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rapid zone
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     Anyang High-tech Development Zone in Rapid Development
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     sp. D Zone;
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     a. zone, E.
     C带,E.
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     A rapid
     本法简便、快速,结果准确.
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In this case, the instability of immunocomplexes limits the mode of separation to rapid zone separations.
      


Abstract Transmission electron microscope(TEM)analyses show that silicon film of heat-sink structure SOI(silicon on insulator) prepared by unseeded rapid zone-melt-recrystallisation(RZMR)process with a RF-induced graphite strip heater system,has its normal in (100)orientation.The process used in this strdy can effectively confine the defects in the predetermined Si strips lying on the thicker parts of the SiO2 layer,and makes the orther Si strips on the thinner perts of SiO2 layer defect-free in a width...

Abstract Transmission electron microscope(TEM)analyses show that silicon film of heat-sink structure SOI(silicon on insulator) prepared by unseeded rapid zone-melt-recrystallisation(RZMR)process with a RF-induced graphite strip heater system,has its normal in (100)orientation.The process used in this strdy can effectively confine the defects in the predetermined Si strips lying on the thicker parts of the SiO2 layer,and makes the orther Si strips on the thinner perts of SiO2 layer defect-free in a width of more than 50μm.The most commonly observed defects in the defect entrainment regions are sybgrain boundaries(SGBs).The angular discontinuity in the crystallographic orientation at SGB is in an extent less than three degrees.Both pure tilt and twist SGBs may exist in the RZMR Si film,but the most SGBs observed in the experiment are of the mixed type. The dislocations and dislocation networks in defect entrainment regions run in various directions,andthe Burgers vector of these dislocations is.

高频感应石墨条加热快速区熔再结晶工艺制备的无籽晶热沉积结构(Heat-SinkStruc-ture)SOI(SilicononInsulator)硅薄膜具有[100]取向,其缺陷被限制在厚SiO2层上的硅膜中,使薄的SiO2层上的硅膜成为无缺陷单晶区,宽度可达50μm以上,在缺陷聚集区观察到的缺陷主要是小角度晶界,绝大多数晶界的取向差都在3°之内.其类型多为混合型晶界,也观察到少量的扭转型和倾斜型晶界.缺陷聚集区中的位错或位错网络的走向是各种各样的,但其位错的柏氏矢量.

Crystallographic orientations and characters of various defects (subgrain boundaries, dislocations etc.) in Si film of heat sink structure SOI (silicon on insulator) prepared by unseeded rapid zone melting recrystallization (ZMR) process with a RF induced graphite strip heater system have been studied with a TEM. The study shows that the process used in this experiment can effectively confine the defects in the predetermined regions of Si film strips on the thicker parts of the SiO 2 layer, and makes...

Crystallographic orientations and characters of various defects (subgrain boundaries, dislocations etc.) in Si film of heat sink structure SOI (silicon on insulator) prepared by unseeded rapid zone melting recrystallization (ZMR) process with a RF induced graphite strip heater system have been studied with a TEM. The study shows that the process used in this experiment can effectively confine the defects in the predetermined regions of Si film strips on the thicker parts of the SiO 2 layer, and makes the other Si strips with a width of more than 50 μm defect free.

TEMSTUDYONLOCALIZEDRECRYSTALLIZATIONSOI①LiuAnsheng,ShaoBeiling,LiYonghong,LiuZhengGeneralResearchInstituteforNonferrousMetal...

 
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