助手标题  
全文文献 工具书 数字 学术定义 翻译助手 学术趋势 更多
查询帮助
意见反馈
   diffusion of impurities 的翻译结果: 查询用时:0.007秒
图标索引 在分类学科中查询
所有学科
更多类别查询

图标索引 历史查询
 

diffusion of impurities
相关语句
  “diffusion of impurities”译为未确定词的双语例句
     The carrier concentration profiles are different for the As2+ and As+ Implanted samples, which can be explained by the rapid diffusion of impurities resulting from the serious damage enhancement induced by As2+ implantation.
     As_2~+和As~+注入样品的载流子浓度的分布有所不同,这是由于As_2~+注入引入较大辐射损伤引起杂质的快速扩散所致.
短句来源
     The first process is the impuritiesdiffusion from the inside of the liquid antimony to the surface. The second is the impurities' evaporation on the liquid antimony surface. The third is the diffusion of impurities gas in the residual gas of vacuum furnace.
     其次进行动力学分析,动力学中影响低沸点易蒸发杂质从锑中蒸发的环节有四个:杂质从锑液中向锑液表面扩散、锑液表面杂质的蒸发、杂质气体在真空炉内残余气体中的扩散及杂质气体的冷凝,对于主体金属锑影响其蒸发的是上面后三个环节。
短句来源
     The electricfield gradient acting at the probe nuclei can serve as a fingerprint to elucidate different probe sites atthe surface,impurity-probe configurations and diffusion of impurities.
     通过测量作用在探核上的电场梯度,可辨认探针在表面的不同位置,研究杂质与探针相互作用及扩散过程.
短句来源
  相似匹配句对
     Diffusion mechanisms of impurities in GaAs
     GaAs中杂质扩散机制
短句来源
     Diffusion of Substitutional Metallic Impurities in Silicon with Getters
     代位金属原子在含吸杂源硅中的扩散(英文)
短句来源
     Study of Rates of Impurities Diffusion from Films on Sugar Crystals
     蔗糖晶体表面膜中杂质扩散速率的研究
短句来源
     MICROSCOPIC OBSERVATION OF DIFFUSION DISTRIBUTION OF IONIZED IMPURITIES IN SILICON
     硅中电离杂质扩散分布的显微观测
短句来源
     Impurities in Hexanitrohexaazaisowurtzitane
     关于六硝基六氮杂异伍兹烷产品杂质
查询“diffusion of impurities”译词为用户自定义的双语例句

    我想查看译文中含有:的双语例句
例句
为了更好的帮助您理解掌握查询词或其译词在地道英语中的实际用法,我们为您准备了出自英文原文的大量英语例句,供您参考。
  diffusion of impurities
Nonlinear diffusion of impurities in semiconductors
      
Three-dimensional (3D) simulation of combined lattice and grain-boundary diffusion of impurities in thin-film diffusion barriers for eemiconductor device metallizations is performed.
      
At constant temperature, nickel exhibited an improved creep resistance in combustion gas relative to that in argon, probably due to a hardening effect caused by the in-diffusion of impurities along creep dislocations.
      
At constant temperature, nickel exhibited an improved creep resistance in combustion gas relative to that in argon, probably due to a hardening effect caused by the in-diffusion of impurities along creep dislocations.
      
High-temperature creep of nickel under conditions of grain-boundary diffusion of impurities from the surface
      
更多          


In this paper the characteristics of the concentration of donor atoms in ionic crystal with colloidal particles are discussed. It is shown that the concentration of donor atoms is independent of the concentration of impurity. At the late period of growth of colloidal particles, the concentration of donor atoms can be approximately represented by the critical concentration of impurity. At that period the "equilibrium" between donor atoms and colloidal particles does not imply that the free energy...

In this paper the characteristics of the concentration of donor atoms in ionic crystal with colloidal particles are discussed. It is shown that the concentration of donor atoms is independent of the concentration of impurity. At the late period of growth of colloidal particles, the concentration of donor atoms can be approximately represented by the critical concentration of impurity. At that period the "equilibrium" between donor atoms and colloidal particles does not imply that the free energy of the system is located at its minimum point, and it implies that the free energy of the system decreases slowly. From the point of view of diffusion of impurity atoms the physical picture of the growth of colloidal particles is described, and the growth speed of colloidal particle is discussed.

