容。通过对正向电流-电压特性及电容-电压特性的分析,表明:随着外延生长条件的不同,这种p-n结的结构可以在相当宽的范围内变化,从近于线性梯度结直到典型的p-i-n结,而大多数p-n结则介于这两者之间。文中就外延生长条件对p-n结结构的影响进行了简略的讨论。 此外,还给出了升华外延碳化硅p-n结正向电发光的亮度-电流关系、光谱分布以及脉冲和交流激励的测量结果。

The relationship between the breakdown voltage and the dielectric constant of thefield insulation layer (Ki),the thickness of the insulation layer (d),the field plate voltage(V_F),the flat band voltage (V_(FB)),the impumty concentration in the substrate (N_B),radius of curvature of the junction (r_j) is obtained through the analysis of the typicalstructure of the field controlled P-N junction.The experimental data are in goodagreement with the theoretical results.It is predicted that the expression for the break-down...

The relationship between the breakdown voltage and the dielectric constant of thefield insulation layer (Ki),the thickness of the insulation layer (d),the field plate voltage(V_F),the flat band voltage (V_(FB)),the impumty concentration in the substrate (N_B),radius of curvature of the junction (r_j) is obtained through the analysis of the typicalstructure of the field controlled P-N junction.The experimental data are in goodagreement with the theoretical results.It is predicted that the expression for the break-down voltage of the field controlled lineary graded junction can also be derived bythe same method.

本文通过对典型场控P-N结结构的分析,给出硅突变结击穿电压(BV_R)与覆盖在结上面的场绝缘层介质类型(K_i)、介质厚度(d)、场板偏压(V_F)、平带电压(V_(FB))、衬底杂质浓度(N_B)、结曲率半径(r_i)等参数之间的定量关系表达式.实验表明.实际测量的数据与用本文中公式所计算的结果符合得很好.预示,用同样的方法,也可以推导出场控缓变P-N结的击穿电压表达式.

Numerical computation for DC characteristics of IMPATT devices with various structures: one-sided and two-Sided abrupt pn junctions, linearly graded junction,and "Gauss-flat" profile is presented. Computation is based on continuity equations for electrons and holes and poisson's equation. Many important parameters such as W, W_A, X_c, E_M, V_B etc. have been calculated. The space-charge effect of carriers, unequal ionization retes and unequal saturated drift velocities of electrons and holes have been...

Numerical computation for DC characteristics of IMPATT devices with various structures: one-sided and two-Sided abrupt pn junctions, linearly graded junction,and "Gauss-flat" profile is presented. Computation is based on continuity equations for electrons and holes and poisson's equation. Many important parameters such as W, W_A, X_c, E_M, V_B etc. have been calculated. The space-charge effect of carriers, unequal ionization retes and unequal saturated drift velocities of electrons and holes have been taken into account in order to improve the practicality of the model.

本文基于电子、空穴的连续性方程和泊松方程,对Si单边突变P~+n结、双边突变pn结、线性缓变结以及“高斯—平坦分布”复合结等不同掺杂结构下的IMPATT器件直流特性进行了数值计算,得到W、W_A、x_c、E_M、x_M、V_B等一系列表征管子特性的重要参量。由于求解计入了载流子空间电荷效应,采用不等的电子、空穴离化率和饱和漂移速度,故更接近于实际情况。

 
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