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gain-guide
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  增益导引
     The optical characteristic of the index-guide, gain-guide laser diode array and the broad area laser diode is calculated using supermode theory and broad-area mode theory.
     本文通过超模理论和宽接触模式理论对折射率导引、增益导引半导体激光器列阵和宽接触条形半导体激光器输出激光的空间模式特性进行了研究。
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  “gain-guide”译为未确定词的双语例句
     Device is DHL structure of gain-guide and oxide-strripe.
     器件为双异质结增异导引氧化物条形结构。
短句来源
     Device is DHL structure of gain-guide and oxide-strripe。
     器件为双异质结增异导引氧化物条形结构。
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  相似匹配句对
     LOSS AND GAIN
     得与失
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     THE CODING GAIN OF MEMORIES
     存储器的编码增益
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     On-the-Fly Gain Control
     运行中可编程的增益控制
短句来源
     The Experiments of Gain-clamped SOA
     增益钳制半导体光放大器的实验研究
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     guide
     商情指南
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In seeking for semiconductor lasers with simple fabrication process and good performance, plenty of lager structures has been developed to realize the current confinement in lateral direction. As an effective way for this purpose, it was considered to form a current blocking layer inside the heterostructure and then allow the current to flow within a narrow path, as in the case of VSIS laser.In VSIS laser, two-Step epitaxial growth and photolithography and V-groovc etching on the epitaxial wafer are inevitable....

In seeking for semiconductor lasers with simple fabrication process and good performance, plenty of lager structures has been developed to realize the current confinement in lateral direction. As an effective way for this purpose, it was considered to form a current blocking layer inside the heterostructure and then allow the current to flow within a narrow path, as in the case of VSIS laser.In VSIS laser, two-Step epitaxial growth and photolithography and V-groovc etching on the epitaxial wafer are inevitable. Recently, we designed a laser with new structure, the terraced substrate inner stripe laser(TSIS).The TSIS laser has a simple fabrication process.It is fabricated by one-step liquid phase epitaxy without mask deposition and Zn diffusion. However, this TSIS laser needs a precise control of melt saturation and growth time of the current confinement layer. To make the laser fabrication process even simpler, a new structure laser with a narrow mesa substrate is developed (Fig.1).This new narrow mesa substrate inner stripe laser (NMSIS) is fabricated by simillar techniques to TSIS laser, using one-step liquid phase epitaxy without mask deposition and Zn diffusion. After a narrow trapezoidal mesa is etched on the substrate, making use of the properties of liquid phase epitaxy over a non-planar substrate, the growth of all layers including GaAlAs current confinement layer is accomplished by one-step liquid phase epitaxy.In growing the current confinement layer (first one), because the growth melt is effectively undersatu-rated for convex areas and the lateral diffusion is induced by local Solute concentration gradient between convex areas and concave ones, the shoulder of the mesa is melt-etched, the region on the mesa is just saturated, and at the same time the epitaxy layer is formed on the areas beyond the mesa part. By using this technique of crystal growth, the inner stripe for current channel is as narrow as 3 to 5um on the meSa.The confinement layer could be contiolled as thick as desirable. It's over 1μm in our experiment, which is enough to prevent the current leakage outside current channel.Apart from the very simple fabrication process of this structure, there are some other advantages. The spontaneous absorption in confinement layer instead of GaAs is reduced.Primarily, the lasers stimulate with threshold current of 80~120mA and the wavelength of 7800-8100A. Since the NMSIS laser is narrow gain guide, the laser has linear power veisus current characteristics and fundamental mode operation with up to 3-4 times threshold current and over 25mW maxium power output. The relation of field distribution to the current path width has been studied. The far field patterns in single, double and triple peaks in fundamental lateral mode are found in different cunent channel width.

研制了一种新型结构双异质结半导体激光器,这种激光器是利用非平面衬底液相外延的特点,使电流阻挡层和四层双异质结构在腐蚀成窄台的衬底上一次外延完成生长,内条形电流通路在外延生长中自然形成。工艺特别简单,且具有良好线性输出和稳定基横模式振荡等特点。

A novel high power LD-SLA of GaAlAs/GaAs maerial has been studied.Device is DHL structure of gain-guide and oxide-strripe.It uses direct coupling of the LD with the SLA.Output power has been amplified an order.High reflecting coatings and anti-reflective on the cavity surface of LD-SLA.The transmission coefficent and reflective coefficient have been changed respectively from 71% and 29%,in the case of without coatings,to above 90%.By this,the device cavity surface have been protected,the output power increased....

A novel high power LD-SLA of GaAlAs/GaAs maerial has been studied.Device is DHL structure of gain-guide and oxide-strripe.It uses direct coupling of the LD with the SLA.Output power has been amplified an order.High reflecting coatings and anti-reflective on the cavity surface of LD-SLA.The transmission coefficent and reflective coefficient have been changed respectively from 71% and 29%,in the case of without coatings,to above 90%.By this,the device cavity surface have been protected,the output power increased.

研究一种GaAlAs/GaAs材料的高功率半导体功率放大激光器(LD-SLA)。器件为双异质结增异导引氧化物条形结构。采用直接耦合方式将半导体激光器(LD)与半导体功率放大器(SLA)集成一体,使单管芯输出光功率提高一个数量级。并在器件端面镀高反射膜和增透膜,使器件端面的反射率和透射率由不镀膜时的29%、71%提高到90%以上,进一步提高激光输出。保护器件端面、提高器件使用寿命。

A novel high power LD – SLA of InGaAsP/InP matrial has been studied。 Device is DHL structure of gain-guide and oxide-strripe。It uses direct coupling of the LD with the SLA 。Output power has been amplified an order。High reflecting coatings and anti- reflective on the cavity surface of LD-SLA。The transmission coefficent and reflective coefficient have been changed respectively from 69% and 31% ,in the case without coatings ,to above 94% 。By this, the device cavity surface have been protected ,the output...

A novel high power LD – SLA of InGaAsP/InP matrial has been studied。 Device is DHL structure of gain-guide and oxide-strripe。It uses direct coupling of the LD with the SLA 。Output power has been amplified an order。High reflecting coatings and anti- reflective on the cavity surface of LD-SLA。The transmission coefficent and reflective coefficient have been changed respectively from 69% and 31% ,in the case without coatings ,to above 94% 。By this, the device cavity surface have been protected ,the output power increased。

研究一种InGaAsP/InP材料的高功率半导体功率放大器 (LD—SLA)及列阵。器件为双异质结增异导引氧化物条形结构。采用直接耦合方式将半导体激光器 (LD)与功率放大器(SLA)集成一体。输出功率提高一个数量级。并在器件端面镀高反射膜和增透膜 ,使反射率和透射率由无膜时的 31%、 6 9%提高到 94 %以上。提高激光输出 ,保护器件端面。

 
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