本文在前文的基础上进一步讨论了固溶胶粒的生长和施主原子浓度等问题。本文先讨论施主原子浓度的特性,证明它与杂质浓度无关;在胶粒生长后期,施主原子浓度可以近似地用杂质临界浓度表示。施主原子与胶粒的“平衡”,并不意味着系统的自由能处于极小,而是继续缓慢下降,因而在“平衡”条件下测得的施主原子浓度具有一定的零散度。进而从原子扩散角度描述小胶粒缩小和大胶粒生长的物理图象,并讨论了粒子的线度生长速率;接着讨论胶粒有一定分布时的情况。 具体讨论了KCl,KBr,KI和NaCl的临界状态,及其有关参量E_β,β。再后就热凝聚和光凝聚等问题进行一些讨论。

As is well-known, the compensating impurities from the doped substrate enter into the epilayer in the form of auto-doping and out-diffusion during VPE, thus leading to the compensation of the epitaxial material. Recently, the study of doped GaAs behavious is gradually attracted from the compensation point of view. This paper describes a novel Back Liquid Encapsulation "BLE" technique to avoid the out-diffusion of impurities from the substrate and to prepare the GaAs epitaxial material with a low compensation...

As is well-known, the compensating impurities from the doped substrate enter into the epilayer in the form of auto-doping and out-diffusion during VPE, thus leading to the compensation of the epitaxial material. Recently, the study of doped GaAs behavious is gradually attracted from the compensation point of view. This paper describes a novel Back Liquid Encapsulation "BLE" technique to avoid the out-diffusion of impurities from the substrate and to prepare the GaAs epitaxial material with a low compensation ratio.

众所周知,在汽相外延过程中,来自掺Cr-GaAs单晶衬底的补偿杂质以自掺杂和外扩散的形式进入外延层,造成外延材料的补偿.随着FET器件的发展,近年来,从补偿度来研究材料特性渐渐受到重视.本文介绍了一种“背液封”技术,避免衬底杂质的外扩散,制备具有低补偿度的GaAs外延材料.

The radiation damage and annealing behavior of <100> Si implanted with 500 keV As_2~+ and 250 keV As+ have been investigated. Experimental results show that the damage created by As2+ implantation is greater than that created by As+ implantation. After rapid thermal annealing, the complete recovery from crystal damage, high substitution and electrical activation of implanted atoms can be obtained for both the As2+ and As+ implantations. The carrier concentration profiles are different for the As2+ and As+ Implanted...

The radiation damage and annealing behavior of <100> Si implanted with 500 keV As_2~+ and 250 keV As+ have been investigated. Experimental results show that the damage created by As2+ implantation is greater than that created by As+ implantation. After rapid thermal annealing, the complete recovery from crystal damage, high substitution and electrical activation of implanted atoms can be obtained for both the As2+ and As+ implantations. The carrier concentration profiles are different for the As2+ and As+ Implanted samples, which can be explained by the rapid diffusion of impurities resulting from the serious damage enhancement induced by As2+ implantation.

本文研究了500keV As_2~+和250keV As~+注入单晶硅引起的辐射损伤及其退火行为.结果表明,As_2~+注入比As~+注入在硅中引入更大的辐射损伤;经快速热退火后,两类注入样品均能消除损伤,获得高的杂质替位率和电激活率;As_2~+和As~+注入样品的载流子浓度的分布有所不同,这是由于As_2~+注入引入较大辐射损伤引起杂质的快速扩散所致.

 
<< 更多相关文摘    
图标索引 相关查询

 


 
CNKI小工具
在英文学术搜索中查有关diffusion of impurities的内容
在知识搜索中查有关diffusion of impurities的内容
在数字搜索中查有关diffusion of impurities的内容
在概念知识元中查有关diffusion of impurities的内容
在学术趋势中查有关diffusion of impurities的内容
 
 

CNKI主页设CNKI翻译助手为主页 | 收藏CNKI翻译助手 | 广告服务 | 英文学术搜索
版权图标  2008 CNKI-中国知网
京ICP证040431号 互联网出版许可证 新出网证(京)字008号
北京市公安局海淀分局 备案号:110 1081725
版权图标 2008中国知网(cnki) 中国学术期刊(光盘版)电子杂志社